APT17N80BC3
APT17N80SC3
800V 17A
0.290Ω
Super Junction MOSFET
D3PAK
TO-247
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT17N80BC3_SC3
UNIT
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
17
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
VGSM
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
208
Watts
Linear Derating Factor
1.67
W/°C
VDSS
PD
TJ,TSTG
TL
dv/
dt
1
Operating and Storage Junction Temperature Range
Volts
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
300
Drain-Source Voltage slope (VDS = 640V, ID = 17A, TJ = 125°C)
50
V/ns
17
Amps
IAR
Repetitive Avalanche Current
7
EAR
Repetitive Avalanche Energy
7
EAS
Amps
51
Single Pulse Avalanche Energy
0.5
4
mJ
670
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IGSS
VGS(th)
(VGS = 10V, 11A)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
UNIT
Volts
0.25
0.29
0.5
25
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 150°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
MAX
2.10
3
±100
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
4-2004
IDSS
2
TYP
050-7142 Rev D
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT17N80BC3_SC3
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1045
C rss
Reverse Transfer Capacitance
f = 1 MHz
55
VGS = 0 to10V
90
VDD = 400V
11
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 17A @ 25°C
tf
15
VDD = 400V
ID = 17A @ 125°C
RG = 4.7Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
70
82
6
9
ns
245
VDD = 533V, VGS = 15V
6
nC
25
VGS = 10V
Turn-off Delay Time
pF
45
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
2255
VGS = 0V
3
MAX
ID = 17A, RG = 5Ω
140
INDUCTIVE SWITCHING @ 125°C
425
VDD = 533V, VGS = 15V
ID = 17A, RG = 5Ω
µJ
170
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
17
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -17A, dl S /dt = 100A/µs, VR = 400V)
550
ns
Q rr
Reverse Recovery Charge (IS = -17A, dl S /dt = 100A/µs, VR = 400V)
15
µC
dv/
Peak Diode Recovery
dt
dv/
51
(Body Diode)
1
(VGS = 0V, IS = -17A)
dt
5
1.2
Amps
Volts
6
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.60
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 115.92mH, RG = 25Ω, Peak IL = 3.4A
5 IS = -17A di/dt = 100A/µs VR = 480V TJ = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.60
0.9
0.50
0.7
0.40
0.3
0.20
t1
t2
SINGLE PULSE
0.10
0
Note:
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7142 Rev D
4-2004
0.70
0.30
0.1
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT17N80BC3_SC3
50
RC MODEL
Junction
temp (°C)
0.259
0.0050
Power
(watts)
0.341
0.135
ID, DRAIN CURRENT (AMPERES)
45
Case temperature (°C)
VGS =15 & 10V
40
35
6.5V
30
25
6V
20
5.5V
15
5V
10
4.5V
5
4V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
TJ = -55°C
TJ = +25°C
35
30
25
20
15
10
TJ = +125°C
5
0
0 1 2
3 4
5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.40
NORMALIZED TO
V
= 10V @ 8.5A
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
I
V
2.5
D
= 8.5A
GS
1.5
1.0
0.5
-25
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75
100 125 150
= 10V
2.0
0
-50
1.10
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3.0
30
FIGURE 5, RDS(ON) vs DRAIN CURRENT
FIGURE 4, TRANSFER CHARACTERISTICS
18
5
10
15
20
25
ID, DRAIN CURRENT (AMPERES)
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
4-2004
ID, DRAIN CURRENT (AMPERES)
45
0.7
0.6
-50
-25
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7142 Rev D
50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Typical Performance Curves
10,000
10
100µS
5
1mS
1
10mS
100
10
I
D
= 17A
12
VDS= 160V
8
VDS= 400V
VDS= 640V
4
0
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
90
V
td(off)
G
DD
R
= 5Ω
G
T = 125°C
J
50
J
tf
L = 100µH
= 533V
tr and tf (ns)
V
60
= 533V
= 5Ω
T = 125°C
40
70
DD
R
80
td(on) and td(off) (ns)
Coss
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
20
40
60
80
100 120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
L = 100µH
40
30
20
tr
30
10
20
td(on)
10
0
5
800
10
0
20
25
30
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
15
20
25
30
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
Eon
10
15
1000
L = 100µH
E ON includes
diode reverse recovery.
400
200
Eoff
SWITCHING ENERGY (µJ)
J
600
5
1200
= 533V
= 5Ω
T = 125°C
SWITCHING ENERGY (µJ)
1000
Crss
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
4-2004
Ciss
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
050-7142 Rev D
APT17N80BC3_SC3
20,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
51
Eoff
800
600
Eon
V
DD
400
I
D
= 533V
= 17A
T = 125°C
J
200
L = 100µH
EON includes
diode reverse recovery.
0
5
10
15
20
25
30
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT17N80BC3_SC3
90%
Gate Voltage
10 %
Gate Voltage
t
T = 125 C
J
d(off)
TJ = 125 C
td(on)
90%
Drain Current
Drain Current
90%
t
f
5%
tr
5%
Drain Voltage
10%
10 %
Drain Voltage
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF100
V CE
IC
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7142 Rev D
0.46 (.018)
0.56 (.022) {3 Plcs}
4-2004
3.50 (.138)
3.81 (.150)