APT5015BVFR
APT5015SVFR
500V
32A 0.150Ω
BVFR
POWER MOS V ®
FREDFET
D3PAK
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• TO-247 or Surface Mount D3PAK Package
SVFR
D
G
• Fast Recovery Body Diode
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5015BVFR_SVFR
UNIT
500
Volts
Drain-Source Voltage
32
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
370
Watts
Linear Derating Factor
2.96
W/°C
VGSM
PD
TJ,TSTG
128
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
30
(Repetitive and Non-Repetitive)
EAR
Volts
1
Amps
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
Volts
32
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.15
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1-2005
BVDSS
Characteristic / Test Conditions
050-5627 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT5015BVFR_SVFR
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
4400
5280
Coss
Output Capacitance
VDS = 25V
600
840
Crss
Reverse Transfer Capacitance
f = 1 MHz
230
350
Qg
Total Gate Charge
VGS = 10V
200
300
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
Qgd
Gate-Drain ("Miller") Charge
ID = ID [Cont.] @ 25°C
30
80
45
120
VGS = 15V
12
25
t d(on)
3
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
VDD = 0.5 VDSS
14
30
ID = ID [Cont.] @ 25°C
55
80
RG = 1.6Ω
11
20
TYP
MAX
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
dv/
MIN
32
Continuous Source Current (Body Diode)
Peak Diode Recovery
dt
1
2
dv/
128
(Body Diode)
dt
UNIT
Amps
(VGS = 0V, IS = -ID [Cont.])
1.3
Volts
5
15
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
525
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
1.6
Tj = 125°C
6.0
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
13
Tj = 125°C
21
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
TYP
MAX
0.34
40
VR = 200V.
D=0.5
0.05
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5627 Rev A
1-2005
0.4
0.2
0.01
0.001
10-5
t1
t2
SINGLE PULSE
10-4
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.54mH, R = 25Ω, Peak I = 32A
j
G
L
5 I - -I [Cont.], di/ = 100A/µs, V
S
D
DD - VDSS, Tj - 150°C, RG = 2.0Ω,
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT5015BVFR_SVFR
60
VGS=6V, 7V, 8V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
50
5.5V
40
30
5V
20
4.5V
10
4V
0
50
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
40
30
20
TJ = +125°C
10
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
30
25
20
15
10
5
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
30
5V
20
4.5V
10
4V
1.5
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.4
1.3
1.2
VGS=10V
VGS=20V
1.1
1.0
0.9
0
20
40
60
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
5.5V
40
1.1
1.0
0.9
0.8
1-2005
ID, DRAIN CURRENT (AMPERES)
35
VGS=7V, 8V & 10V
6V
0
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
50
0
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
60
VGS=15V
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5627 Rev A
ID, DRAIN CURRENT (AMPERES)
60
APT5015BVFR_SVFR
20,000
10µS
100
OPERATION HERE
LIMITED BY RDS (ON)
50
10,000
100µS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
200
1mS
10
5
10mS
1
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
VDS=100V
16
VDS=250V
12
VDS=400V
8
4
0
0
50
100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
300
100
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
Drain
1-2005
050-5627 Rev A
Drain
(Heat Sink)
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
TJ =+25°C
D PAK Package Outline (SVFR)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
TJ =+150°C
50
TO-247 Package Outline (BVFR)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Crss
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
D
Coss
1,000
100
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
Ciss
5,000
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated