APT60M75JVFR
600V
Ω
62A 0.075Ω
POWER MOS V® FREDFET
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• FAST RECOVERY BODY DIODE
D
G
• Popular SOT-227 Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT60M75JVFR
UNIT
600
Volts
Drain-Source Voltage
62
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
700
Watts
Linear Derating Factor
5.6
W/°C
VGSM
PD
TJ,TSTG
248
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
62
(Repetitive and Non-Repetitive)
EAR
Volts
1
Amps
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
Volts
62
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, ID = 31A)
TYP
MAX
0.075
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
2-2006
BVDSS
Characteristic / Test Conditions
050-7267 Rev A
Symbol
DYNAMIC CHARACTERISTICS
APT60M75JVFR
Characteristic
Symbol
Test Conditions
TYP
MAX
VGS = 0V
16500
19800
VDS = 25V
1900
2660
f = 1 MHz
750
1125
VGS = 10V
700
1050
VDD = 300V
ID = 62A @ 25°C
80
330
120
495
Turn-on Delay Time
VGS = 15V
20
40
Rise Time
VDD = 300V
20
40
ID = 62A @ 25°C
80
120
RG = 0.6Ω
12
24
TYP
MAX
C iss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
t d(on)
tr
t d(off)
Turn-off Delay Time
tf
Fall Time
MIN
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
62
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
Peak Diode Recovery
dt
dv/
UNIT
Amps
(Body Diode)
248
(VGS = 0V, IS = - 62A)
1.3
Volts
15
V/ns
dt
5
t rr
Reverse Recovery Time
(IS = -62A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -62A, di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
7.4
IRRM
Peak Recovery Current
(IS = -62A, di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
30
ns
µC
Amps
THERMAL/ PACKAGE CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
UNIT
0.18
40
°C/W
2500
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Volts
10
1 Repetitive Rating: Pulse width limited by maximum junction
lb•in
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.87mH, R = 25Ω, Peak I = 62A
j
G
L
5 I ≤ I = 62A, di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 600V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
0.1
D=0.5
0.05
0.2
0.1
0.01
0.005
0.05
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7267 Rev A
2-2006
0.2
0.01
SINGLE PULSE
0.001
0.0005
10-5
10-4
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
APT60M75JVFR
VGS=7V, 10V & 15V
200
6V
160
120
5.5V
80
5V
40
4.5V
ID, DRAIN CURRENT (AMPERES)
4V
0
50
100
150
200
250
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
80
TJ = +125°C
40
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
70
60
50
40
30
20
10
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
I
D
= 0.5 I
D
V
GS
5V
40
4.5V
1.20
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.15
1.10
VGS=10V
1.05
VGS=20V
1.00
0.95
0
25
50
75
100
125
150
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
1.2
[Cont.]
= 10V
2.0
1.5
1.0
0.5
0.0
-50
80
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.5
5.5V
1.1
1.0
0.9
0.8
2-2006
160
120
4V
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
6V
160
0
0
200
VGS=7V, 10V & 15V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7267 Rev A
ID, DRAIN CURRENT (AMPERES)
200
APT60M75JVFR
60,000
10µS
OPERATION HERE
LIMITED BY RDS (ON)
100
100µS
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
300
1mS
10
5
10mS
1
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
VDS=300V
12
VDS=480V
4
0
Crss
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
VDS=120V
8
Coss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
16
5,000
500
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
10,000
1,000
.1
20
Ciss
0
250
500
750
1000
1250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
50
TJ =+25°C
10
5
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
050-7267 Rev A
2-2006
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.