TYPICAL PERFORMANCE CURVES
®
1200V APT75GN120B2_L(G)
APT75GN120B2
APT75GN120L
APT75GN120B2G* APT75GN120LG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
(B2)
T-Max®
TO-264
(L)
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT75GN120B2_L(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
1
8
@ TC = 25°C
UNIT
Volts
200
99
Amps
225
@ TC = 150°C
225A @ 1200V
Switching Safe Operating Area @ TJ = 150°C
833
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
MAX
5.0
5.8
6.5
1.4
1.7
2.1
Units
1200
(VCE = VGE, I C = 3mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
2.0
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Volts
100
2
Gate-Emitter Leakage Current (VGE = ±20V)
600
10
Intergrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
nA
Ω
10-2005
V(BR)CES
MIN
Rev C
Characteristic / Test Conditions
050-7607
Symbol
APT75GN120B2_L(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
td(on)
tr
td(off)
tf
Eon1
Eon2
tr
td(off)
tf
9.0
VGE = 15V
425
Turn-on Switching Energy (Diode)
8045
TJ = +25°C
Inductive Switching (125°C)
60
VCC = 800V
41
VGE = 15V
725
RG = 1.0Ω 7
200
8620
I C = 75A
Current Fall Time
Turn-off Switching Energy
µJ
9620
7640
Turn-off Delay Time
44
Turn-on Switching Energy (Diode)
ns
110
RG = 1.0Ω 7
Current Rise Time
Turn-on Switching Energy
nC
620
6
Eon2
V
A
41
5
pF
225
I C = 75A
Turn-on Switching Energy
UNIT
245
VCC = 800V
4
MAX
30
VGE = 15V
Eon1
Eoff
Gate Charge
60
Current Fall Time
Turn-on Delay Time
210
Inductive Switching (25°C)
Turn-off Delay Time
td(on)
275
f = 1 MHz
15V, L = 100µH,VCE = 1200V
Current Rise Time
Turn-off Switching Energy
VGE = 0V, VCE = 25V
TJ = 150°C, R G = 4.3Ω 7, VGE =
Turn-on Delay Time
Eoff
4800
I C = 75A
Switching Safe Operating Area
TYP
Capacitance
VCE = 600V
Qge
SSOA
MIN
55
TJ = +125°C
ns
µJ
13000
66
11400
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.15
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
050-7607
Rev C
10-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8 Current limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
TJ = -55°C
120
TJ = 25°C
100
TJ = 125°C
80
60
40
20
0
IC, COLLECTOR CURRENT (A)
120
100
TJ = -55°C
80
TJ = 25°C
TJ = 125°C
60
40
20
0
0
10V
80
60
9V
40
8V
20
7V
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
100
0
2
4
6
8
10 12 14 16
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
140
11V
120
0
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
160
I = 75A
C
T = 25°C
J
14
VCE = 240V
12
VCE = 600V
10
VCE = 960V
8
6
4
2
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
0
100
IC = 150A
3.0
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
IC = 75A
2.0
1.5
IC = 37.5A
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
500
3.5
3.0
IC = 150A
2.5
IC = 75A
2.0
1.5
IC = 37.5A
1.0
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
300
IC, DC COLLECTOR CURRENT(A)
1.05
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE
1.15
1.10
200
300
400
GATE CHARGE (nC)
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
13 &15V
12V
140
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
= 15V
250
200
150
100
50
0
-50
Lead Temperature
Limited
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
10-2005
GE
Rev C
V
140
APT75GN120B2_L(G)
160
050-7607
160
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
60
VGE = 15V
50
40
30
20
VCE = 800V
TJ = 25°C, or =125°C
RG = 1.0Ω
L = 100µH
10
0
300
200
V = 800V
100 RCE= 1.0Ω
G
L = 100µH
120
TJ = 25 or 125°C,VGE = 15V
100
80
60
200
TJ = 125°C, VGE = 15V
150
100
TJ = 25°C, VGE = 15V
50
0
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
50000
25000
EOFF, TURN OFF ENERGY LOSS (µJ)
V
= 800V
CE
V
= +15V
GE
R = 1.0Ω
G
40000
TJ = 125°C
30000
20000
10000
TJ = 25°C
0
= 800V
V
CE
= +15V
V
GE
T = 125°C
80000
60000
Eoff,150A
40000
Eon2,75A
Eon2,37.5A
Eoff,75A
Eoff,37.5A
50
40
30
20
10
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
TJ = 125°C
15000
10000
TJ = 25°C
5000
50000
Eon2,150A
J
20000
G
20000
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (µJ)
100000
= 800V
V
CE
= +15V
V
GE
R = 1.0Ω
0
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
0
RG = 1.0Ω, L = 100µH, VCE = 800V
250
tf, FALL TIME (ns)
tr, RISE TIME (ns)
VGE =15V,TJ=25°C
400
300
RG = 1.0Ω, L = 100µH, VCE = 800V
0
EON2, TURN ON ENERGY LOSS (µJ)
500
180
20
SWITCHING ENERGY LOSSES (µJ)
VGE =15V,TJ=125°C
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
40
10-2005
600
0
140
Rev C
700
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
160
050-7607
APT75GN120B2_L(G)
800
70
= 800V
V
CE
= +15V
V
GE
R = 1.0Ω
Eon2,150A
G
40000
30000
20000
Eoff,150A
Eon2,75A
10000
Eoff,75A
Eoff,37.5A
0
Eon2,37.5A
125
100
75
50
25
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
Cies
1,000
500
Coes
200
150
100
50
Cres
100
APT75GN120B2_L(G)
250
6,000
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.14
D = 0.9
0.12
0.7
0.10
0.5
0.08
Note:
0.06
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.16
0.3
0.04
t2
0.02
0
t1
t
SINGLE PULSE
0.1
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
Power
(watts)
0.0630
0.0182
0.0139
0.203
1.62
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
10
5
1
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 1.0Ω
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
G
10
30
50
70 90 110 130 150
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10-2005
0.0686
Rev C
RC MODEL
050-7607
Junction
temp. (°C)
FMAX, OPERATING FREQUENCY (kHz)
60
APT75GN120B2_L(G)
APT75DQ120
Gate Voltage
10%
TJ = 125°C
td(on)
tr
V CE
IC
V CC
Collector Current
90%
5%
5%
10%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
td(off)
Collector Voltage
90%
tf
10%
Collector Current
0
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
TO-264(L) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
4.50
(.177) Max.
10-2005
Rev C
050-7607
1.01 (.040)
1.40 (.055)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
Collector
Collector
5.38 (.212)
6.20 (.244)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.