ADPOW APTGF150H120

APTGF150H120
Full - Bridge
NPT IGBT Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G1
VBUS
G2
0/VBUS
E1
E2
E3
E4
G3
G4
OUT2
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
Tc = 25°C
Max ratings
1200
200
150
400
±20
1040
Tj = 150°C
300A @ 1200V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGF150H120 – Rev 1 March, 2004
OUT1
APTGF150H120
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
IF(AV)
Test Conditions
VGE = 0V, IC = 2mA
VGE = 0V
Tj = 25°C
VCE = 1200V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 150A
Tj = 125°C
VGE = VCE, IC = 5 mA
VGE = ±20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 150A
RG = 5Ω
Min
Tc = 85°C
Max
0.2
12
3.3
4
3
4.5
Min
Test Conditions
Typ
1200
mA
V
6.5
±500
V
nA
Typ
10.5
1.5
0.8
70
50
500
30
8.5
9
Max
Unit
Typ
Max
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 150A
IF = 200A
IF = 200A
Tj = 150°C
125
2.2
2.4
2.2
Qrr
Reverse Recovery Charge
IF = 150A
Tj = 25°C
6.5
Tj = 125°C
20
APT website – http://www.advancedpower.com
3.9
Unit
V
nF
ns
mJ
Unit
A
2.5
V
µC
2-5
APTGF150H120 – Rev 1 March, 2004
Electrical Characteristics
APTGF150H120
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
Mounting torque
For terminals
Package Weight
Min
IGBT
Diode
Typ
Max
0.12
0.26
2500
M6
M5
-40
-40
-40
3
2
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGF150H120 – Rev 1 March, 2004
Package outline
APTGF150H120
Typical Performance Curve
Output characteristics (VGE=15V)
Output characteristics (VGE=10V)
175
250µs Pulse Test
< 0.5% Duty cycle
200
175
TJ=25°C
Ic, Collector current (A)
150
125
100
75
50
TJ=125°C
25
0
1
2
3
VCE, Collector to Emitter Voltage (V)
50
TJ=125°C
25
0
1
2
3
VCE, Collector to Emitter Voltage (V)
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
75
250µs Pulse Test
< 0.5% Duty cycle
250
200
150
100
50
4
6
8
10
VGE, Gate to Emitter Voltage (V)
12
VCE=800V
8
4
0
0
250
500
750
1000
Gate Charge (nC)
1250
Capacitance vs Collector to Emitter Voltage
C, Capacitance (nF)
tdon
tf
tr
VCE=600V
100
tdoff
100
IC = 150A
TJ = 25°C
16
12
Switching times vs collector current
VCE = 600V
VGE=±15V
RG=5
TJ = 125°C
4
Gate Charge
20
0
time (ns)
100
4
Transfer Characteristics
300
Cies
10
Coes
1
Cres
0.1
10
0
50
100
150
Ic, Collector current (A)
0
200
40
Eon
30
Eoff
20
10
15
20
25
30
DC Collector Current vs Case Temperature
200
Ic, DC Collector Current (A)
VCE = 600V
VGE=±15V
IC=150A
TJ = 125°C
50
5
VCE, Collector to Emitter Voltage (V)
Switching energy losses vs Gate resistance
60
Switching Energy losses (mJ)
TJ=25°C
125
0
0
1000
250µs Pulse Test
< 0.5% Duty cycle
150
10
175
150
125
100
75
50
25
0
0
0
4
8 12 16 20 24
Gate resistance (Ohms)
28
32
0
25
50
75
100 125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
4-5
APTGF150H120 – Rev 1 March, 2004
Ic, Collector current (A)
225
APTGF150H120
Minimum Switching Safe Operating
300
VCE = 600V, VGE=±15V
IC=150A, TJ = 125°C
250
tdoff
1000
200
150
100
tdon
tr
100
tf
50
0
10
0
300
600
900
1200 1500
VCE, Collector to Emitter Voltage (V)
0.12
0.1
0.08
0.06
0.04
0.02
0
10
20
30
Gate resistance (Ohms)
40
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
Thermal Impedance (°C/W)
Switching times vs gate resistor
10000
time (ns)
IC, Collector current (A)
350
Area
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
VCE = 800V
D = 50%
RG = 5
TJ = 125°C
80
60
40
20
0
0
50
100
150
IC, Collector Current (A)
200
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGF150H120 – Rev 1 March, 2004
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
100