APTGF150SK120T Buck chopper NPT IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies NTC2 Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Q1 G1 E1 OUT 0/VBU S SENSE 0/VBU S NTC1 0/VBUS SENSE VBUS E1 G1 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile OUT OUT 0/VBUS NT C2 0/VBUS SENSE NT C1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 200 150 300 ±20 961 Tj = 150°C 300A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGF150SK120T – Rev 0 January, 2005 VBUS VCES = 1200V IC = 150A @ Tc = 80°C APTGF150SK120T Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 150A Tj = 125°C VGE = VCE, IC = 5 mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle trr Qrr Reverse Recovery Time Reverse Recovery Charge 3.7 Typ Max Unit nF ns ns mJ Max 500 Tj = 125°C 1000 IF = 200A IF = 400A IF = 200A IF = 200A VR = 800V Tj = 125°C Tj = 25°C 420 di/dt =400A/µs Tj = 125°C 520 IF = 200A VR = 800V Tj = 25°C 2.5 Tj = 125°C 10.7 APT website – http://www.advancedpower.com V Unit V 200 2 2.3 1.8 di/dt =400A/µs mA V nA Tj = 25°C Tc = 70°C Unit 6.5 ±500 1200 Maximum Reverse Leakage Current Diode Forward Voltage Typ 10.2 1.4 0.75 120 50 310 20 Max 3 130 60 360 30 18 8 Min Maximum Peak Repetitive Reverse Voltage IRM VF 4.5 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 150A R G = 5.6Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 150A R G = 5.6Ω Test Conditions Typ 0.1 5 3.2 3.9 µA A 2.5 V ns µC 2-5 APTGF150SK120T – Rev 0 January, 2005 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics APTGF150SK120T Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = R 25 Max Unit kΩ K Min Typ Max 0.13 0.32 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 68 4080 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M5 2500 -40 -40 -40 °C/W V 150 125 100 4.7 160 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGF150SK120T – Rev 0 January, 2005 Package outline APTGF150SK120T Typical Performance Curve Output Characteristics 300 250 250 TJ = 125°C 150 VGE =12V 150 V GE=9V 100 TJ=125°C 50 50 0 0 0 1 2 3 VCE (V) 4 5 6 0 1 2 3 4 VCE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 300 56 V CE = 600V V GE = 15V RG = 5.6 Ω T J = 125°C 48 250 40 150 E (mJ) 200 IC (A) VGE=20V 200 100 T J=125°C 100 Eon 32 24 16 T J=25°C 50 Eoff 8 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 IC (A) V GE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 70 350 50 40 300 250 Eon IC (A) VCE = 600V VGE =15V IC = 150A TJ = 125°C 60 E (mJ) VGE =15V T J=25°C 200 IC (A) IC (A) Output Characteristics (VGE=15V) 300 30 20 200 150 VGE=15V T J=125°C RG=5.6 Ω 100 Eoff 50 10 0 0 0 5 0 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms) 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.12 0.9 0.1 0.7 0.08 IGBT 0.5 0.06 0.04 0.02 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGF150SK120T – Rev 0 January, 2005 Thermal Impedance (°C/W) 0.14 APTGF150SK120T VCE =600V D=50% RG=5.6 Ω TJ =125°C TC=75°C 90 80 70 ZCS 60 50 400 ZVS 40 30 hard switching 20 10 0.9 0.25 0.7 0.1 0.05 200 T J=25°C 80 120 IC (A) 160 0 200 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 0.2 T J=125°C 0 40 0.35 0.15 300 100 0 0 Thermal Impedance (°C/W) Forward Characteristic of diode 500 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 Diode 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGF150SK120T – Rev 0 January, 2005 rectangular Pulse Duration (Seconds)