APTGF150X60E3 3 Phase bridge NPT IGBT Power Module VCES = 600V IC = 150A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration • • • • Benefits 15 • 20 14 21 13 1 2 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area • • • • • • • Outstanding performance at high frequency operation Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile TC = 25°C Max ratings 600 225 150 450 ±20 700 Tj = 125°C 400A@480V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2003 17 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF150X60E3 – Rev 0 19 APTGF150X60E3 ICES All ratings @ Tj = 25°C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGE = 0V, IC = 500µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Min 600 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5Ω Min Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 200A VGE = 0V Typ 9000 800 163 43 253 2.5 IF = 200A VR = 300V di/dt =800A/µs IF = 200A VR = 300V di/dt =800A/µs Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink Package Weight 6.5 400 V nA Max Unit pF ns 49 ns 285 41 Tj = 125°C 4.1 Tj = 25°C 13 Tj = 125°C 20 Min IGBT Diode Typ mJ Max 1.6 -40 -40 -40 3 Unit V mJ µC Max 0.18 0.32 2500 APT website – http://www.advancedpower.com V 180 Typ 1.25 1.2 M5 Unit V µA mA 33 Min Symbol Characteristic TJ TSTG TC Torque Wt 500 Tj = 25°C Tj = 125°C Thermal and package characteristics VISOL 1 1 2.0 2.2 6.3 Symbol Characteristic VF Max 4.5 Turn off Energy Reverse diode ratings and characteristics RthJC 1.7 Typ Unit °C/W July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage V 150 125 125 4.5 300 °C N.m g 2-3 APTGF150X60E3 – Rev 0 Electrical Characteristics APTGF150X60E3 Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGF150X60E3 – Rev 0 July, 2003 PIN 21