ADPOW APTGF150X60E3

APTGF150X60E3
3 Phase bridge
NPT IGBT Power Module
VCES = 600V
IC = 150A @ Tc = 80°C
Application
•
AC Motor control
Features
Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
•
•
•
•
Benefits
15
•
20
14
21
13
1 2
3 4
5 6
7 8
9 10
11 12
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
•
•
•
•
•
•
•
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
TC = 25°C
Max ratings
600
225
150
450
±20
700
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
July, 2003
17
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGF150X60E3 – Rev 0
19
APTGF150X60E3
ICES
All ratings @ Tj = 25°C unless otherwise specified
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eoff
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGE = 0V, IC = 500µA
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
Min
600
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5Ω
Min
Diode Forward Voltage
Er
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Test Conditions
IF = 200A
VGE = 0V
Typ
9000
800
163
43
253
2.5
IF = 200A
VR = 300V
di/dt =800A/µs
IF = 200A
VR = 300V
di/dt =800A/µs
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
Package Weight
6.5
400
V
nA
Max
Unit
pF
ns
49
ns
285
41
Tj = 125°C
4.1
Tj = 25°C
13
Tj = 125°C
20
Min
IGBT
Diode
Typ
mJ
Max
1.6
-40
-40
-40
3
Unit
V
mJ
µC
Max
0.18
0.32
2500
APT website – http://www.advancedpower.com
V
180
Typ
1.25
1.2
M5
Unit
V
µA
mA
33
Min
Symbol Characteristic
TJ
TSTG
TC
Torque
Wt
500
Tj = 25°C
Tj = 125°C
Thermal and package characteristics
VISOL
1
1
2.0
2.2
6.3
Symbol Characteristic
VF
Max
4.5
Turn off Energy
Reverse diode ratings and characteristics
RthJC
1.7
Typ
Unit
°C/W
July, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
V
150
125
125
4.5
300
°C
N.m
g
2-3
APTGF150X60E3 – Rev 0
Electrical Characteristics
APTGF150X60E3
Package outline
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGF150X60E3 – Rev 0
July, 2003
PIN 21