ADPOW APTGF15H120T3

APTGF15H120T3
Full - Bridge
NPT IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
19
Q2
22
7
23
8
CR2
26
Q3
11
10
CR4
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Q4
4
27
3
29
31
30
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
25
15
60
±20
140
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
September, 2004
CR3
CR1
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF15H120T3 – Rev 0
Q1
18
VCES = 1200V
IC = 15A @ Tc = 80°C
APTGF15H120T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
BVCES
VGE = 0V, IC = 500µA
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 15A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
1200
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
ICES
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
2.5
Typ
Max
Unit
1
1
3.2
4.0
500
V
µA
mA
4
VGE = 15V
VBus = 300V
IC =15A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 15A
R G = 33Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 15A
R G = 33Ω
Typ
1000
150
70
99
10
70
60
50
315
3.7
V
6
400
V
nA
Max
Unit
pF
nC
ns
30
60
50
356
40
2
1
ns
mJ
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
VRRM
Test Conditions
Min
Typ
Max
1200
Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1200V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 15A
VGE = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 15A
VR = 600V
di/dt =400A/µs
V
Tj = 25°C
Tj = 125°C
250
500
Tc = 80°C
Tj = 25°C
Tj = 125°C
2.9
2.6
Tj = 125°C
0.5
Tj = 25°C
0.4
Tj = 125
1.2
APT website – http://www.advancedpower.com
Unit
15
µA
A
3.4
September, 2004
Symbol Characteristic
V
µs
µC
2-6
APTGF15H120T3 – Rev 0
Reverse diode ratings and characteristics
APTGF15H120T3
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.9
2.0
Unit
T: Thermistor temperature
Thermal and package characteristics
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
68
4080

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Symbol Characteristic
RthJC
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
APT website – http://www.advancedpower.com
3-6
APTGF15H120T3 – Rev 0
28
17
1
September, 2004
Package outline
APTGF15H120T3
Typical Performance Curve
Output characteristics (V GE=15V)
250µs Pulse Test
< 0.5% Duty cycle
60
TJ=25°C
50
40
30
TJ=125°C
20
10
14
12
TJ=25°C
10
8
6
4
T J=125°C
2
1
2
3
4
5
6
7
VCE , Collector to Emitter Voltage (V)
0
8
VGE , Gate to Emitter Voltage (V)
Transfer Characteristics
70
250µs Pulse Test
< 0.5% Duty cycle
60
50
40
30
20
TJ =125°C
10
TJ =25°C
0
2.5
5
7.5
10
12.5
VGE, Gate to Emitter Voltage (V)
TJ = 125°C
250µs Pulse Test
< 0.5% Duty cycle
8
7
Ic=30A
6
5
Ic=15A
4
3
2
Ic=7.5A
1
0
9
10
11
12
13
14
15
2
2.5
3
3.5
Gate Charge
IC = 15A
TJ = 25°C
16
V CE=240V
V CE =600V
14
12
V CE=960V
10
8
6
4
2
0
0
16
6
20
40
60
80
100
120
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V G E = 15V
5
3
Ic=7.5A
2
1
0
-50
40
Ic, DC Collector Current (A)
1.05
1.00
0.95
0.90
0.85
0.80
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
35
September, 2004
Breakdown Voltage vs Junction Temp.
1.10
Ic=30A
Ic=15A
4
VGE , Gate to Emitter Voltage (V)
Collector to Emitter Breakdown Voltage
(Normalized)
1.5
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
9
1
18
15
VCE, Collector to Emitter Voltage (V)
0
0.5
VCE, Collector to Emitter Voltage (V)
30
25
20
15
10
5
0
-50
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
-50
-25
0
25 50
75 100 125 150
T C, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF15H120T3 – Rev 0
0
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
0
0
V CE, Collector to Emitter Voltage (V)
Output Characteristics (VGE=10V)
16
Ic, Collector Current (A)
Ic, Collector Current (A)
70
APTGF15H120T3
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VCE = 600V
RG = 33Ω
70
65
V GE = 15V
60
55
50
0
5
10
15
20
25
30
400
VGE=15V,
TJ=125°C
350
300
VCE = 600V
RG = 33Ω
200
35
0
5
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
RG = 33Ω
120
45
tf, Fall Time (ns)
tr, Rise Time (ns)
20
25
30
35
Current Fall Time vs Collector Current
80
V GE=15V
40
0
0
TJ = 125°C
40
35
TJ = 25°C
30
5
10
15
20
25
30
VCE = 600V, VGE = 15V, RG = 33Ω
20
35
0
5
10
15
20
25
30
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
VCE = 600V
RG = 33Ω
7
6
T J=125°C,
VGE =15V
5
4
T J=25°C,
VGE=15V
3
2
1
0
0
5
10
15
20
25
30
ICE , Collector to Emitter Current (A)
T J = 125°C
1.5
TJ = 25°C
1
0.5
0
35
0
5
10
15
20
25
30
ICE , Collector to Emitter Current (A)
35
Minimum Switching Safe Operating Area
35
Eon, 15A
5
4
Eoff, 15A
3
2
1
0
30
September, 2004
IC, Collector Current (A)
VCE = 600V
VGE = 15V
TJ= 125°C
6
VCE = 600V
VGE = 15V
RG = 33Ω
2
Switching Energy Losses vs Gate Resistance
7
35
Turn-Off Energy Loss vs Collector Current
2.5
Turn-On Energy Loss vs Collector Current
8
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
15
50
25
Switching Energy Losses (mJ)
10
ICE, Collector to Emitter Current (A)
160
8
VGE =15V,
T J=25°C
250
25
20
15
10
5
0
0
20
40
60
80
Gate Resistance (Ohms)
100
120
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
APT website – http://www.advancedpower.com
5-6
APTGF15H120T3 – Rev 0
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
75
APTGF15H120T3
Cies
1000
Coes
100
Cres
10
0
10
20
30
40
VCE , Collector to Emitter Voltage (V)
Thermal Impedance (°C/W)
120
100
80
ZVS
V CE = 600V
D = 50%
RG = 33Ω
TJ = 125°C
TC = 75°C
60
40
ZCS
Hard
switching
20
0
50
0
5
10
15
20
IC, Collector Current (A)
25
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.9
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
0.9
0.8
0.7
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.00001
0.5
0.3
0.1
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTGF15H120T3 – Rev 0
September, 2004
Rectangular Pulse Duration (Seconds)