APTGF180DU60T Dual common source NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies Features C2 C1 · Q1 Q2 G1 G2 E1 E2 E NTC1 NTC2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1 G2 NTC1 · · Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration · · Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Easy paralleling due to positive TC of VCEsat · Low profile Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 600 220 180 630 ±20 833 630A @ 600V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF180DU60T – Rev 1 March, 2004 Symbol VCES APTGF180DU60T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 150µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C T j = 25°C VGE =15V IC = 180A Tj = 125°C VGE = VCE, IC = 2mA VGE = 20 V, VCE = 0V Min 600 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 2.0 2.2 3 Max 150 3000 2.5 Unit V µA V 5 ±200 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Eoff Turn-off Switching Energy v VGS = 15V VBus = 300V IC = 180A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 W Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 W Typ 8.6 0.94 0.8 660 580 400 26 25 150 30 6.74 5.74 26 25 170 40 8.6 nF nC ns mJ ns mJ 7 Reverse diode ratings and characteristics VF Reverse Recovery Time Qrr Reverse Recovery Charge 50% duty cycle IF = 120A IF = 240A IF = 120A Diode Forward Voltage trr Test Conditions IF = 120A VR = 400V di/dt =800A/µs IF = 120A VR = 400V di/dt =800A/µs Min Tj = 125°C Typ 120 1.6 1.9 1.4 Tj = 25°C 85 Tj = 125°C 160 Tj = 25°C 520 Tj = 125°C 2800 Tc = 70°C Max Unit A 1.8 V ns nC u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1 APT website – http://www.advancedpower.com 2-6 APTGF180DU60T – Rev 1 March, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTGF180DU60T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight Max 0.15 0.32 2500 Unit °C/W V -40 -40 -40 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R25 T: Thermistor temperature é æ 1 1 öù RT: Thermistor value at T expê B25 / 85 çç - ÷÷ú è T25 T øû ë APT website – http://www.advancedpower.com 3-6 APTGF180DU60T – Rev 1 March, 2004 Package outline APTGF180DU60T Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) TJ=-55°C 250µs Pulse Test < 0.5% Duty cycle 500 600 TJ=25°C Ic, Collector Current (A) 400 300 TJ=125°C 200 100 250µs Pulse Test < 0.5% Duty cycle 500 400 TJ=25°C 300 200 TJ=125°C 100 0 0 0 1 2 3 0 4 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 500 400 300 200 TJ=125°C 100 TJ=25°C TJ=-55°C 0 VCE, Collector to Emitter Voltage (V) 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 6 Ic=360A 5 4 3 Ic=180A 2 Ic=90A 1 0 6 8 10 12 14 14 VCE=120V VCE=300V 12 10 VCE=480V 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle IC = 180A TJ = 25°C 16 10 8 7 4 Gate Charge 18 VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 600 On state Voltage vs Junction Temperature 4 3.5 Ic=360A 3 2.5 Ic=180A 2 1.5 Ic=90A 1 0.5 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0 16 -50 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 320 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) 240 160 80 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF180DU60T – Rev 1 March, 2004 Ic, Collector Current (A) 600 APTGF180DU60T Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 2.5Ω 20 15 50 100 150 200 250 250 VGE=15V, TJ=125°C 200 150 100 VCE = 400V RG = 2.5Ω 50 300 50 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 250 300 60 VCE = 400V, VGE = 15V, RG = 2.5Ω tf, Fall Time (ns) tr, Rise Time (ns) 200 Current Fall Time vs Collector Current VCE = 400V RG = 2.5Ω VGE=15V, TJ=125°C 40 20 60 TJ = 125°C 40 TJ = 25°C 20 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 50 300 Eoff, Turn-off Energy Loss (mJ) TJ=125°C, VGE=15V 8 TJ=25°C, VGE=15V 4 0 50 100 150 200 250 VCE = 400V VGE = 15V RG = 2.5Ω 10 8 4 2 0 300 50 Switching Energy Losses (mJ) 24 Eoff, 360A Eoff, 180A 16 Eon, 180A Eoff, 90A 8 Eon, 90A 0 0 5 10 15 20 Gate Resistance (Ohms) 25 100 150 200 250 ICE, Collector to Emitter Current (A) 300 Switching Energy Losses vs Junction Temp. Switching Energy Losses vs Gate Resistance Eon, 360A TJ = 125°C TJ = 25°C 6 ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V TJ = 125°C 300 12 VCE = 400V RG = 2.5Ω 12 100 150 200 250 I CE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 16 Eon, Turn-On Energy Loss (mJ) 150 80 0 Switching Energy Losses (mJ) 100 ICE, Collector to Emitter Current (A) 80 32 VGE=15V, TJ=25°C 20 VCE = 400V VGE = 15V RG = 2.5Ω 16 Eon, 360A Eoff, 360A 12 Eon, 180A 8 Eoff, 180A 4 Eoff, 90A Eon, 90A 0 0 25 50 75 100 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 125 5-6 APTGF180DU60T – Rev 1 March, 2004 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF180DU60T Capacitance vs Collector to Emitter Voltage Minimum Switching Safe Operating Area 700 IC, Collector Current (A) C, Capacitance (pF) 100000 Cies 10000 Coes 1000 Cres 600 500 400 300 200 100 0 100 0 10 20 30 40 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.12 0.9 0.35 0.1 0.08 0.06 0.25 0.15 0.04 0.02 0.05 0.025 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 VCE = 400V D = 50% RG = 2.5Ω TJ = 125°C 80 60 40 20 0 40 80 120 160 200 IC, Collector Current (A) 240 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF180DU60T – Rev 1 March, 2004 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100