ADPOW APTGF25DDA120T3

APTGF25DDA120T3
Dual Boost Chopper
NPT IGBT Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
13 14
CR2
CR1
23
8
Q1
Q2
26
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
40
25
100
±20
208
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
January, 2005
7
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF25DDA120T3 – Rev 0
22
VCES = 1200V
IC = 25A @ Tc = 80°C
APTGF25DDA120T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Test Conditions
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
Min
Tj = 25°C
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 25A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
VGE = 0V
VCE = 1200V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
2.5
Typ
Max
Unit
1
1
3.2
4.0
500
µA
mA
4
Min
VGE = 15V
VBus = 300V
IC =25A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 25A
R G = 22Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 25A
R G = 22Ω
Typ
1650
250
110
160
10
70
60
50
305
3.7
V
6
400
V
nA
Max
Unit
pF
nC
ns
30
60
50
346
40
3.5
1.5
ns
mJ
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
VRRM
Test Conditions
Min
Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
IF(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Max
1200
Maximum Peak Repetitive Reverse Voltage
IRM
VF
Typ
V
250
500
Tj = 125°C
60
2
2.3
1.8
Tj = 25°C
400
di/dt =200A/µs
Tj = 125°C
470
IF = 60A
VR = 800V
Tj = 25°C
1.2
Tj = 125°C
4
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 800V
di/dt =200A/µs
APT website – http://www.advancedpower.com
Unit
µA
A
2.5
January, 2005
Symbol Characteristic
V
ns
µC
2-6
APTGF25DDA120T3 – Rev 0
Reverse diode ratings and characteristics
APTGF25DDA120T3
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.6
0.9
Unit
T: Thermistor temperature
Thermal and package characteristics
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
68
4080

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Symbol Characteristic
RthJC
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
°C/W
V
150
125
100
4.7
110
°C
N.m
g
Package outline
12
APT website – http://www.advancedpower.com
3-6
APTGF25DDA120T3 – Rev 0
January, 2005
28
17
1
APTGF25DDA120T3
Typical Performance Curve
T J=25°C
Output characteristics
(VGE=15V)
250µs Pulse Test
< 0.5% Duty cycle
70
60
50
TJ=125°C
40
30
20
10
1
2
3
4
5
6
7
VCE, Collector to Emitter Voltage (V)
8
TJ=125°C
4
0
8
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
100
80
60
40
TJ=125°C
20
TJ=25°C
0
2.5
5
7.5
10
12.5
V GE, Gate to Emitter Voltage (V)
T J = 125°C
8
250µs Pulse Test
< 0.5% Duty cycle
7
Ic=50A
6
5
Ic=25A
4
3
2
Ic=12.5A
1
0
9
10
11
12
13
14
15
1.5
2
2.5
3
3.5
IC = 25A
16
V CE =240V
TJ = 25°C
V CE=600V
14
12
10
V CE=960V
8
6
4
2
0
0
30
60
90
120
150
180
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
9
1
Gate Charge
18
15
16
VCE, Collector to Emitter Voltage (V)
0
0.5
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
120
Ic, Collector Current (A)
12
6
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V GE = 15V
5
4
Ic=12.5A
2
1
0
-50
60
Ic, DC Collector Current (A)
1.05
1.00
0.95
0.90
0.85
0.80
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
50
January, 2005
Breakdown Voltage vs Junction Temp.
Ic=25A
3
VGE, Gate to Emitter Voltage (V)
1.10
Ic=50A
40
30
20
10
0
-50
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
-50
-25
0
25 50 75 100 125 150
TC , Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF25DDA120T3 – Rev 0
0
Collector to Emitter Breakdown Voltage
(Normalized)
TJ=25°C
250µs Pulse Test
< 0.5% Duty cycle
16
0
0
VCE, Collector to Emitter Voltage (V)
Output Characteristics (VGE=10V)
20
Ic, Collector Current (A)
Ic, Collector Current (A)
80
APTGF25DDA120T3
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VCE = 600V
R G = 22Ω
70
65
VGE = 15V
60
55
50
5
15
25
35
45
400
VGE =15V,
TJ=125°C
350
300
VCE = 600V
RG = 22Ω
200
55
5
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
R G = 22Ω
120
45
tf, Fall Time (ns)
tr, Rise Time (ns)
35
45
55
Current Fall Time vs Collector Current
80
VGE=15V
40
0
5
TJ = 125°C
40
35
TJ = 25°C
30
15
25
35
45
VCE = 600V, VGE = 15V, R G = 22Ω
20
55
5
ICE, Collector to Emitter Current (A)
VCE = 600V
RG = 22Ω
8
TJ=125°C,
VGE =15V
6
4
TJ=25°C,
VGE=15V
2
0
55
4
VCE = 600V
VGE = 15V
RG = 22Ω
3
TJ = 125°C
2
TJ = 25°C
1
0
5
15
25
35
45
ICE, Collector to Emitter Current (A)
55
5
Switching Energy Losses vs Gate Resistance
15
25
35
45
ICE, Collector to Emitter Current (A)
55
Minimum Switching Safe Operating Area
60
IC, Collector Current (A)
Eon, 25A
3
Eoff, 25A
2
1
0
50
40
January, 2005
VCE = 600V
VGE = 15V
TJ= 125°C
4
15
25
35
45
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
10
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
25
50
25
Switching Energy Losses (mJ)
15
ICE, Collector to Emitter Current (A)
160
5
VGE =15V,
T J=25°C
250
30
20
10
0
0
10
20
30
40
Gate Resistance (Ohms)
50
60
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
APT website – http://www.advancedpower.com
5-6
APTGF25DDA120T3 – Rev 0
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
75
APTGF25DDA120T3
Capacitance vs Collector to Emitter Voltage
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
10000
Cies
1000
Coes
100
Cres
10
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
100
80
ZVS
V CE = 600V
D = 50%
RG = 22Ω
TJ = 125°C
TC = 75°C
60
40
ZCS
20
Hard
switching
0
0
10
20
30
IC, Collector Current (A)
40
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
Thermal Impedance (°C/W)
50
Operating Frequency vs Collector Current
120
0.6
0.9
0.5
0.7
0.4
0.3
0.2
0.1
0.3
0.1
Single Pulse
0.05
0.0001
0.001
0.01
Rectangular Pulse Duration (Seconds)
0.1
1
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTGF25DDA120T3 – Rev 0
January, 2005
0
0.00001
0.5