ADPOW APTGF50X120E3

APTGF50X120E3
3 Phase bridge
NPT IGBT Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
•
AC Motor control
Features
Non Punch Through (NPT) IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
•
19
17
•
•
•
15
Benefits
21
13
1 2
3 4
5 6
7 8
9 10
11 12
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
SCSOA
Short Circuit Save Operating Area
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
TC = 25°C
Max ratings
1200
78
50
150
±20
400
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
July, 2003
14
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGF50X120E3 – Rev 0
20
APTGF50X120E3
ICES
All ratings @ Tj = 25°C unless otherwise specified
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
VGE = 0V, IC = 3mA
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Test Conditions
Tj = 25°C
IF = 50A
VGE = 0V
Tj = 125°C
IF = 50A
VR = 600V
Tj = 125°C
di/dt =800A/µs
IF = 50A
Tj = 25°C
VR = 600V
di/dt =800A/µs Tj = 125°C
TJ
TSTG
TC
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
Typ
Max
0.8
4
2.5
3.1
1
4.5
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 22Ω
Symbol Characteristic
VISOL
2.0
Min
Thermal and package characteristics
RthJC
Min
1200
Typ
3300
500
220
44
V
nA
Max
Unit
ns
Max
2.8
200
Typ
Max
0.35
0.7
2500
M5
APT website – http://www.advancedpower.com
-40
-40
-40
3
V
µC
8
Min
Unit
ns
2.8
IGBT
Diode
V
pF
380
70
Typ
2.3
1.8
mA
3.0
3.7
6.5
200
56
Min
Unit
V
Unit
°C/W
V
150
125
125
4.5
300
°C
July, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
N.m
g
2-3
APTGF50X120E3 – Rev 0
Electrical Characteristics
APTGF50X120E3
Package outline
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGF50X120E3 – Rev 0
July, 2003
PIN 21