ADPOW APTGS50X170E2

APTGS50X170E2
3 Phase bridge
NPT IGBT Power Module
VCES = 1700V
IC = 50A @ Tc = 80°C
Application
•
AC Motor control
Features
Non Punch Through (NPT) Low Loss IGBT®
•
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
•
•
•
Pin out: APTGS50X170E2 (Long pins)
N-
U
V
W
Benefits
•
•
•
•
•
•
•
P+
1 2 3 4 5 6 7 8 9 10 11 12
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
All ratings @ Tj = 25°C unless otherwise specified
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operation Area
TC = 25°C
Max ratings
1700
100
50
150
±20
350
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
November, 2003
Symbol
VCES
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGS50X170E2– Rev 0
Absolute maximum ratings
APTGS50X170E2
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Cies
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eoff
Input Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn Off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VF
Diode Forward Voltage
Er
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Test Conditions
VGE = 0V, IC = 1mA
Tj = 25°C
VGE = 0V
VCE = 1700V
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2.2 mA
VGE = 20V, VCE = 0V
Min
Test Conditions
IF = 50A
VGE = 0V
IF = 50A
VR = 900V
di/dt =750A/µs
IF = 50A
VR = 900V
di/dt =750A/µs
Min
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
Max
0.02
1
2.7
3.2
0.1
Typ
3.3
V
Max
Unit
pF
ns
30
100
100
900
30
30
Tj = 25°C
2
Tj = 125°C
4
Tj = 25°C
6
Tj = 125°C
12
Min
IGBT
Diode
Typ
ns
mJ
Max
2.6
-40
-40
-40
2
Unit
V
mJ
µC
Max
0.37
0.63
3400
APT website – http://www.advancedpower.com
mA
V
nA
100
100
800
Typ
2.2
2.0
M5
Unit
V
6.5
100
3500
Tj = 25°C
Tj = 125°C
Symbol Characteristic
Junction to Case
Typ
3
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 50A
RG = 30Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 50A
RG = 30Ω
Thermal and package characteristics
RthJC
Min
1700
Unit
°C/W
V
150
125
125
3.5
185
November, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
°C
N.m
g
2-3
APTGS50X170E2– Rev 0
Electrical Characteristics
APTGS50X170E2
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGS50X170E2– Rev 0
November, 2003
Package outline