ADPOW APTGS50X170E3

APTGS50X170E3
3 Phase bridge
NPT IGBT Power Module
VCES = 1700V
IC = 50A @ Tc = 80°C
Application
•
AC Motor control
Features
Non Punch Through (NPT) Low Loss IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
•
19
17
•
•
•
15
Benefits
20
14
21
13
5 6
7 8
9 10
11 12
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Operating Area
TC = 25°C
Max ratings
1700
100
50
150
±20
480
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
July, 2003
3 4
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGS50X170E3 – Rev 0
1 2
•
•
•
•
•
•
•
APTGS50X170E3
ICES
All ratings @ Tj = 25°C unless otherwise specified
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Cies
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eoff
Test Conditions
VGE = 0V, IC = 1mA
Tj = 25°C
VGE = 0V
VCE = 1700V
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2.5 mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 50A
RG = 30Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 50A
RG = 30Ω
Input Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Er
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Test Conditions
IF = 50A
VGE = 0V
IF = 50A
VR = 900V
di/dt =750A/µs
IF = 50A
VR = 900V
di/dt =750A/µs
0.02
1.5
2.7
3.2
0.1
Typ
3.3
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
V
Max
Unit
pF
ns
30
100
100
ns
900
30
Tj = 25°C
2
Tj = 125°C
4
Tj = 25°C
6
Tj = 125°C
12
Min
IGBT
Diode
Typ
mJ
Max
2.6
-40
-40
-40
3
Unit
V
mJ
µC
Max
0.26
0.56
2500
APT website – http://www.advancedpower.com
mA
V
nA
100
100
800
Tj = 25°C
Tj = 125°C
M5
Unit
V
6.5
100
3500
Typ
2.2
2.0
Symbol Characteristic
TJ
TSTG
TC
Torque
Wt
Min
Min
Thermal and package characteristics
VISOL
Max
14.5
Symbol Characteristic
VF
Typ
4.5
Turn off Energy
Reverse diode ratings and characteristics
RthJC
Min
1700
Unit
°C/W
July, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
V
150
125
125
4.5
300
°C
N.m
g
2-3
APTGS50X170E3 – Rev 0
Electrical Characteristics
APTGS50X170E3
Package outline
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGS50X170E3 – Rev 0
July, 2003
PIN 21