APTGT300U170D4G Single switch Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal • High level of integration 2 1 4 5 3 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1700 530 300 600 ±20 1470 Tj = 125°C 600A@1650V TC = 25°C TC = 80°C TC = 25°C Unit V A March, 2006 5 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT300U170D4G – Rev 1 3 2 VCES = 1700V IC = 300A @ Tc = 80°C APTGT300U170D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn On Energy Eoff Turn Off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Forward Voltage Er Reverse Recovery Energy trr Reverse Recovery Time Qrr Reverse Recovery Charge 5.2 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 300A R G = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 300A R G = 4.7Ω VGE = ±15V Tj = 125°C VBus = 900V IC = 300A Tj = 125°C R G = 4.7Ω Min Test Conditions Min 1700 VR=1700V DC forward current VF Min IF = 300A VGE = 0V IF = 300A VR = 900V di/dt =3500A/µs Tj = 25°C Tj = 125°C Tc=80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C APT website – http://www.advancedpower.com Typ 2.0 2.4 5.8 Typ 25 0.9 280 100 750 Max Unit 1 2.4 mA 6.4 400 V nA Max Unit V nF ns 100 330 100 900 ns 200 115 mJ 95 Typ Max 750 1000 300 1.8 1.9 35 70 410 520 75 125 Unit V µA A 2.2 V mJ ns µC March, 2006 Test Conditions 2-5 APTGT300U170D4G – Rev 1 Symbol Characteristic APTGT300U170D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 3500 -40 -40 -40 3 1 Typ Max 0.085 0.13 Unit °C/W V 150 125 125 5 2 420 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT300U170D4G – Rev 1 March, 2006 D4 Package outline (dimensions in mm) APTGT300U170D4G Typical Performance Curve Output Characteristics 600 500 500 400 T J=125°C 300 VGE=15V 200 100 100 VGE=9V 0 0 1 2 VCE (V) 3 4 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current Transfert Characteristics 600 300 T J=25°C 500 VCE = 900V VGE = 15V RG = 4.7 Ω TJ = 125°C 250 400 200 E (mJ) T J=125°C 300 Eon Eoff 150 100 200 TJ=125°C 100 Er 50 0 0 5 6 7 8 9 10 0 11 100 Switching Energy Losses vs Gate Resistance 500 600 Eon 500 IC (A) 200 400 700 VCE = 900V VGE =15V IC = 300A T J = 125°C 250 300 Reverse Bias Safe Operating Area 350 300 200 IC (A) V GE (V) E (mJ) VGE=13V V GE=19V 300 200 0 IC (A) TJ = 125°C 400 T J=25°C IC (A) IC (A) Output Characteristics (V GE=15V) 600 150 Eoff 100 400 300 VGE=15V T J=125°C RG=4.7 Ω 200 Er 50 100 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 0 30 400 800 1200 1600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.07 0.06 0.05 0.9 IGBT 0.7 March, 2006 0.08 0.5 0.04 0.03 0.3 0.02 0.01 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT300U170D4G – Rev 1 Thermal Impedance (°C/W) 0.09 APTGT300U170D4G Forward Characteristic of diode 600 VCE =900V D=50% RG=4.7 Ω TJ =125°C TC=75°C ZVS 20 15 10 500 T J=25°C 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 25 ZCS 5 T J=125°C 100 0 0 60 T J=125°C 200 hard switching 0 300 120 180 240 IC (A) 300 360 0 420 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.14 0.12 0.9 0.1 0.7 0.08 Diode 0.5 0.06 0.04 0.02 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT300U170D4G – Rev 1 March, 2006 rectangular Pulse Duration (Seconds)