ADPOW APTGT300U170D4G

APTGT300U170D4G
Single switch
Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
1
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M6 connectors for power
- M4 connectors for signal
• High level of integration
2
1
4
5
3
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operation Area
TC = 25°C
Max ratings
1700
530
300
600
±20
1470
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
March, 2006
5
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT300U170D4G – Rev 1
3
2
VCES = 1700V
IC = 300A @ Tc = 80°C
APTGT300U170D4G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn On Energy
Eoff
Turn Off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 300A
Tj = 125°C
VGE = VCE , IC = 12mA
VGE = 20V, VCE = 0V
Forward Voltage
Er
Reverse Recovery Energy
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
5.2
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 300A
R G = 4.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 300A
R G = 4.7Ω
VGE = ±15V
Tj = 125°C
VBus = 900V
IC = 300A
Tj = 125°C
R G = 4.7Ω
Min
Test Conditions
Min
1700
VR=1700V
DC forward current
VF
Min
IF = 300A
VGE = 0V
IF = 300A
VR = 900V
di/dt =3500A/µs
Tj = 25°C
Tj = 125°C
Tc=80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
APT website – http://www.advancedpower.com
Typ
2.0
2.4
5.8
Typ
25
0.9
280
100
750
Max
Unit
1
2.4
mA
6.4
400
V
nA
Max
Unit
V
nF
ns
100
330
100
900
ns
200
115
mJ
95
Typ
Max
750
1000
300
1.8
1.9
35
70
410
520
75
125
Unit
V
µA
A
2.2
V
mJ
ns
µC
March, 2006
Test Conditions
2-5
APTGT300U170D4G – Rev 1
Symbol Characteristic
APTGT300U170D4G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
M6
M4
3500
-40
-40
-40
3
1
Typ
Max
0.085
0.13
Unit
°C/W
V
150
125
125
5
2
420
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT300U170D4G – Rev 1
March, 2006
D4 Package outline (dimensions in mm)
APTGT300U170D4G
Typical Performance Curve
Output Characteristics
600
500
500
400
T J=125°C
300
VGE=15V
200
100
100
VGE=9V
0
0
1
2
VCE (V)
3
4
0
1
2
3
VCE (V)
4
5
Energy losses vs Collector Current
Transfert Characteristics
600
300
T J=25°C
500
VCE = 900V
VGE = 15V
RG = 4.7 Ω
TJ = 125°C
250
400
200
E (mJ)
T J=125°C
300
Eon
Eoff
150
100
200
TJ=125°C
100
Er
50
0
0
5
6
7
8
9
10
0
11
100
Switching Energy Losses vs Gate Resistance
500
600
Eon
500
IC (A)
200
400
700
VCE = 900V
VGE =15V
IC = 300A
T J = 125°C
250
300
Reverse Bias Safe Operating Area
350
300
200
IC (A)
V GE (V)
E (mJ)
VGE=13V
V GE=19V
300
200
0
IC (A)
TJ = 125°C
400
T J=25°C
IC (A)
IC (A)
Output Characteristics (V GE=15V)
600
150
Eoff
100
400
300
VGE=15V
T J=125°C
RG=4.7 Ω
200
Er
50
100
0
0
0
5
10
15
20
25
Gate Resistance (ohms)
0
30
400
800
1200
1600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.07
0.06
0.05
0.9
IGBT
0.7
March, 2006
0.08
0.5
0.04
0.03
0.3
0.02
0.01
0
0.00001
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT300U170D4G – Rev 1
Thermal Impedance (°C/W)
0.09
APTGT300U170D4G
Forward Characteristic of diode
600
VCE =900V
D=50%
RG=4.7 Ω
TJ =125°C
TC=75°C
ZVS
20
15
10
500
T J=25°C
400
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
25
ZCS
5
T J=125°C
100
0
0
60
T J=125°C
200
hard
switching
0
300
120
180 240
IC (A)
300
360
0
420
0.5
1
1.5
V F (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.14
0.12
0.9
0.1
0.7
0.08
Diode
0.5
0.06
0.04
0.02
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT300U170D4G – Rev 1
March, 2006
rectangular Pulse Duration (Seconds)