ADPOW APTGT35H120T3

APTGT35H120T3
Full - Bridge
VCES = 1200V
IC = 35A @ Tc = 80°C
®
Trench IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
CR3
19
Q2
22
7
23
8
CR2
26
Q3
11
10
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Q4
CR4
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operation Area
TC = 25°C
Max ratings
1200
55
35
70
±20
208
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
September, 2004
CR1
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT35H120T3 – Rev 0
Q1
18
APTGT35H120T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
BVCES
ICES
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
1200
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, IC = 1.5mA
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 35A
Tj = 125°C
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 35A
R G = 27Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 35A
R G = 27Ω
Min
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Tf
Eon
Eoff
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
5.0
Typ
1.7
2.0
5.8
Typ
2.5
0.15
90
30
420
Max
5
2.1
Unit
V
mA
V
6.5
400
V
nA
Max
Unit
nF
ns
70
90
50
ns
520
90
3.5
4.1
mJ
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
VRRM
Test Conditions
Min
Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
IF(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
Diode Forward Voltage
IF = 30A
IF = 60A
IF = 30A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
1200
Maximum Peak Repetitive Reverse Voltage
IRM
VF
Typ
IF = 30A
VR = 800V
di/dt =200A/µs
V
250
500
Tj = 125°C
30
2.0
2.3
1.8
Tj = 25°C
370
Tj = 125°C
Tj = 25°C
500
660
Tj = 125°C
3450
APT website – http://www.advancedpower.com
Unit
µA
A
2.5
V
ns
September, 2004
Symbol Characteristic
nC
2-5
APTGT35H120T3 – Rev 0
Reverse diode ratings and characteristics
APTGT35H120T3
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.6
1.2
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
68
4080

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
APT website – http://www.advancedpower.com
3-5
APTGT35H120T3 – Rev 0
28
17
1
September, 2004
Package outline
APTGT35H120T3
Typical Performance Curve
Output Characteristics (V GE=15V)
Output Characteristics
70
80
70
VGE =17V
50
50
T J=125°C
IC (A)
IC (A)
60
T J = 125°C
60
TJ =25°C
40
30
VGE=15V
40
30
V GE =9V
20
20
10
10
0
0
0
0.5
1
1.5
2
V CE (V)
2.5
3
0
3.5
8
T J=25°C
60
6
T J=125°C
40
30
5
10
1
Eoff
Eon
0
0
5
6
7
8
9
VGE (V)
10
11
0
12
10
20
30
40
50
60
70
80
IC (A)
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
80
VCE = 600V
VGE =15V
IC = 35A
T J = 125°C
70
Eon
60
5
IC (A)
6
4
3
2
7
3
4
20
8
2
VCE (V)
V CE = 600V
V GE = 15V
RG = 27Ω
T J = 125°C
7
E (mJ)
IC (A)
50
1
Energy losses vs Collector Current
Transfert Characteristics
70
E (mJ)
V GE =13V
Eoff
50
40
30
4
VGE=15V
T J=125°C
RG=27Ω
20
3
10
2
0
25
45
65
85
Gate Resistance (ohms)
105
0
400
800
VCE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.5
0.9
September, 2004
0.6
0.7
0.4
0.3
0.2
0.1
0
0.00001
0.5
0.3
0.1
Single Pulse
0.05
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
1
10
4-5
APTGT35H120T3 – Rev 0
Thermal Impedance (°C/W)
0.7
APTGT35H120T3
Forward Characteristic of diode
80
V CE=600V
D=50%
RG =27Ω
TJ =125°C
TC=75°C
60
ZVS
40
70
60
50
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
80
40
30
ZCS
20
20
hard
switching
TJ=125°C
TJ=25°C
10
0
0
0
10
20
30
IC (A)
40
50
0
60
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
1
Diode
0.9
0.7
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT35H120T3 – Rev 0
September, 2004
rectangular Pulse Duration (Seconds)