APTGT50DDA120T3 Dual Boost chopper Trench IGBT® Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 22 7 23 8 Q1 Q2 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability. Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 125°C Max ratings 1200 75 50 100 ±20 270 100A @ 1150V Unit V September, 2004 CR2 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT50DDA120T3 – Rev 0, 13 14 CR1 VCES = 1200V IC = 50A @ Tc = 80°C APTGT50DDA120T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Tf Eon Eoff Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Test Conditions VGE = 0V, IC = 2mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min 1200 Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A R G = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A R G = 18Ω Min 1.4 5.0 Typ 1.7 2.0 5.8 Typ 3600 160 90 30 420 70 Max 5 2.1 Unit V mA V 6.5 400 V nA Max Unit pF ns 90 50 520 90 5 5.5 ns mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 VRRM Test Conditions Min IRM Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C Diode Forward Voltage IF = 60A IF = 120A IF = 60A trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 1200 Maximum Peak Repetitive Reverse Voltage Tj = 25°C Tj = 125°C VF Typ IF = 60A VR = 800V di/dt =200A/µs V 250 500 Tj = 125°C 60 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C Tj = 25°C 470 1200 Tj = 125°C 4000 APT website – http://www.advancedpower.com Unit µA A 2.5 V September, 2004 Symbol Characteristic ns nC 2-5 APTGT50DDA120T3 – Rev 0, Diode ratings and characteristics APTGT50DDA120T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = R 25 Max Unit kΩ K Min Typ Max 0.45 0.9 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 68 4080 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 °C/W V 150 125 100 4.7 110 °C N.m g 12 APT website – http://www.advancedpower.com 3-5 APTGT50DDA120T3 – Rev 0, 28 17 1 September, 2004 Package outline APTGT50DDA120T3 Typical Performance Curve Output Characteristics (VGE=15V) 100 Output Characteristics 100 T J = 125°C TJ=25°C 80 80 V GE=17V VGE=13V 60 IC (A) IC (A) T J=125°C 40 40 20 20 0 VGE=9V 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 0 3.5 12 T J=25°C 80 2 V CE (V) 3 4 V CE = 600V V GE = 15V RG = 18Ω T J = 125°C 10 T J=125°C 8 E (mJ) 60 40 Eoff 6 Eon 4 20 2 0 0 5 6 7 8 9 VGE (V) 10 11 10 12 10 70 90 110 Reverse Safe Operating Area Eon 100 80 IC (A) 9 50 120 VCE = 600V VGE =15V IC = 50A TJ = 125°C 11 30 IC (A) Switching Energy Losses vs Gate Resistance 12 E (mJ) 1 Energy losses vs Collector Current Transfert Characteristics 100 IC (A) VGE=15V 60 8 7 40 Eoff 6 60 V GE=15V T J=125°C RG=18Ω 20 5 4 0 0 20 40 60 Gate Resistance (ohms) 80 0 400 800 V CE (V) 1200 1600 September, 2004 IGBT Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT50DDA120T3 – Rev 0, Thermal Impedance (°C/W) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 APTGT50DDA120T3 Forward Characteristic of diode 160 VC E=600V D=50% RG =18Ω TJ=125°C TC=75°C 60 40 ZVS 20 140 120 100 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 TJ=125°C 80 60 ZCS TJ =25°C 40 hard switching 20 0 0 0 10 20 30 IC (A) 40 50 0 60 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 1 0.8 Diode 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT50DDA120T3 – Rev 0, September, 2004 rectangular Pulse Duration (Seconds)