APTGT75H120T Full - Bridge Fast Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q3 Q1 VCES = 1200V IC = 75A @ Tc = 80°C G3 G1 E3 OUT2 Q4 G2 G4 E2 E4 NTC1 NTC2 0/VBU S G3 G4 E3 E4 VBUS OUT2 OUT1 0/VBUS E1 E2 NTC2 G1 G2 NTC1 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 110 75 175 ±20 357 Tj = 125°C 150A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A May, 2005 Q2 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT75H120T – Rev 0 OUT1 E1 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring APTGT75H120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Tf Eon Eoff Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 75A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω Test Conditions Typ 1.7 2.0 5.8 Typ 5345 280 240 280 40 450 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit pF ns 75 290 45 ns 550 90 7 8 Min Typ mJ Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 75A trr Reverse Recovery Time IF = 75A VR = 600V Qrr Reverse Recovery Charge di/dt =2000A/µs Unit V Tj = 25°C Tj = 125°C 350 600 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 75 1.6 1.6 170 Tj = 125°C Tj = 25°C 280 7 Tj = 125°C 14 µA A 2.1 V ns µC May, 2005 IRM V APT website – http://www.advancedpower.com 2-5 APTGT75H120T – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT75H120T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.35 0.58 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 1.5 °C/W V 150 125 125 4.7 160 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT75H120T – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT75H120T Typical Performance Curve Output Characteristics (VGE =15V) 150 Output Characteristics 150 T J = 125°C 125 T J=25°C VGE =17V T J=125°C 75 VGE =15V 75 50 50 25 25 0 VGE=9V 0 0 1 2 V CE (V) 3 0 4 16 TJ =25°C 125 E (mJ) IC (A) 12 75 50 2 VCE (V) 3 4 VCE = 600V VGE = 15V RG = 4.7Ω TJ = 125°C 14 TJ =125°C 100 1 Energy losses vs Collector Current Transfert Characteristics 150 T J=125°C 10 Eoff Eon 8 Er 6 4 25 2 0 0 5 6 7 8 9 10 11 0 12 25 50 Switching Energy Losses vs Gate Resistance VCE = 600V VGE =15V IC = 75A TJ = 125°C 14 12 10 100 125 150 Reverse Bias Safe Operating Area 175 Eon 150 125 Eoff IC (A) 16 75 IC (A) V GE (V) E (mJ) VGE=13V 100 100 IC (A) IC (A) 125 8 Er 6 100 75 4 50 2 25 0 VGE =15V TJ=125°C RG=4.7Ω 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 0 400 800 V CE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 0.25 IGBT 0.9 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0 0.00001 May, 2005 0.35 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT75H120T – Rev 0 Thermal Impedance (°C/W) 0.4 APTGT75H120T Forward Characteristic of diode 150 VCE =600V D=50% RG=4.7Ω T J=125°C 50 ZCS 40 100 T c=75°C 30 T J=25°C 125 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZVS T J=125°C 75 50 20 Hard switching 10 TJ =125°C 25 TJ =25°C 0 0 0 20 40 60 IC (A) 80 100 120 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 Diode 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT75H120T – Rev 0 May, 2005 rectangular Pulse Duration (Seconds)