APTGT75TA120P Triple phase leg Trench IGBT® Power Module VBUS3 G1 G3 G5 E1 E3 U G2 E2 0/VBUS1 VBUS 1 U E5 V G6 E4 E6 0/VBUS2 0/VBUS3 VBUS 2 E1 W G4 G1 0/VBUS 1 E3 G5 0/VBUS 3 E5 E2 E4 E6 G2 G4 G6 V W Absolute maximum ratings Symbol VCES Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge VBUS 3 G3 0/VBUS 2 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Operating Area TC = 25°C Max ratings 1200 100 75 175 ±20 350 Tj = 125°C 150A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V September, 2004 VBUS2 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT75TA120P – Rev 0 VBUS1 VCES = 1200V IC = 75A @ Tc = 80°C APTGT75TA120P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min BVCES ICES Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current 1200 VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, IC = 5mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y 1.4 Typ 1.7 2.0 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω Typ 5340 280 240 260 30 420 Max 5 2.1 Unit V mA V 6.5 500 V nA Max Unit pF ns 70 285 50 520 ns 90 7 8.1 mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 IRM Maximum Reverse Leakage Current VF Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VR=1200V IF = 75A VGE = 0V IF = 75A VR = 600V di/dt =825A/µs IF = 75A VR = 600V di/dt =825A/µs Min 1200 Typ Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 1.6 1.6 Tj = 25°C 3 Tj = 125°C 6 Tj = 25°C 7.6 Tj = 125°C 13.7 APT website – http://www.advancedpower.com Max 250 500 2.1 Unit V µA V mJ September, 2004 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage µC 2-5 APTGT75TA120P – Rev 0 Reverse diode ratings and characteristics APTGT75TA120P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.35 0.58 Unit °C/W V 150 125 100 5 250 °C N.m g Package outline APT website – http://www.advancedpower.com 3-5 APTGT75TA120P – Rev 0 September, 2004 5 places (3:1) APTGT75TA120P Typical Performance Curve Output Characteristics (VGE=15V) 150 Output Characteristics 150 TJ = 125°C 125 T J=25°C 100 75 VGE =15V 75 50 50 25 25 V GE=9V 0 0 1 2 VCE (V) 3 0 4 1 17.5 T J=25°C 125 3 4 VCE = 600V VGE = 15V RG = 4.7Ω TJ = 125°C 15 12.5 T J=125°C E (mJ) 100 2 V CE (V) Energy losses vs Collector Current Transfert Characteristics 150 75 10 Eoff Eon 7.5 50 5 25 2.5 Er 0 0 5 6 7 8 9 VGE (V) 10 11 0 12 VCE = 600V VGE =15V IC = 75A TJ = 125°C 14 12 50 75 100 125 150 Reverse Safe Operating Area 175 Eon 150 125 Eoff IC (A) 10 25 IC (A) Switching Energy Losses vs Gate Resistance 16 E (mJ) V GE=13V 100 0 IC (A) VGE =17V TJ=125°C IC (A) IC (A) 125 8 6 Er 100 75 4 50 2 25 0 V GE=15V T J=125°C RG=4.7Ω 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 0 400 800 V CE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT 0.9 September, 2004 0.35 0.3 0.25 0.2 0.15 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT75TA120P – Rev 0 Thermal Impedance (°C/W) 0.4 APTGT75TA120P Forward Characteristic of diode 150 VCE=600V D=50% RG=4.7Ω TJ =125°C 50 40 125 100 Tc=75°C 30 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZVS ZCS 20 50 Hard switching 10 75 TJ=125°C 25 TJ=25°C 0 0 0 20 40 60 IC (A) 80 100 0 120 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.4 Diode 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT75TA120P – Rev 0 September, 2004 rectangular Pulse Duration (Seconds)