ADPOW APTGT75TDU120P

APTGT75TDU120P
Triple Dual Common Source
Trench IGBT® Power Module
G3
E1
G5
E5
E3
E3/E4
E1/E2
E5/E6
E2
E4
E6
G2
G4
G6
C2
C4
C1
E1/E2
C2
C6
C3
G3
E1
E3
E3/E4
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
C5
G1
G5
E5/E6
E5
E2
E4
E6
G2
G4
G6
C4
C6
Absolute maximum ratings
Symbol
VCES
Features
•
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Operating Area
TC = 25°C
Max ratings
1200
100
75
175
±20
350
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
September, 2004
G1
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
C5
C3
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT75TDU120P – Rev 0
C1
VCES = 1200V
IC = 75A @ Tc = 80°C
APTGT75TDU120P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
BVCES
ICES
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
1200
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, IC = 5mA
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 75A
Tj = 125°C
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
1.4
Typ
1.7
2.0
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
R G = 4.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
R G = 4.7Ω
Typ
5340
280
240
260
30
420
Max
5
2.1
Unit
V
mA
V
6.5
500
V
nA
Max
Unit
pF
ns
70
285
50
520
ns
90
7
8.1
mJ
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
IRM
Maximum Reverse Leakage Current
VF
Diode Forward Voltage
Er
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Test Conditions
VR=1200V
IF = 75A
VGE = 0V
IF = 75A
VR = 600V
di/dt =825A/µs
IF = 75A
VR = 600V
di/dt =825A/µs
Min
1200
Typ
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.6
1.6
Tj = 25°C
3
Tj = 125°C
6
Tj = 25°C
7.6
Tj = 125°C
13.7
APT website – http://www.advancedpower.com
Max
250
500
2.1
Unit
V
µA
V
mJ
September, 2004
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
µC
2-5
APTGT75TDU120P – Rev 0
Reverse diode ratings and characteristics
APTGT75TDU120P
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
2500
-40
-40
-40
3
Typ
Max
0.35
0.58
Unit
°C/W
V
150
125
100
5
250
°C
N.m
g
Package outline
APT website – http://www.advancedpower.com
3-5
APTGT75TDU120P – Rev 0
September, 2004
5 places (3:1)
APTGT75TDU120P
Typical Performance Curve
Output Characteristics (VGE=15V)
150
Output Characteristics
150
TJ = 125°C
125
T J=25°C
100
75
VGE =15V
75
50
50
25
25
V GE=9V
0
0
1
2
VCE (V)
3
0
4
1
17.5
T J=25°C
125
3
4
VCE = 600V
VGE = 15V
RG = 4.7Ω
TJ = 125°C
15
12.5
T J=125°C
E (mJ)
100
2
V CE (V)
Energy losses vs Collector Current
Transfert Characteristics
150
75
10
Eoff
Eon
7.5
50
5
25
2.5
Er
0
0
5
6
7
8
9
VGE (V)
10
11
0
12
VCE = 600V
VGE =15V
IC = 75A
TJ = 125°C
14
12
50
75
100
125
150
Reverse Safe Operating Area
175
Eon
150
125
Eoff
IC (A)
10
25
IC (A)
Switching Energy Losses vs Gate Resistance
16
E (mJ)
V GE=13V
100
0
IC (A)
VGE =17V
TJ=125°C
IC (A)
IC (A)
125
8
6
Er
100
75
4
50
2
25
0
V GE=15V
T J=125°C
RG=4.7Ω
0
0
4
8
12 16 20 24
Gate Resistance (ohms)
28
32
0
400
800
V CE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
IGBT
September, 2004
0.35
0.9
0.3
0.25
0.2
0.15
0.7
0.5
0.3
0.1
0.05
0
0.00001
0.1
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT75TDU120P – Rev 0
Thermal Impedance (°C/W)
0.4
APTGT75TDU120P
Forward Characteristic of diode
150
VCE=600V
D=50%
RG=4.7Ω
TJ =125°C
50
40
125
100
Tc=75°C
30
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
ZVS
ZCS
20
50
Hard
switching
10
75
TJ=125°C
25
TJ=25°C
0
0
0
20
40
60
IC (A)
80
100
0
120
0.4
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.6
0.9
0.5
0.4
Diode
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT75TDU120P – Rev 0
September, 2004
rectangular Pulse Duration (Seconds)