APTM100A13D Phase leg with Series diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • • • • 0/VBUS OUT Benefits • • • • S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 65 49 240 ±30 130 1250 24 30 1300 Unit V A V mΩ W A July, 2004 VBUS S1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM100A13D – Rev 0 G1 Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTM100A13D All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Test Conditions VGS = 0V, ID = 1.5mA Min 1000 VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 32.5A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Typ 3 Min VGS = 10V VBus = 500V ID = 65A Typ 15.2 2.6 0.44 562 Max 600 2 130 5 ±450 Unit V µA mA mΩ V nA Max Unit nF nC 75 363 Inductive switching @ 125°C VGS = 15V VBus =667V ID = 65A R G = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5Ω 9 9 50 24 ns 2.13 mJ 0.46 4.5 mJ 0.57 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. VF Characteristic Test Conditions Min 1000 Maximum Repetitive Reverse Voltage Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1000V Tj = 125°C 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 670V di/dt = 400A/µs IF = 120A VR = 670V di/dt = 400A/µs T c = 100 °C Typ 1 Tj = 125°C 120 1.9 2.2 1.7 Tj = 25°C 280 Tj = 125°C 350 Tj = 25°C 1.5 Tj = 125°C 7.2 APT website – http://www.advancedpower.com Max Unit V mA A 2.5 V July, 2004 Symbol VRRM IRM IF(A V) ns µC 2-6 APTM100A13D – Rev 0 Series diode ratings and characteristics APTM100A13D Thermal and package characteristics Symbol Characteristic Min Transistor Series diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.10 0.46 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-6 APTM100A13D – Rev 0 July, 2004 Package outline APTM100A13D Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 360 7V 6.5V VGS=15&10V 150 120 6V 90 60 5.5V 30 5V ID, Drain Current (A) VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 300 240 180 120 TJ=25°C 60 0 TJ=125°C 0 4 8 12 16 20 24 28 0 VGS=10V 1.2 VGS=20V 1.1 3 4 5 6 7 8 9 10 70 ID, DC Drain Current (A) Normalized to VGS =10V @ 32.5A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1 0.9 0.8 60 50 40 30 20 10 0 0 30 60 90 120 ID, Drain Current (A) 150 180 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2004 RDS(on) Drain to Source ON Resistance TJ =-55°C 0 APT website – http://www.advancedpower.com 4-6 APTM100A13D – Rev 0 I D, Drain Current (A) 180 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=32.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms 10 10ms Single pulse TJ =150°C 100ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=65A TJ=25°C 12 10 V DS =200V V DS =500V 8 VDS=800V 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC) July, 2004 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5-6 APTM100A13D – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100A13D APTM100A13D Delay Times vs Current t d(off) 50 40 40 tr and tf (ns) VDS=667V RG=0.5Ω T J=125°C L=100µH 30 20 t d(on) 30 20 10 10 0 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 I D, Drain Current (A) ID, Drain Current (A) 90 100 Switching Energy vs Gate Resistance Switching Energy vs Current 6 VDS=667V RG=0.5Ω T J=125°C L=100µH 7 6 5 Switching Energy (mJ) 8 Eon 4 3 2 Eoff 1 0 5 Eon 4 V DS=667V ID=65A T J=125°C L=100µH 3 2 Eoff 1 0 20 30 40 50 60 70 80 90 100 0 1 ID, Drain Current (A) 2 3 4 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZCS 200 Hard switching 150 I DR, Reverse Drain Current (A) 300 VDS=667V D=50% RG=0.5Ω T J=125°C T C=75°C 100 50 0 10 20 30 40 50 ID, Drain Current (A) 60 TJ =150°C 100 TJ =25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2004 Switching Energy (mJ) tr 0 20 Frequency (kHz) tf VDS=667V RG=0.5Ω T J=125°C L=100µH APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM100A13D – Rev 0 td(on) and td(off) (ns) Rise and Fall times vs Current 50 60