APTM100U13S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application CR1 D S • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features Q1 • G • • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 65 48 260 ±30 145 1250 17 50 2500 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–5 APTM100U13S – Rev 2 July, 2005 • • • APTM100U13S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 32.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 500V ID = 65A Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, R G = 1.5Ω Eon Turn-on Switching Energy Inductive switching @ 125°C Eoff Turn-off Switching Energy RthJC Junction to Case Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF(A V) Maximum Average Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Test Conditions VR=200V 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs mΩ V nA Unit 116 180 nC 660 1000 nF ns 125 40 2.6 1.6 4.2 µJ µJ 1.82 Typ 0.1 °C/W Max Unit V 350 600 Tj = 125°C Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 µA A 1.15 V ns nC 0.46 APT website – http://www.advancedpower.com µA Max 31.6 3.32 1.72 2000 120 1.1 1.4 0.9 Junction to Case Unit Typ 26.4 2.38 1.16 1340 20 Min 200 Tj = 25°C Tj = 125°C Tc = 80°C Max 100 400 145 4 ±200 20 VGS = 15V, VBus = 667V ID = 65A, R G = 1.5Ω Series diode ratings and characteristics VF 130 2 Inductive Switching @ 25°C VGS = 15V VBus = 667V ID = 65A R G = 1.5Ω Rise Time Typ °C/W 2–5 APTM100U13S – Rev 2 July, 2005 Symbol Characteristic APTM100U13S Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Test Conditions IRM Maximum Reverse Leakage Current VR=1000V IF(A V) Maximum Average Forward Current 50% duty cycle Diode Forward Voltage IF = 100A IF = 200A IF = 100A VF trr Reverse Recovery Time IF = 100A VR = 667V Qrr Reverse Recovery Charge di/dt = 200A/µs RthJC Min 1000 Tj = 25°C Tj = 125°C Tc = 40°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 300 360 800 Tj = 125°C 4050 Junction to Case Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M4 M6 Max 250 500 100 1.9 2.2 1.7 Thermal and package characteristics Symbol VISOL TJ TSTG TC Typ Min 2500 -40 -40 -40 3 Typ Unit V µA A 2.5 V ns nC 0.6 °C/W Max Unit V 150 125 100 1.2 5 400 °C N.m g APT website – http://www.advancedpower.com 3–5 APTM100U13S – Rev 2 July, 2005 J3 Package outline (dimensions in mm) APTM100U13S Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics V GS =15V 150 ID, Drain Current (A) ID, Drain Current (A) 10 200 200 5V 100 4.5V 50 4V VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 150 100 50 T J=125°C TJ =-55°C TJ =25°C 0 0 0 5 10 15 VDS , Drain to Source Voltage (V) 20 0 RDS(on) vs Drain Current 1.30 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 70 Normalized to VGS =10V @ 32.5A ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 V GS =10V 1.20 1.10 VGS =20V 1.00 0.90 60 50 40 30 20 10 0 0 50 100 150 ID, Drain Current (A) 200 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–5 APTM100U13S – Rev 2 July, 2005 Thermal Impedance (°C/W) 0.12 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 RDS(on), Drain to Source ON resistance (Normalized) APTM100U13S 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 100000 1.2 25 50 75 100 125 150 Capacitance vs Drain to Source Voltage Ciss 1.1 C, Capacitance (pF) VGS (TH), Threshold Voltage (Normalized) 0 T J, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 0.6 Gate Charge vs Gate to Source Voltage 18 16 14 IDR , Reverse Drain Current (A) ID=65A T J=25°C VDS=500V 12 VDS=200V 10 8 VDS=800V 6 4 2 0 10000 Coss 1000 Crss 100 0.01 0.1 1 10 100 VDS, Drain to Source Voltage (V) -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) ON resistance vs Temperature VGS=10V ID=32.5A 1000 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 0 500 1000 1500 Gate Charge (nC) 2000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VS D, Source to Drain Voltage (V) Operating Frequency vs Drain Current 250 ZVS ZCS 150 100 50 V DS=667V D=50% R G=1.5Ω T J=125°C T C=75°C Hard switching 0 10 20 30 40 50 ID, Drain Current (A) 60 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5–5 APTM100U13S – Rev 2 July, 2005 Frequency (kHz) 200