APTM100UM65D-AlN Single switch with Series diode MOSFET Power Module VDSS = 1000V RDSon = 65mΩ max @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 145 110 580 ±30 65 3250 30 50 3200 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100UM65D-AlN – Rev 0 July, 2004 S APTM100UM65D-AlN All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Test Conditions VGS = 0V, ID = 1mA Min 1000 VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 75A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Typ 3 Min VGS = 10V VBus = 500V ID = 145A Typ 28.5 5.08 0.9 1068 Max 400 2 65 5 ±400 Unit V µA mA mΩ V nA Max Unit nF 136 nC 692 VGS = 15V VBus = 500V ID = 145A R G = 0.75Ω 18 14 140 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75Ω 4.8 ns 55 mJ 2.9 8 mJ 3.9 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Symbol VRRM IRM IF(A V) VF Characteristic Test Conditions Min 1000 Maximum Repetitive Reverse Voltage Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1000V Tj = 125°C 50% duty cycle IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V di/dt = 800A/µs IF = 240A VR = 667V di/dt = 800A/µs T c = 100°C Typ 2 Tj = 125°C 240 1.9 2.2 1.7 Tj = 25°C 280 Tj = 125°C 350 Tj = 25°C 3 Tj = 125°C 14.4 APT website – http://www.advancedpower.com Max Unit V mA A 2.5 V ns µC 2–6 APTM100UM65D-AlN – Rev 0 July, 2004 Series diode ratings and characteristics APTM100UM65D-AlN Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Series diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To Heatsink Mounting torque For teminals Package Weight Typ Max 0.038 0.23 2500 M6 M5 -40 -40 -40 3 2 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM100UM65D-AlN – Rev 0 July, 2004 Package outline APTM100UM65D-AlN Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 0.1 0.05 0.005 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 360 VGS =15, 10V 7V 280 ID, Drain Current (A) 6.5V 240 200 6V 160 120 80 5.5V 40 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 TJ=25°C 160 80 TJ =125°C 5V 0 0 5 10 15 20 25 30 0 ID, DC Drain Current (A) Normalized to VGS =10V @ 72.5A 1.3 1.2 1.1 VGS=10V 1 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) RDS(on) Drain to Source ON Resistance TJ=-55°C 0 VGS=20V 0.9 0.8 120 80 40 0 0 80 160 240 ID, Drain Current (A) 320 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM100UM65D-AlN – Rev 0 July, 2004 I D, Drain Current (A) 320 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=72.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by R DSon 100 1ms 10 10ms Single pulse TJ=150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 14 ID=145A TJ=25°C 12 10 VDS=200V VDS=500V V DS =800V 8 6 4 2 0 0 300 APT website – http://www.advancedpower.com 600 900 1200 1500 Gate Charge (nC) 5–6 APTM100UM65D-AlN – Rev 0 July, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM65D-AlN APTM100UM65D-AlN Delay Times vs Current Rise and Fall times vs Current 100 160 V DS =670V RG =0.75Ω T J=125°C L=100µH 80 120 tr and tf (ns) V DS=670V RG =0.75Ω T J=125°C L=100µH 80 40 t d(on) 60 40 tr 20 0 0 50 94 138 182 226 270 50 94 I D, Drain Current (A) 10 Eon Switching Energy (mJ) Switching Energy (mJ) VDS=670V RG=0.75Ω TJ=125°C L=100µH 12 Eoff 8 6 4 2 0 V DS=670V ID=145A T J=125°C L=100µH 22 18 14 Eon 10 6 94 138 182 226 270 0 1 2 ID, Drain Current (A) 3 4 5 6 7 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 250 Frequency (kHz) Eoff 2 50 ZCS 200 50 270 26 14 100 138 182 226 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 16 150 tf VDS=670V D=50% RG=0.75Ω T J=125°C T C=75°C Hard switching 0 15 35 55 75 95 115 ID, Drain Current (A) 135 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM100UM65D-AlN – Rev 0 July, 2004 td(on) and td(off) (ns) t d(off)