APTM120A15F Phase leg MOSFET Power Module VDSS = 1200V RDSon = 150mΩ max @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1 Q2 • G2 0/VBUS • • • VBUS 0/VBUS OUT S1 Benefits • • • • S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 60 45 240 ±30 150 1250 22 50 3000 Unit V A V mΩ W A July, 2004 G1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120A15F– Rev 0 S2 Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTM120A15F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 1mA Min 1200 VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 30A VGS = VDS, ID = 10mA VGS = ±30V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Min VGS = 10V VBus = 600V ID = 60A VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Z trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 20.6 3.08 0.52 748 Unit V 400 2000 150 5 ±250 mΩ V nA Max Unit µA nF nC 480 20 15 45 3.96 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2Ω 6.26 Test Conditions ns 160 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2Ω mJ 2.74 mJ 3.43 Min Typ Tj = 25°C Max 60 45 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 60A IS = - 60A VR = 600V diS/dt = 400A/µs IS = - 60A VR = 600V diS/dt = 400A/µs Max 96 Source - Drain diode ratings and characteristics Symbol IS 3 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 60A R G = 1.2Ω Rise Time Typ Tj = 25°C 8 Tj = 125°C 28 Unit A V V/ns ns µC July, 2004 IDSS Characteristic Drain - Source Breakdown Voltage X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 60A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2–6 APTM120A15F– Rev 0 Symbol BVDSS APTM120A15F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.1 150 125 100 5 3.5 280 Unit °C/W V °C N.m g APT website – http://www.advancedpower.com 3–6 APTM120A15F– Rev 0 July, 2004 Package outline APTM120A15F Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 200 160 7V 6.5V 120 80 6V 40 5.5V 5 10 15 20 25 240 200 160 120 TJ=25°C 80 40 5V 0 0 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 VGS=20V 0.9 0.8 60 50 40 30 20 10 0 0 40 80 120 ID, Drain Current (A) 160 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2004 RDS(on) Drain to Source ON Resistance VGS=10V 1.1 1 3 70 Normalized to VGS =10V @ 30A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 APT website – http://www.advancedpower.com 4–6 APTM120A15F– Rev 0 I D, Drain Current (A) VGS =15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=30A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by RDS on 100 1ms 10ms 10 Single pulse TJ =150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 I D=60A TJ=25°C 12 10 V DS=240V VDS=600V 8 V DS =960V 6 4 2 0 0 160 320 480 640 800 960 Gate Charge (nC) July, 2004 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5–6 APTM120A15F– Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120A15F APTM120A15F Delay Times vs Current t d(off) VDS=800V RG=1.2Ω T J=125°C L=100µH 150 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 V DS=800V RG=1.2Ω T J=125°C L=100µH 90 60 40 tr 20 t d(on) 30 0 0 20 40 60 80 100 120 140 20 40 I D, Drain Current (A) 140 14 VDS=800V RG=1.2Ω TJ=125°C L=100µH 10 8 Eon Switching Energy (mJ) Switching Energy (mJ) 60 80 100 120 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 12 Eoff 6 4 2 0 20 40 60 80 100 120 12 10 V DS=800V ID=60A T J=125°C L=100µH Eoff 8 Eon 6 4 2 0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75 140 ID, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 200 Frequency (kHz) tf 150 ZCS V DS=800V D=50% R G=1.2Ω T J=125°C T C=75°C 100 50 ZVS Hard switching 0 15 25 35 45 ID, Drain Current (A) 55 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2004 5 100 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120A15F– Rev 0 APT reserves the right to change, without notice, the specifications and information contained herein