APTM120H57FT Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q3 Q1 VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = 25°C G3 O UT1 S3 O UT2 Q2 Q4 G2 G4 S2 S4 NT C1 NT C2 0/VBUS G3 G4 S3 S4 VBUS 0/VBUS OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 17 13 68 ±30 570 390 22 50 3000 Unit V A V mΩ W A July, 2004 S1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120H57FT– Rev 0 G1 APTM120H57FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 250µA Min 1200 VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Min VGS = 10V VBus = 600V ID = 17A VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Z trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 5155 770 130 187 Unit V 100 500 570 5 ±100 mΩ V nA Max Unit µA pF nC 120 20 15 45 990 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 17A, R G = 5Ω 1565 Test Conditions ns 160 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, R G = 5Ω µJ 685 µJ 857 Min Typ Tj = 25°C Max 17 13 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 17A IS = - 17A VR = 600V diS/dt = 100A/µs IS = - 17A VR = 600V diS/dt = 100A/µs Max 24 Source - Drain diode ratings and characteristics Symbol IS 3 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A R G = 5Ω Rise Time Typ Tj = 25°C 2 Tj = 125°C 7 Unit A V V/ns ns µC July, 2004 IDSS Characteristic Drain - Source Breakdown Voltage X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 17A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2–6 APTM120H57FT– Rev 0 Symbol BVDSS APTM120H57FT Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min R 25 1 1 exp B25 / 85 − T25 T Max 0.32 150 125 100 4.7 160 M5 Temperature sensor NTC RT = Typ Typ 68 4080 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature RT : Thermistor value at T APT website – http://www.advancedpower.com 3–6 APTM120H57FT– Rev 0 July, 2004 Package outline APTM120H57FT Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 50 40 7V 6.5V 30 20 6V 10 5.5V 5 10 15 20 25 60 50 40 30 TJ=25°C 20 10 5V 0 0 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 70 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 VGS=20V 0.9 0.8 16 12 8 4 0 0 10 20 30 ID, Drain Current (A) 40 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2004 RDS(on) Drain to Source ON Resistance VGS=10V 1.1 1 3 20 Normalized to VGS=10V @ 8.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS , Drain to Source Voltage (V) 1.4 TJ =-55°C 0 APT website – http://www.advancedpower.com 4–6 APTM120H57FT– Rev 0 I D, Drain Current (A) V GS=15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=8.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 limited by RDSon 1ms 10 10ms Single pulse TJ =150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 I D=17A TJ=25°C 12 V DS=240V 10 VDS=600V 8 V DS =960V 6 4 2 0 0 40 80 120 160 200 240 Gate Charge (nC) July, 2004 0 1200 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5–6 APTM120H57FT– Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120H57FT APTM120H57FT Delay Times vs Current t d(off) 160 140 VDS=800V RG=5Ω TJ=125°C L=100µH 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 V DS=800V RG =5Ω T J=125°C L=100µH 100 80 60 40 tr 20 td(on) 40 tf 20 0 0 5 10 15 20 25 30 35 5 10 I D, Drain Current (A) 35 4 V DS=800V RG=5Ω T J=125°C L=100µH 2.5 2 Eon Switching Energy (mJ) Switching Energy (mJ) 30 Switching Energy vs Gate Resistance Switching Energy vs Current 3 Eoff 1.5 1 0.5 0 VDS=800V ID=17A TJ=125°C L=100µH 3 Eoff 2 Eon 1 0 5 10 15 20 25 30 35 0 5 10 I D, Drain Current (A) 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 225 200 175 Frequency (kHz) 15 20 25 I D, Drain Current (A) 150 ZCS ZVS 125 100 VDS=800V D=50% RG=5Ω T J=125°C T C=75°C 75 50 25 Hard switching 0 6 8 10 12 14 ID, Drain Current (A) 16 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120H57FT– Rev 0 July, 2004 4 100