ADPOW APTM20DAM10T

APTM20DAM10T
Boost chopper
MOSFET Power Module
VBUS
NT C2
VBUS SENSE
CR1
OUT
Q2
G2
S2
0/VBU S
NT C1
G2
S2
VBUS
VBUS
SENSE
0/VBUS
OUT
OUT
S2
NTC2
G2
NTC1
VDSS = 200V
RDSon = 10mW max @ Tj = 25°C
ID = 175A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
175
131
700
±30
10
694
89
50
2500
Unit
V
A
V
mW
W
A
May, 2004
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM20DAM10T – Rev 2
Symbol
VDSS
APTM20DAM10T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
VGS = 0V, ID = 375µA
Min
200
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 10V, ID = 87.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Typ
Tj = 25°C
Tj = 125°C
3
Max
Unit
V
150
750
10
5
±150
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 100V
ID = 150A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
nF
nC
86
94
28
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 150A
RG = 2.5W
Rise Time
Typ
13.7
4.36
0.19
224
56
ns
81
99
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω
926
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω
1216
µJ
910
µJ
1062
Diode ratings and characteristics
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Tj = 125°C
Typ
120
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
120
Tj = 125°C
500
Tc = 85°C
Max
Unit
A
1.15
V
ns
May, 2004
VF
Test Conditions
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 133V
di/dt = 400A/µs
IF = 120A
VR = 133V
di/dt = 400A/µs
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–6
APTM20DAM10T – Rev 2
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
APTM20DAM10T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
Transistor
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
2500
-40
-40
-40
Max
0.18
0.46
Unit
°C/W
V
150
125
100
4.7
160
M5
°C
N.m
g
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
Min
Typ
68
4080
Max
Unit
kW
K
R 25
é
æ 1
1 öù T: Thermistor temperature
- ÷÷ú RT: Thermistor value at T
exp ê B25 / 85 çç
è T25 T øû
ë
APT website – http://www.advancedpower.com
3–6
APTM20DAM10T – Rev 2
May, 2004
Package outline
APTM20DAM10T
Thermal Impedance (°C/W)
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.9
0.16
0.14
0.7
0.12
0.5
0.1
0.08
0.3
0.06
Single Pulse
0.04
0.1
0.02
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
9V
400
7.5V
300
7V
200
6.5V
6V
100
ID, Drain Current (A)
300
200
TJ=25°C
100
TJ=125°C
5.5V
0
0
5
10
15
20
25
2
VDS, Drain to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 87.5A
1.1
VGS=10V
1.05
1
VGS=20V
0.95
0.9
0
40
80
120 160 200
ID, Drain Current (A)
240
ID, DC Drain Current (A)
1.2
1.15
3
4
5
6
7
8
9
VGS, Gate to Source Voltage (V)
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
May, 2004
0
RDS(on) Drain to Source ON Resistance
T J=-55°C
4–6
APTM20DAM10T – Rev 2
ID, Drain Current (A)
VGS=15&10V
Transfert Characteristics
400
500
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
limited by
RDSon
100µs
100
1ms
10ms
10
0.7
DC line
Single pulse
TJ=150°C
0.6
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
VDS=40V
ID=150A
10
TJ=25°C
VDS=100V
8
VDS=160V
6
4
2
0
0
50
100
150
200
250
Gate Charge (nC)
May, 2004
0
1
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
VGS=10V
ID= 87.5A
1000
1.2
1.1
ON resistance vs Temperature
2.5
APT website – http://www.advancedpower.com
5–6
APTM20DAM10T – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20DAM10T
APTM20DAM10T
Rise and Fall times vs Current
90
160
80
140
td(off)
70
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
60
50
40
30
100
80
tr
60
20
10
0
0
50
100
150
200
250
300
0
50
ID, Drain Current (A)
Eon
Eoff
1
0.5
0
250
300
VDS=133V
ID=150A
TJ=125°C
L=100µH
2.5
Eoff
Eon
2
1.5
1
0
50
100
150
200
250
0
300
ID, Drain Current (A)
250
200
150
100
50
0
40
60 80 100 120 140 160
ID, Drain Current (A)
10
15
20
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM20DAM10T – Rev 2
May, 2004
20
IDR, Reverse Drain Current (A)
VDS=133V
D=50%
RG=2.5Ω
TJ=125°C
300
5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
350
Frequency (kHz)
200
3
Switching Energy (mJ)
Eon and Eoff (mJ)
1.5
150
Switching Energy vs Gate Resistance
Switching Energy vs Current
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
100
ID, Drain Current (A)
2.5
2
tf
40
td(on)
20
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
120
tr and tf (ns)
td(on) and td(off) (ns)
Delay Times vs Current