APTM50HM38F Full - Bridge MOSFET Power Module VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application · · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · · · OUT1 G1 VBUS G2 0/VBUS S1 S2 S3 S4 G3 G4 OUT2 · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 90 67 360 ±30 38 694 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50HM38F– Rev 1 May, 2004 Symbol VDSS APTM50HM38F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 375µA Min 500 Typ Tj = 25°C Tj = 125°C Zero Gate Voltage Drain Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 3 Max Unit V 375 1500 38 5 ±150 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 90A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v pF nC 66 130 18 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A RG = 2W Rise Time Typ 11200 2400 180 246 35 ns 87 77 Inductive switching @ 25°C VGS = 15V, VBus = 330V ID = 90A, RG = 2Ω 1510 Inductive switching @ 125°C VGS = 15V, VBus = 330V ID = 90A, RG = 2Ω 2482 µJ 1452 µJ 1692 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 90A IS = - 90A VR = 250V diS/dt = 200A/µs IS = - 90A VR = 250V diS/dt = 200A/µs Tj = 25°C 233 Tj = 125°C 499 Tj = 25°C 3.8 Tj = 125°C 11.4 Max 90 67 1.3 15 Unit A V V/ns ns µC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 90A di/dt £ 700A/µs APT website – http://www.advancedpower.com 2–6 APTM50HM38F– Rev 1 May, 2004 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w APTM50HM38F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.18 150 125 100 5 3.5 280 Unit °C/W V °C N.m g APT website – http://www.advancedpower.com 3–6 APTM50HM38F– Rev 1 May, 2004 Package outline APTM50HM38F Typical Performance Curve 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 0.04 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 300 8V VGS=10&15V 250 ID, Drain Current (A) ID, Drain Current (A) 10 250 350 7.5V 200 7V 150 6.5V 100 6V 50 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 TJ=125°C 5.5V 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 45A 1.15 VGS=10V 1.10 1.05 TJ=-55°C 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 100 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 VGS=20V 1.00 0.95 0.90 0.85 0.80 80 60 40 20 0 0 50 100 150 ID, Drain Current (A) 200 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–6 APTM50HM38F– Rev 1 May, 2004 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=45A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 0.6 limited by RDSon 100 limited by RDSon 100µs 10 1ms 10ms Single pulse TJ=150°C 100ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=90A 12 T =25°C J V =250V CE 10 VCE=400V 8 6 4 2 0 0 40 APT website – http://www.advancedpower.com 80 120 160 200 240 280 320 Gate Charge (nC) 5–6 APTM50HM38F– Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM38F APTM50HM38F Delay Times vs Current Rise and Fall times vs Current 120 td(off) 80 40 VDS=333V RG=2Ω TJ=125°C L=100µH td(on) 20 80 60 40 tr 20 0 0 20 40 60 80 100 120 140 20 40 60 ID, Drain Current (A) VDS=333V RG=2Ω TJ=125°C L=100µH 4 3 120 140 Switching Energy vs Gate Resistance Eon Eoff 2 100 8 Switching Energy (mJ) Switching Energy (mJ) 5 80 ID, Drain Current (A) Switching Energy vs Current 1 VDS=333V ID=90A TJ=125°C L=100µH 7 6 5 Eoff 4 Eon 3 2 1 0 0 20 40 60 80 100 120 0 140 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=333V D=50% RG=2Ω TJ=125°C 350 300 250 200 150 100 50 0 20 30 40 50 60 ID, Drain Current (A) 5 10 15 20 25 Gate Resistance (Ohms) 400 Frequency (kHz) tf 70 80 1000 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50HM38F– Rev 1 May, 2004 60 VDS=333V RG=2Ω TJ=125°C L=100µH 100 tr and tf (ns) td(on) and td(off) (ns) 100