APTM50UM25S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 500V RDSon = 25mΩ max @ Tj = 25°C ID = 149A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G • • • • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 149 110 550 ±30 25 1250 41 50 1600 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50UM25S – Rev 1 June, 2004 • • • APTM50UM25S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Test Conditions VGS = 0V, ID = 500µA Min 500 VGS = 0V,VDS= 500V Tj = 25°C VGS = 0V,VDS= 400V Tj = 125°C VGS = 10V, ID = 74.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 149A Turn-off Delay Time Fall Time Symbol Characteristic IF(A V) Maximum Average Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt = 200A/µs IF = 100A VR = 400V di/dt = 200A/µs Unit V 400 1000 25 5 ±200 mΩ V nA Max Unit µA nF nC 196 15 21 52 Min Tj = 125°C Typ 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Min Tj = 125°C Typ 100 1.6 1.9 1.4 Tj = 25°C 180 Tj = 125°C 220 Tj = 25°C 390 Tj = 125°C 1450 Tc = 80°C APT website – http://www.advancedpower.com ns 73 Tc = 85°C Parallel diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current Typ 17.5 3.6 0.24 364 Max 96 Series diode ratings and characteristics VF 3 Inductive Switching @ 125°C VGS = 15V VBus = 333V ID = 149A R G = 1.2Ω Rise Time Typ Max Unit A 1.15 V ns nC Max Unit A 1.8 V ns nC 2–6 APTM50UM25S – Rev 1 June, 2004 Symbol Characteristic BVDSS Drain - Source Breakdown Voltage APTM50UM25S Thermal and package characteristics Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M4 M6 2500 -40 -40 -40 3 Typ Max 0.1 0.46 0.6 Unit °C/W V 150 125 100 1.2 5 400 °C N.m g Mounting holes: 4x∅6.5 mm APT website – http://www.advancedpower.com 3–6 APTM50UM25S – Rev 1 June, 2004 Package outline APTM50UM25S Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 7.5V 8V VGS =10&15V 400 7V 320 240 6.5V 160 6V 80 5.5V VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 160 TJ =25°C 80 TJ =125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 74.5A 1.15 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 VGS=10V 1.10 VGS=20V 1.05 1 VGS, Gate to Source Voltage (V) I D, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 10 480 I D, Drain Current (A) I D, Drain Current (A) 480 1 1.00 0.95 0.90 120 80 40 0 0 80 160 240 ID, Drain Current (A) 320 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–6 APTM50UM25S – Rev 1 June, 2004 Thermal Impedance (°C/W) 0.12 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=74.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100 limited by RDSon 1ms 10 10ms Single pulse TJ =150°C 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 100µs limited by RDSon 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=149A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 80 APT website – http://www.advancedpower.com 160 240 320 400 480 560 Gate Charge (nC) 5–6 APTM50UM25S – Rev 1 June, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50UM25S APTM50UM25S Delay Times vs Current Rise and Fall times vs Current 100 td(off) 60 V DS =333V RG =1.2Ω T J=125°C L=100µH 40 td(on) 20 tf 40 tr 0 40 80 120 160 200 240 ID, Drain Current (A) 280 40 VDS=333V RG=1.2Ω TJ=125°C L=100µH 6 4.8 160 200 240 280 Switching Energy vs Gate Resistance Eon 3.6 120 10 Switching Energy (mJ) 7.2 80 ID, Drain Current (A) Switching Energy vs Current Eoff 2.4 1.2 V DS =333V ID=149A T J=125°C L=100µH 8 Eoff 6 Eon 4 2 0 40 80 120 160 200 0 240 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=333V D=50% RG=1.2Ω TJ=125°C 350 300 250 200 150 100 50 0 20 40 60 80 100 ID, Drain Current (A) 5 7.5 10 12.5 Gate Resistance (Ohms) 450 400 2.5 120 140 1000 Source to Drain Diode Forward Voltage TJ =150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50UM25S – Rev 1 June, 2004 Switching Energy (mJ) 60 20 0 Frequency (kHz) VDS=333V RG=1.2Ω TJ=125°C L=100µH 80 t r and tf (ns) t d(on) and td(off) (ns) 80