ADPOW ARF466A

ARF466A
ARF466B
D
G
S
TO-264
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
200V 300W
45MHz
The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized
for both linear and high efficiency classes of operation.
• Specified 150 Volt, 40.68 MHz Characteristics:
•
Output Power = 300 Watts.
•
Gain = 16dB (Class AB)
•
Efficiency = 75% (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF466A_B
VDSS
Drain-Source Voltage
1000
VDGO
Drain-Gate Voltage
1000
ID
Continuous Drain Current @ TC = 25°C
UNIT
Volts
13
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
357
Watts
Junction to Case
0.35
°C/W
RθJC
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1000
RDS(ON)
Drain-Source On-State Resistance
IDSS
1
MAX
0.90
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
g fs
Forward Transconductance (VDS = 25V, ID = 6.5A)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3.3
ohms
µA
±100
nA
9
mhos
4
Volts
7
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
(VGS = 10V, ID = 6.5A)
IGSS
VGS(TH)
TYP
8-2005
MIN
050-4925 Rev C
Characteristic / Test Conditions
Symbol
DYNAMIC CHARACTERISTICS
Symbol
ARF466A_B
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
Turn-off Delay Time
Fall Time
UNIT
MAX
2000
VGS = 0V
Rise Time
TYP
VDS = 150V
165
f = 1 MHz
75
VGS = 15V
12
VDD = 500 V
10
ID = 13A @ 25°C
43
RG = 1.6Ω
10
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 40.68 MHz
14
16
dB
70
75
%
VGS = 2.5V
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 10:1
VDD = 150V
Pout = 300W
MAX
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
10,000
30
Class C
VDD = 150V
25
Pout = 150W
CAPACITANCE (pf)
Ciss
GAIN (dB)
20
15
10
1000
500
Coss
100
Crss
50
5
0
30
45
60
75
90
105
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
10
.1
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
120
52
050-4925 Rev C
ID, DRAIN CURRENT (AMPERES)
8-2005
18
16
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
14
12
10
8
6
4
2
0
TJ = -55°C
TJ = +25°C
TJ = +125°C
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
20
OPERATION HERE
LIMITED BY RDS (ON)
100uS
10
5
1mS
1
10mS
.5
.1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
100mS
TYPICAL PERFORMANCE CURVES
VGS=15 & 10V
1.05
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
ARF466A_B
25
1.10
1.00
0.95
0.90
0.85
0.80
20
8V
15
6V
10
5.5V
5V
5
4.5V
4V
0.75
-50
0
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.35
0.9
0.30
0.7
0.25
0.20
0.5
Note:
0.15
0.3
0.10
t1
t2
0.1
SINGLE PULSE
0.05
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RC MODEL
Junction
temp (°C)
0.113 °C/W
0.0130 F
0.236 °C/W
0.147 F
Power
(watts)
Case temperature (°C)
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
ZIN (Ω)
2.0
13.5
27.1
40.7
65
17.9 - j 11.2
1.1 - j 4.9
.25 - j 1.5
.15 - j 0.9
.31 + j 2.0
ZOL (Ω)
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
IDQ = 100mA
ZIN - Gate shunted with 25Ω
ZOL - Conjugate of optimum load for 300W output at Vdd = 150V
8-2005
10-5
Duty Factor D = t1/t
2
Peak TJ = PDM x ZθJC + TC
050-4925 Rev C
0.05
0
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.40
ARF466A_B
L4
R1
Bias +
0-12V RF
Input
R2
C7
R3
+
150V
-
C8
L3
C6
RF
Output
C9
C2
L1
C3
L2
C5
C4
DUT
TL1
C1
40.68 MHz Test Circuit
C1 -- 2200pF ATC 700B
C2-C5 -- Arco 465 Mica trimmer
C6-C8 -- .1µF 500V ceramic chip
C9 -- 3x 2200 pF 500V chips COG
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
L1 -- 4t #22 AWG .25"ID .25 "L ~87nH
L2 -- 5t #16 AWG .312" ID .35"L ~176nH
L3 -- 10t #24 AWG .25"ID ~.5µH
L4 -- VK200-4B ferrite choke 3µH
TO-264 (L) Package Outline
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
Drain
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
8-2005
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
5.79 (.228)
6.20 (.244)
050-4925 Rev C
R1- R3 -- 1kW 0.5Ω Carbon
TL1 -- 38Ω t-line .175 x 1 in long
C1 .45" from gate pin.
DUT = ARF466A/B
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Device
ARF - A
ARF - B
Gate
Drain
Source
Source
Drain
Gate
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.