140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MMBR911LT1 NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR MMBR911LT1G * G Denotes RoHS Compliant, Pb Free Terminal Finish DESCRIPTION: Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This small–signal plastic transistor offers superior quality and performance at low cost. FEATURES: • • • • • High Gain–Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS Symbol VCEO Rating Collector-Emitter Voltage Value 12 Unit Vdc VCBO Collector-Base Voltage 20 Vdc VEBO Emitter-Base Voltage 2.0 Vdc IC Collector Current-Continuous 60 mA PD(max) Power Dissipation @ Tcase = 75°C (1) Derate linearly above Tcase = 75°C 333 4.44 mW mW/°C TSTG TJmax Storage Temperature Maximum Junction Temperature -55 to +150 150 ºC ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G THERMAL CHARACTERISTICS Symbol Rating Value Unit RθJC Thermal Resistance, Junction to Case 225 °C/W ELECTRICAL SPECIFICATIONS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Symbol Characteristics Value Unit Min. Typ. Max. V(BR)CEO Collector-Emitter Breakdown Voltage (IC=1.0 mA, IB=0) 12 - - Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=0.1 mA, IE=0) 20 - - Vdc V(BR)EBO Emitter-Base Breakdown Voltage (IE=0.1 mA, IC=0) 2.0 - - Vdc - - 50 nAdc ICBO Collector Cutoff Current (VCB= 15 Vdc, IE=0) ON CHARACTERISTICS Symbol HFE Characteristics DC Current Gain (IC=30 mAdc, VCE=10 Vdc) Value Unit Min. Typ. Max. 30 - 200 - DYNAMIC CHARACTERISTICS Symbol Ccb fT Characteristics Value Unit Min. Typ. Max. Collector-Base Capacitance (VCB=10 Vdc, IE=0, f=1.0 MHz) - - 1.0 pF Current Gain-Bandwidth Product (VCE=10 Vdc, IC=30 mAdc, f=1.0 GHz) - 6.0 - GHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G FUNCTIONAL TESTS Symbol Test Conditions GNF Gain @ Noise Figure (IC=10 mAdc, VCE=10 Vdc) NF Noise Figure (IC=10 mAdc, VCE=10 Vdc) Value Unit Min. Typ. Max. f=0.5 GHz f=1.0 GHz - 17 11 - dB f=0.5 GHz f=1.0 GHz - 2.0 2.9 - dB Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 MMBR911LT1 MMBR911LT1G Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005