140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1204 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 80W POWER GAIN 9.0dB COMMON EMITTER DESCRIPTION: The SD1019 is a 28 volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes nichrome aluminum metallization to achieve infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 65 35 4 9 117 + 200 - 65 to + 150 V V V A W °C °C 1.7 ° C/W Thermal Data RTH(j-c) Junction-Case Thermal Resistance Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1204 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVCBO BVCEO BVEBO ICBO hFE Test Conditions IC = 20 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V Min. IE = 0 V IB = 0 mA IC = 0 mA IE = 0 V IC = 500 Ma Value Typ. Max. 65 35 4 Units V V V mA 1.5 5 DYNAMIC Symbol POUT GP COB Test Conditions f = 136 MHz f = 136 MHz f = 1 MHz VCE = 28 V VCE = 28 V VCB = 30 V Min. Value Typ. Max. 80 9 150 IE = 0 V IMPEDANCE DATA Freq. ZS (Ω Ω) ZCL (Ω Ω) 136 MHz .85 – j 0.5 W 4.5 + j 1.9 W VCE= 28 V PO = 80 W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Units W dB PF MS1204 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.