MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 36 18 4.0 4.5 80 +200 -65 to +150 V V V A W °C °C 2.2 ° C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance MS1227.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1227 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25° C) STATIC Symbol BVcbo Bvces Bvceo Bvebo Ices HFE Test Conditions IC = 50mA IC = 50mA IC = 50mA IE = 5mA VCB = 15V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 1A Min. Value Typ. Max. Unit 36 36 18 4.0 --10 ------------- --------5 200 V V V V mA --- Min. Value Typ. DYNAMIC Symbol Test Conditions Max. Unit POUT f = 30MHz VCC = 12.5V ICQ = 25mA 20 --- --- W GP f = 30MHz VCC = 12.5V ICQ = 25mA 15 --- --- dB IMD f = 30MHz VCC = 12.5V ICQ = 25mA --- --- -30 dB Cob f = 1 MHz VCB = 30V --- --- 135 pf MS1227.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1227 PACKAGE MECHANICAL DATA MS1227.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.