140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. TO-39 ABSOLUTE MAXIMUM RATINGS (TCASE = 25° 25°C) Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Total Power Dissipation Collector Peak Current Junction Temperature Storage Temperature Value Unit 65 40 4.0 7.0 1.0 200 -65 to 200 V V V W A ºC ºC 25 °C/W Thermal Data RTH(J-CASE) Thermal Resistance Junction-case Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1409 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVebo BVcbo BVceo Iceo HFE Test Conditions IE = 0.10 mA IC = 0.3 mA IC = 3 mA VCE = 30 V VCE = 5 V IC = 0 mA IE = 0 mA IS = 0 mA IC = 100 mA Min. Value Typ. Max. 4.0 65 40 --20 ----------- ------0.1 200 Min. Value Typ. Max. Unit V V V mA B DYNAMIC Symbol Test Conditions Unit POUT f =175 MHz PIN = 0.25W VCC = 28V 2.5 --- --- W ηC f =175 MHz PIN = 0.25W VCC = 28V 50 --- --- % GP f =175 MHz PIN = 0.25W VCC = 28V 10 --- --- dB COB f =1.0MHz VCB= 30V --- --- 10 pf Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1409 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.