MS2604 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2604 is a silicon NPN bipolar transistor designed for pulsed S-Band radar applications. The MS2604 is capable of operation over a wide range of pulse widths and duty cycles. Internal impedance matching and gold metalization provide consistent broadband performance and long term reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol VCC IC PDISS TJ TSTG Parameter Collector Supply Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 46 4 100 200 -65 to +200 V A W °C °C 2.0 °C/W Thermal Data RTH(J-C) 12-05-2002 Junction - Case Thermal Resistance MS2604 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVCBO BVEBO BVCER ICES HFE Test Conditions IC = 15 mA IE = 2 mA IC = 15 mA VCE = 40 V VCE = 5.0 V IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 1.5 A Min. Value Typ. Max. Unit 55 3.5 55 --30 ----------- ------10 150 V V V mA --- DYNAMIC Symbol POUT ηc GPE Conditions Test Conditions Min. Value Typ. Max. Unit VCC = 40V 25 --- --- W VCC = 40V f = 2700 - 3100 MHz PIN = 6.0 W f = 2700 - 3100 MHz PIN = 6.0 W VCC = 40V Pulse Width = 100 µsec Duty Cycle = 10% 30 6.2 ----- ----- % dB f = 2700 - 3100 MHz PIN = 6.0 W IMPEDANCE DATA Freq ZIN(Ω Ω) ZCL(Ω Ω) 2.7 GHz 12.0 + j3.0 15.0 - j4.0 2.9 GHz 6.5 + j0.0 15.5 - j3.0 3.1 GHz 5.0 - j3.0 11.0 - j3.0 PIN = 6 W VCC = 40 V 12-05-2002 MS2604 PACKAGE MECHANICAL DATA 12-05-2002