MS3011 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS Features · · · · · · 2.0 GHz POUT = 30.0 dBm GP = 7.0 dB MINIMUM 15:1 VSWR @ RATED CONDITIONS GOLD METALIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS3011 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°° C) Symbol Value Unit Collector-Emitter Bias Voltage 20 V IC Device Current 500 mA TJ Junction Temperature 200 ºC TSTG Storage Temperature -65 to +200 ºC 17 ° C/W PDISS Power Dissipation VCE Thermal Data RTH(J-C) 12-10-2002 Parameter Thermal Resistance Junction-case 5.5 W MS3011 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° 25° C) STATIC Symbol Test Conditions Min. Value Typ. Max. Unit BVCBO IC = 1mA IE = 0mA BVEBO IE = 1mA IC = 0mA 3.5 --- --- V BVCEO IC = 5mA IB = 0mA 20 --- --- V ICEO VCE = 18V --- --- 1.0 mA HFE VCE = 5V 15 --- 120 --- Value Typ. Max. Unit DYNAMIC Symbol IC = 250mA Test Conditions GP +GP f = 2.0GHz f = 2.0GHz POUT = 30.0 dBm POUT = 30.0 dBm COB f = 1 MHz VCB = 28V Conditions VCE = 18V IC = 220mA 12-10-2002 50 +POUT = 10dB Min. 7.0 ----- --- ------- --- --1.0 5.0 V dB dB pf MS3011 PACKAGE MECHANICAL DATA 12-10-2002