ADVANCEDPHOTONIX PDI-E940

GaAlAs High power IR LED Emitters
PDI-E940
PACKAGE DIMENSIONS INCH [mm]
.118 [3.00]
.075 [1.90]
.039 [1.00]
.004 [0.10]
.037 [0.95]
1
CLEAR
PLASTIC
2
140°
EMISSION
ANGLE
15°
.009 [0.22]
.110 [2.79]
.059 [1.50]
3
.008 [0.20]
.020 [0.51]
CHIP DIMENSIONS INCH [mm]
.043 [1.10]
1
2
.016 [0.41] SQ
Ø0.0045 [0.114]
CATHODE BOND PAD
3
SOT-23 PACKAGE
BOTTOM SIDE ANODE
FEATURES
DESCRIPTION
APPLICATIONS
• SOT-23 package
• Surface Mount
• Wide emission Angle
The PDI-E940 is a high power 940 nm and high
power GaAs emitter, packaged in a small low cost
SOT-23 surface mount package
• Fiber optic sources
• Optical encoders
• Point light sources
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER
MIN
MAX
UNITS
Pd
Power Dissipation
170
mW
If
Continuous Forward Current
100
mA
Ip
Peak Forward Current
1
A
Vr
Reverse Voltage
5
V
TSTG
Storage Temperature
-25
+100
TO
Operating Temperature
-25
+100
°C
°C
TS
Soldering Temperature*
+240
°C
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
Po
Vf
Vr
lp
Δl
Ct
tr
tf
CHARACTERISTIC
Output Power
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Spectral Halfwidth
Terminal Capacitance
Rise Time
Fall Time
TEST CONDITIONS
If = 50 mA
If = 20 mA
If = 10 μA
If = 100 mA
If = 100 mA
Vr = 0V, f = 1MHz
If = 100 mA
If = 100 mA
MIN
18
5
920
TYP
22
1.5
30
940
50
25
80
180
MAX
1.9
960
UNITS
mW
V
V
nm
nm
pF
nS
nS
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
REV 3/30/06