ADVANCEDPHOTONIX PDV

CdS Photoconductive Photocells
PDV-P8006
PACKAGE
DIMENSIONS
PACKAGE DIMENSIONS
INCHINCH
[mm] [mm]
±.010 [0.25]
.169 [4.29]
+.015 [0.38]
-.010 [0.25]
.079 [2.00]
EPOXY ON LEADS 3 mm MAX
2X Ø.016 [0.40]
.134 [3.40]
PLASTIC
COATED
±.010 [0.25]
Ø.200 [5.08]
2X 1.023 [26.0]
CERAMIC PACKAGE
FEATURES
DESCRIPTION
APPLICATIONS
• Visible light response
• Sintered construction
• Low cost
The PDV-P8006 are (CdS), Photoconductive
photocells designed to sense light from 400 to 700
nm. These light dependent resistors are available in
a wide range of resistance values. They’re packaged
in a two leaded plastic-coated ceramic header.
• Camera exposure
• Shutter controls
• Night light Controls
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
PARAMETER
MIN
MAX
Vpk
Applied Voltage
150
Pd Δpo/Δt
Continuous Power Dissipation
100
TO
Operating and Storage Temperature
TS
Soldering Temperature*
-30
+75
+260
UNITS
V
mW/°C
°C
°C
* 0.200 inch from base for 3 seconds with heat sink.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
RD
RI
S
lrange
lpeak
tr
Tf
CHARACTERISTIC
TEST CONDITIONS
After 10 sec. @ 10 Lux @ 2856 °K
10 Lux @ 2856 °K
LOG(R100)-LOG(R10)**
Sensitivity
LOG(E100)-LOG(E10)***
Spectral Application Range Flooded
Spectral Application Range Flooded
Rise Time
10 Lux @ 2856 °K
Fall Time
After 10 Lux @ 2856 °K
Dark Resistance
Illuminated Resistance
MIN
TYP
5
80
MAX
240
W/Lux
0.85
400
700
520
60
25
UNITS
MW
KW
nm
nm
ms
ms
**R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively .
***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
REV 3/30/06