Red Enhanced Quad Cell Silicon Photodiode SD 118-23-21-021 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .128 [3.25] .110 [2.79] 45° .075 [1.91] 5X Ø.018 [0.46] 1 Ø.236 [5.99] Ø.228 [5.79] Ø.330 [8.38] Ø.320 [8.13] 113° VIEWING ANGLE 4 CHIP PERIMETER .010 [0.25] MAX GLASS ABOVE CAP TOP EDGE .150 [3.81] SQUARE D A C D 5 2 3 A 4X .042 [1.07] SQUARE CHIP DIMENSIONS INCH [mm] ACTIVE AREA B B A Ø .362 [9.19] Ø .357 [9.07] 5X .500 [12.7] MIN CHIP DIMENSIONS INCH [mm] C 5 Ø.200 [5.08] PIN CIRCLE 3 B 4 C 1 D 2 TO-46 PACKAGE SCHEMATIC .005 [0.13] GAP TO-5 PACKAGE .005 [0.13] GAP DESCRIPTION APPLICATIONS The SD 118-23-21-021 is a red enhanced quad-cell silicon photodiode used for nulling, centering, or measuring small positional changes packaged in a hermetic TO-5 metal package. • Emitter Alignment • Position sensing • Medical and Industrial SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED +125 +240 °C 0.50 0.40 0.30 0.20 0.10 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTIC TEST CONDITIONS ID RSH Dark Current Shunt Resistance CJ Junction Capacitance lrange Spectral Application Range VR = 5 V VR = 10 mV VR = 0 V, f = 1 MHz VR = 5 V, f = 1 MHz Spot Scan l= 633nm, VR = 0 V l= 900nm, VR = 0 V I = 10 μA VR = 0V @ l=950nm RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V R Responsivity VBR NEP Breakdown Voltage Noise Equivalent Power tr Response Time** MIN TYP MAX UNITS 0.5 2.5 nA MW 450 35 7 350 0.32 0.50 pF 1100 0.36 0.55 50 2.5x10-14 190 13 nm A/W V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com 1150 1100 1050 950 1000 250 900 0.00 * 1/16 inch from case for 3 seconds max. 850 Soldering Temperature* -40 °C °C 800 TS +150 750 Operating Temperature -55 0.60 700 TO V 650 Storage Temperature 50 600 TSTG 0.70 UNITS 550 Reverse Voltage MAX 500 VBR MIN 300 PARAMETER Responsivity (A/W) SYMBOL 450 Low noise Red enhanced High shunt resistance High response 400 • • • • 350 FEATURES