Non-Cooled Large Area UV Silicon Avalanche Photodiode SD 630-70-73-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-73-500 is a non-cooled large area UV enhanced silicon avalanche photodiode (APD) with high gain and low noise in a SHV package. • Instrumentation • Medical SPECTRAL RESPONSE M = 200 MAX M Gain 250 TSTG Storage Temperature -55 +70 °C TO Operating Temperature -55 +40 °C TS Soldering Temperature* +240 °C * 1/16 inch from case for 3 seconds max. 100 100 UNITS 80 80 60 60 40 20 40 QE R 20 0 1050 950 1000 Wavelength (nm) 900 850 800 750 700 650 600 550 500 450 400 250 0 350 MIN 300 PARAMETER Responsivity (A/W) SYMBOL Quantum Efficiency (%) ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and Gain of 200 UNLESS OTHERWISE NOTED SYMBOL ID CJ IN lrange R Vop TVBR tr CHARACTERISTIC TEST CONDITIONS Dark Current Junction Capacitance f = 1 MHz Noise Current Spectral Density f = 100 kHz Spectral Application Range Spot Scan l= 350 nm, VR = 0 V Responsivity Operating voltage Temp. Coeff. Breakdown voltage Response Time* MIN TYP MAX UNITS 280 130 2.5 600 nA pF pA/√Hz nm A/W V V nS 350 38 1700 Constant Gain = 200 RL = 50 Ω, l= 675nm 5.5 1050 2000 2 15 22 *Response time of 10% to 90% is specified at 675nm wavelength light. Each part is supplied with gain bias voltages and dark current data. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com