AEGIS SEMICONDUTORES LTDA. A1A:460.XX VOLTAGE RATINGS VRRM , VR – (V) rep. peak reverse voltage Part Number Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage TJ = 0 to 180 OC TJ = -40 to 0 C TJ = 25 to 180 C A1A:460.02 200 200 300 A1A:460.04 400 400 500 A1A:460.06 600 600 700 A1A:460.08 800 800 900 A1A:460.10 1000 1000 1100 A1A:460.12 1200 1200 1300 A1A:460.14 1400 1400 1500 A1A:460.16 1600 1600 1700 O O This datasheet applies to: Metric thread: A1A:460.XX, A1B:460.XX Inch thread: A2A:460.XX, A2B:460.XX MAXIMUM ALLOWABLE RATINGS PARAMETER VALUE NOTES UNITS TJ Junction Temperature -40 to 180 O C - Tstg Storage Temperature -40 to 180 O C - Max. Av. current @ Max. TC IF(AV) IF(RMS) Nom. RMS current 460 125 940 A O C A 10900 IFSM Max. Peak non-rep. surge current 2 1/2 It 2 1/2 Max. I t capability F Mounting Force 50 Hz half cycle sine wave 11450 60 Hz half cycle sine wave Initial T J = 180OC, rated VRRM applied after surge. A 13000 50 Hz half cycle sine wave 13600 60 Hz half cycle sine wave 598 I2t Max. I2t capability 180O half sine wave 546 t = 10ms kA2s Initial T J = 180OC, no voltage applied after surge. Initial T J = 180OC, rated VRRM applied after surge. t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. 845 t = 10ms 772 t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. 8450 60(534) kA2s1/2 N.m(Lbf.in) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). - AEGIS SEMICONDUTORES LTDA. A1A:460.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.42 VF(TO)1 Low-level threshold --- --- 0.78 V VF(TO)2 High-level threshold --- --- 0.87 rF1 Low-level resistance --- --- 0.35 rF2 High-level resistance --- --- 0.31 IRM Peak reverse current --- --- 40 --- --- 0.15 O --- --- 0.17 O TEST CONDITIONS O Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 1445A. O V TJ = 180 C 2 Av. power = V F(TO) * IF(AV) +rF * [IF(RMS) ] mW Use low values for IFM < pIF(AV) mA TJ = 180 C. Max. rated VRRM O RthJC Thermal resistance, junction-to-case C/W 180O sine wave C/W 120O rectangular wave --- --- 0.19 O RthCS Thermal resistance, case-to-sink --- --- 0.015 O wt Weight --- 500(17.5) --- Case Style C/W Mtg. Surface smooth, flat and greased. Single side. g(oz.) --- DO-205AD(DO-13) --- Maximum Allowable Case Temperature 170 160 150 140 130 30º 60º 120 90º 110 120º 180º 100 0 100 200 300 400 500 Maximum Allowable Case Temperature 180 600 *Sinusoidal waveform Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Maximum Allowable Case Temperature (ºC) 180 Maximum Allowable Case Temperature (ºC) C/W DC operation 170 160 150 140 130 30º 120 60º 110 90º 120º 100 180º 90 80 DC 70 0 *Rectangular waveform 200 400 600 800 1000 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A1A:460.XX 6000 30º 5000 4000 60º 3000 90º 2000 120º 180º 1000 0 0 200 400 600 800 3000 60º 2000 90º 120º 180º DC 1000 0 0 200 Average Forward Current (A) 400 600 800 1000 Average Forward Current (A) Fig. 4 - On-State Power Loss Characteristics Forward Voltage Drop 1 Transient Thermal Impedance ZthJC (ºC/W) 10000 Instantaneous Forward Current (A) 4000 1000 Fig. 3 - On-State Power Loss Characteristics 1000 100 125ºC 0.0 30º *Rectangular waveform *Sinusoidal waveform 10 Maximum Average Forward Power Loss 5000 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss 0.5 25ºC 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous Forward Voltage (V) Fig. 5 - Forward Voltage Drop Characteristics Transient Thermal Impedance ZthJC 0.1 0.01 1E-3 1E-3 0.01 0.1 1 Time (s) Fig. 6 - Transient Thermal Impedance Characteristics 10 AEGIS SEMICONDUTORES LTDA. A1A:460.XX DO-205AD (DO-13) SW43 M24 x 1.5 (3/4" - 16UNF - 2A) Fig. 7 - Outline Characteristics