AEGIS SEMICONDUTORES LTDA. A1C:240S.XX.05 VOLTAGE RATINGS Part Number VRRM , VR – (V) rep. peak reverse voltage This datasheet applies to: Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage O TJ = 0 to 150OC TJ = -40 to 0 C TJ = 25 to 150 OC A1C:240S.02.05 200 200 300 A1C:240S.04.05 400 400 500 A1C:240S.06.05 600 600 700 A1C:240S.08.05 800 800 900 A1C:240S.10.05 1000 1000 1100 A1C:240S.12.05 1200 1200 1300 Metric thread: A1C:240S.XX.05, A1D:240S.XX.05 Inch thread: A2C:240S.XX.05, A2D:240S.XX.05 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature VALUE O - -40 to 150 O - C C Max. Av. current 240 A @ Max. TC 100 O IF(RMS) Nom. RMS current 380 A IF(AV) 6.27 60 Hz half cycle sine wave 6.56 50 Hz half cycle sine wave 7.15 60 Hz half cycle sine wave t = 10ms 187 2 1/2 Initial TJ = 125 OC, rated VRRM applied after surge. t = 8.3 ms 195 t = 10ms 213.00 t = 8.3 ms 2 1/2 As IRRM Maximum peak reverse current at rated VRRM . 1 mA IRM Peak reverse recovery current 25 A capability Initial TJ = 125OC, no voltage applied after surge. kA2s 2340 Max. I t Initial TJ = 125OC, rated VRRM applied after surge. kA I2t Max. I2t capability 2 1/2 50 Hz half cycle sine wave 171.00 It 180O half sine wave C 5.75 IFSM Max. Peak non-rep. surge current NOTES UNITS -40 to 150 IFM Peak forward current 240 A di/dt Max. Non-repetitive rate-ofrise current 50 A/ms F Mounting Force 30 N.m O Initial TJ = 125 C, no voltage applied after surge. Initial TJ = 125OC, no voltage applied after surge. 2 1/2 for time tx = I t * tx1/2. (0.1 < tx < 10ms). TJ = 25 OC O TJ = 25 C, VD = VDRM , IFM = 240A. - 2 It AEGIS SEMICONDUTORES LTDA. A1C:240S.XX.05 CHARACTERISTICS PARAMETER TYP. --- --- MAX. UNITS 1.75 VF(TO) Threshold voltage --- --- 0.8 V mW rF Slope resistance --- --- 1.15 trr Maximum reverse recovery time --- --- 1000 --- --- 2000 RthJC Thermal resistance, junction-to-case --- --- 0.2 O RthCS Thermal resistance, case-to-sink --- --- 0.03 O wt Weight --- 250(8.75) --- Case Style --- DO-205AB (DO-9) JEDEC TJ = 150 OC O TJ = 25 C, IF = 1A to V R = 30V, -dIF/dt = 25A/ms ns O TJ = 25 C, -dIF/dt = 25A/ms, IFM = p x rated IF(Av.). C/W DC operation C/W Mtg. Surface smooth, flat and greased. Single side cooled. --- g(oz.) --- Maximum Allowable Case Temperature Maximum Allowable Case Temperature 150 Maximum Allowable Case Temperature (ºC) 150 140 130 120 30º 110 60º 90º 120º 100 180º 90 80 0 50 *Sinusoidal waveform 100 150 200 140 130 120 30º 110 60º 120º 180º 90 DC 80 0 2000 60º 90º 1000 120º 180º 0 0 50 100 150 200 250 300 350 400 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics 100 150 200 250 300 350 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss 2500 30º *Sinusoidal waveform 50 *Rectangular waveform Maximum Average Forward Power Loss 3000 90º 100 250 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) TEST CONDITIONS Initial TJ = 25OC, 50-60Hz half sine, Ipeak = 754A. V Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (ºC) MIN. VFM peak on-state voltage 30º 2000 1500 60º 1000 90º 120º 180º 500 DC 0 0 50 *Rectangular waveform 100 150 200 250 300 350 400 Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics AEGIS SEMICONDUTORES LTDA. A1C:240S.XX.05 Forward Voltage Drop Transient Thermal Impedance ZthJC 1 Transient Thermal Impedance ZthJC (ºC/W) Instantaneous Forward Current (A) 1000 100 125ºC 25ºC 10 0.5 1.0 1.5 2.0 2.5 3.0 0.1 0.01 1E-3 0.01 0.1 10 Fig. 6 - Transient Thermal Impedance Characteristics Fig. 5 - Forward Voltage Drop Characteristics Frequency Characteristics 7000 1 Time (s) Instantaneous Forward Voltage (V) Frequency Characteristics 6000 4000 Peak On-State Current (A) Peak On-State Current (A) 5000 50 Hz 100 Hz 200 Hz 3000 500 Hz 1 kHz 2 kHz 2000 5 kHz 10 kHz 20 kHz 50 Hz 100 Hz 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz 1000 10 kHz 20 kHz 1000 101 102 *Sinusoidal pulse Tc = 60ºC 103 104 101 102 *Rectangular pulse Tc = 60ºC Pulse Basewidth (?s) 104 Pulse Basewidth (?s) Fig. 8 - Frequency Characteristics Fig. 7 - Frequency Characteristics Frequency Characteristics Frequency Characteristics 7000 103 6000 4000 Peak On-State Current (A) Peak On-State Current (A) 5000 50 Hz 3000 100 Hz 200 Hz 500 Hz 2000 1 kHz 2 kHz 5 kHz 50 Hz 100 Hz 200 Hz 500 Hz 1 kHz 1000 2 kHz 5 kHz 10 kHz 10 kHz 20 kHz 20 kHz 1000 *Sinusoidal Pulse Tc = 80ºC 102 103 Pulse Basewidth (?s) Fig. 9 - Frequency Characteristics 104 101 *Rectangular Pulse Tc = 80ºC 102 103 104 Pulse Basewidth (?s) Fig. 10 - Frequency Characteristics AEGIS SEMICONDUTORES LTDA. A1C:240S.XX.05 Frequency Characteristic 7000 Frequency Characteristics 6000 5000 Peak On-State Current (A) 4000 Peak On-State (A) 50 Hz 3000 100 Hz 200 Hz 500 Hz 2000 1 kHz 2 kHz 5 kHz 10 kHz 1000 20 kHz 50 Hz 100 Hz 200 Hz 1000 500 Hz 1 kHz 2 kHz 5 kHz 10 kHz 20 kHz 102 *Sinusoidal pulse Tc = 100ºC 103 104 *Rectangular pulse Tc = 100ºC Pulse Basewidth (?s) Fig. 11 - Frequency Characteristics 102 103 104 Pulse Basewidth (?s) Fig. 12 - Frequency Characteristics Maximum On-State Energy Power Loss Maximum On-State Energy Power Loss 10 J 1000 1000 10 J 5J Peak On-State Current (A) Peak On-State Current (A) 5J 2J 0.05 J 0.01 J 0.2 J 0.1 J 0.5 J 1J 0.02 J 100 2J 1J 0.5 J 0.01 J 0.02 J 0.05 J 0.1 J 0.2 J 100 10 10 2 3 10 102 4 10 10 *Sinusoidal pulse *Rectangular pulse Pulse Basewidth (?s) Fig. 13 - Maximum On-State Power Loss Characteristics M16 x 1.5 3/4 UNF 2A 103 104 Pulse Basewidth (?s) Fig. 14 - Maximum On-State Power Loss Characteristics DO-205AB(DO-9) SW32 Fig. 15 - Outline Characteristics