STD02N and STD02P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power (130 W) handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes, reducing external component count and simplifying circuit design ▪ NPN and PNP versions ▪ Emitter terminals placed symmetrically, pin 5 on NPN and pin 1 on PNP models, allowing adjacent placement on PCB to minimize trace length and output skew when used in pairs ▪ Approved by major manufacturers The STD02N and STD02P are enhanced Darlington transistors with built-in drivers and temperature compensation diode. Manufactured using the unique Sanken thin-wafer production technology, these devices achieve higher power levels through decreased thermal resistance, and can withstand higher voltages than similar devices on the market. Package: 5 pin TO-3P (MT-100) The temperature compensation diode is integrated on the same chip as the power transistors. By this design, the STD02N and STD02P eliminate delays that would otherwise be induced between thermal sensing at the heat source, and the operation of the compensation circuitry. Thus, these transistors are ideal for applications where enhanced thermal stability is required. This device is provided in a 5-pin TO-3P plastic package with pin 4 removed. Contact Allegro® for application support and additional information on device performance. Applications include: ▪ General amplifier applications ▪ Professional audio amplifiers ▪ Car audio amplifiers STD02N STD02P 1 2 3 4 5 Not to scale 1 2 3 4 5 Emitter pins symmetrical Equivalent Circuits STD02N 3 4 STD02P 1 1 5 2 5 3 Datasheet 28104.02 STD02N and STD02P Darlington Transistors for Audio Amplifiers SELECTION GUIDE Part Number Type STD02N* hFE Rating Range O: 5000 to 12000 NPN STD02P* Packing Range Y: 8000 to 20000 Bulk, 100 pieces Range O: 5000 to 12000 PNP Range Y: 8000 to 20000 *Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability. ABSOLUTE MAXIMUM RATINGS at TA = 25°C Characteristic Symbol Rating Unit VCBO 150 V VCEO 150 V VEBO 5 V IC 12 A IB 1 A Collector-Base Voltage1 Collector-Emitter Voltage1 Emitter-Base Voltage1 Collector Current1 Base Current1 PC 130 W Diode Forward Current IF 10 mA Junction Temperature TJ 150 °C Storage Temperature Tstg –55 to150 °C Collector Power Dissipation2 1For PNP type (STD02P), voltage and current values are negative. 2T = 25°C. C ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Symbol Current1 Collector-Cutoff Test Conditions Min. Typ. Max. Unit ICBO VCB = 150 V – – 100 μA Emitter Cutoff Current1 IEBO VEB = 5 V – – 100 μA Collector-Emitter Voltage1 VCEO IC = 30 mA 150 – – V hFE VCE = 4 V, IC = 7 A 5000 – 20000 – VCE(sat) IC = 7 A, IB = 7 mA – – –2.0 V VBE(sat) IC = 7 A, IB = 7 mA – – –2.5 V STD02N VCE = 20 V, IC = 40 mA – 1200 – mV DC Current Transfer Ratio2,3 Collector-Emitter Saturation Voltage1 Base-Emitter Saturation Voltage1 Base-Emitter Voltage Diode Forward Voltage VBE VF STD02P VCE = –20 V, IC = –40 mA – 1210 – mV STD02N IF = 2.5 mA – 705 – mV STD02P IF = 2.5 mA – 1540 – mV 1For PNP type (STD02P), voltage and current values are negative. rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y). 3When the transistor is used in pairs, the following conditions must be satisfied: Total V ≤ Total V F BE of the transistors (the above measurement conditions shall be applied), and ∆V = 0 to 500 mV. 2h FE All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature of +25°C, unless otherwise stated. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 STD02N and STD02P Darlington Transistors for Audio Amplifiers 10 1.2 2.0 m 10 mA 12 A STD02N Performance Characteristics at TA = 25°C 3 mA A 1.0 m 8 IC (A) IC vs. VCE 0.6 mA VCE(sat) vs. IB 6 0.4 mA VCE(sat) (V) 0.8 mA 10 A 7A IC= 5 A 1 4 IB= 0.2 mA 2 0 2 0 2 4 0 0.0001 6 0.001 0.01 IB (A) VCE (V) 0.1 1 106 12 10 105 hFE vs. IC 125 VCE = 4 V Continuous °C 6 4 VCE = 4 V Continuous 25°C –30° C IC (A) IC vs. VBE hFE 8 C 125° 25°C C –30° 104 103 2 0 0 0.5 1.0 1.5 VBE (V) 2.0 102 0.1 2.5 1 100 100 1000 100.0 10 1 10 0 m DC 0 m s s 10.0 Safe Operating Area Single pulse No heatsink Natural cooling TA=25° 1.0 IC (A) IF (mA) IF vs. VF For Diode 10 IC (A) 0.1 1 0.01 0 0.5 1.0 VF (V) 10.00 1.5 1 2.0 10 VCE (V) 130 100 1 10 t (ms) 100 RθJA (°C/W) PC (W) Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 50 0 0 k in 3.5 1000 ts ea H 0.01 ite PC vs. TA 0.10 fin In RθJA vs. t ith W 1.00 Without Heatsink 25 50 75 100 TA (°C) 125 150 3 STD02N and STD02P Darlington Transistors for Audio Amplifiers STD02P Performance Characteristics at TA = 25°C 10 0m A 3 2. 10 mA 12 1.2 mA –IC (A) 8 IC vs. VCE 0.8 mA 0.6 mA VCE(sat) vs. IB 6 0.4 mA –VCE(sat) (V) 1.0 mA 10 A 7A 1 4 –IC= 5 A –IB= 0.2 mA 2 0 2 0 2 4 0 0.0001 6 0.001 0.01 –IB (A) –VCE (V) 0.1 1 106 12 10 105 4 C hFE –VCE = 4 V Continuous –30° °C 6 25°C –VCE = 4 V Continuous hFE vs. IC 125 IC vs. VBE –IC (A) 8 125°C 25°C 104 –30°C 103 2 0 0 0.5 1.0 1.5 –VBE (V) 2.0 102 0.1 2.5 1 100 100 1000 100.0 10 1 10 0 m DC 0 m s s 10.0 Safe Operating Area Single pulse No heatsink Natural cooling TA=25° 1.0 IC (A) IF (mA) IF vs. VF For Diode 10 –IC (A) 0.1 1 0.01 0 0.5 1.0 VF (V) 10.00 1.5 1 2.0 10 –VCE (V) 130 100 ith W PC (W) 3.5 1 10 t (ms) 100 1000 50 0 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 0 nk 0.01 si at He PC vs. TA 0.10 ite fin In RθJA vs. t RθJA (°C/W) 1.00 Without Heatsink 25 50 75 100 TA (°C) 125 150 4 STD02N and STD02P Darlington Transistors for Audio Amplifiers PACKAGE OUTLINE DRAWING, TO-3P STD02P Terminal Configuration 15.6 ±0.3 2 +0.2 –0.1 +0.2 1.34 –0.1 +0.2 Terminal dimension at case surface +1 1.74 –0.1 1.7 ±0.1 20.5 –0.5 3 MAX XXXXXXXX XXXXXXXX (35.4) 14.9 ±0.2 Branding 19.9 ±0.3 3.2 –0.2 +0.1 Gate Burr 4.8 ±0.2 2 ±0.2 STD02N Terminal Configuration +0.2 1.05 –0.1 4×P2.54 ±0.1 = (10.16) Terminal dimensions at case surface +0.2 0.65 –0.1 4×P2.54 ±0.6 = 10.16 ±0.8 Terminal dimension at lead tips 15.8 ±0.2 1 2 3 4 5 1 2 3 4 5 Gate burr: 0.3 mm (max.), mold flash may appear at opposite side Terminal core material: Cu Terminal treatment: Ni plating and solder dip Heat sink material: Cu Heat sink treatment: Ni plating Leadform: 2804 Weight (approximate): 6.0 g Dimensions in millimeters Branding codes (exact appearance at manufacturer discretion): 1st line, type: STD02X Where: X is the transistor type (N or P) 2nd line, lot: YMDD H Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) DD is the 2-digit date H is the hFE rating (O or Y; for values see footnote, Electrical Characteristics table) Leadframe plating Pb-free. Device composition includes high-temperature solder (Pb >85%), which is exempted from the RoHS directive. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 5 STD02N and STD02P Darlington Transistors for Audio Amplifiers WARNING — These devices are designed to be operated at lethal voltages and energy levels. Circuit designs that embody these components must conform with applicable safety requirements. Precautions must be taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment. The use of an isolation transformer is recommended during circuit development and breadboarding. Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage • Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. • Avoid locations where dust or harmful gases are present and avoid direct sunlight. • Reinspect for rust in leads and solderability of products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink. Remarks About Using Silicone Grease with a Heatsink • When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce stress. • Volatile-type silicone greases may produce cracks after long periods of time, resulting in reduced heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink. • Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 Toshiba Silicone Co., Ltd. SC102 Dow Corning Toray Silicone Co., Ltd. Heatsink Mounting Method Torque When Tightening Mounting Screws. Thermal resistance increases when tightening torque is low, and radiation effects are decreased. When the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame. To avoid these problems, observe the recommended tightening torques for this product package type, TO-3P (MT-100): 0.686 to 0.882 N•m (7 to 9 kgf•cm). • Diameter of Heatsink Hole: < 4 mm. The deflection of the press mold when making the hole may cause the case material to crack at the joint with the heatsink. Please pay special attention for this effect. • Soldering • When soldering the products, please be sure to minimize the working time, within the following limits: 260±5°C 10 s 350±5°C 3 s • Soldering iron should be at a distance of at least 1.5 mm from the body of the products Electrostatic Discharge • When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 MΩ of resistance to ground to prevent shock hazard. • Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. • When using measuring equipment such as a curve tracer, the equipment should be grounded. • When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them from being applied to the products. • The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 6 STD02N and STD02P Darlington Transistors for Audio Amplifiers The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc. Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aerospace equipment) is not supported. When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use. Copyright © 2007 Allegro MicroSystems, Inc. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 7