February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION Access time : 55ns Low power consumption: Operating current :20mA (TYP.) Standby current : 1µ A (TYP.) LL-version Single 2.7V ~ 3.6V power supply The AS6C2008 is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. Fully static operation Tri-state output Data retention voltage : 1.5V (MIN.) All Products ROHS Compliant Package : 32-pin 450 mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm sTSOP 36-ball 6mm x 8mm TFBGA The AS6C2008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2008 operates from a single power supply of 2.7V ~ 3.6V . PRODUCT FAMILY Product Family AS6C2008 (I) Operating Temperature Vcc Range Speed -40 ~ 85ºC 2.7 ~ 3.6V 55ns FUNCTIONAL BLOCK DIAGRAM DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# CE2 WE# OE# CONTROL CIRCUIT 10/February/07, v.1.0 20µA(L)/1µA(LL) 20mA PIN DESCRIPTION Vcc Vss A0-A17 Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 256Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 - A17 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE#, CE2 Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection COLUMN I/O Alliance Memory Inc. Page 1 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 PIN CONFIGURATION 1 32 Vcc A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE# A7 5 28 A13 A6 6 27 A8 A5 7 A4 8 AS6C2008 A17 26 A9 25 A11 24 OE# 23 A10 A3 9 A2 10 A1 11 22 CE# A0 12 21 DQ7 DQ0 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 Vss 16 17 DQ3 A11 A9 A8 A13 WE# CE2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 AS6C2008 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1 DQ0 A0 A1 A2 A3 TSOP-I/sTSOP SOP A A0 A1 CE2 A3 A6 A8 B DQ4 A2 WE# A4 A7 DQ0 C DQ5 NC A5 D Vss Vcc E Vcc Vss F DQ6 A17 DQ2 G DQ7 OE# CE# A16 A15 DQ3 H NC A9 A10 1 2 A11 A12 3 4 TFBGA DQ1 A13 A14 5 6 10/February/07, v.1.0 Alliance Memory Inc. Page 2 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ABSOLUTE MAXIMUM RATINGS* PARAMETER Terminal Voltage with Respect to VSS SYMBOL VTERM Operating Temperature RATING -0.5 to 4.6 UNIT V ºC TA Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) -40 to 85(I grade) -65 to 150 1 50 260 TSTG PD IOUT TSOLDER ºC W mA ºC *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE CE# CE2 OE# WE# H X L L L X L H H H X X H L X X X H H L Standby Output Disable Read Write Note: SUPPLY CURRENT ISB,ISB1 ISB,ISB1 ICC,ICC1 ICC,ICC1 ICC,ICC1 I/O OPERATION High-Z High-Z High-Z DOUT DIN H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS VCC ≧ VOUT ≧ VSS, Output Leakage ILO Current Output Disabled Output High Voltage VOH IOH = -1mA Output Low Voltage VOL IOL = 2mA Cycle time = Min. ICC CE# = VIL and CE2 = VIH, - 55 II/O = 0mA Average Operating Cycle time = 1µs Power supply Current CE#≦0.2V and CE2≧VCC-0.2V, ICC1 II/O = 0mA other pins at 0.2V or VCC-0.2V ISB CE# = VIH or CE2 = VIL Standby Power CE# ≧VCC-0.2V Supply Current ISB1 or CE2≦0.2V -I* MIN. 2.7 2.2 - 0 .2 -1 TYP. 3.0 - *4 MAX. 3.6 VCC+0.3 0.6 1 UNIT V V V µA -1 - 1 µA 2.2 - 2.7 - 0.4 V V - 20 35 mA - 4 5 mA - 0.3 0.5 mA - 1 20 *5 µA *I= Industrial temperature 10/February/07, v.1.0 Alliance Memory Inc. Page 3 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at V CC = VCC(TYP.) and TA = 25 ºC 5. 10µA for special request CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER SYM Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH (2) WRITE CYCLE PARAMETER SYM Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* AS6C2008-55 MIN MAX. 55 55 55 30 10 5 20 20 10 - UNIT AS6C2008-55 MIN MAX. 55 50 50 0 45 0 25 0 5 20 UNIT *These parameters are guaranteed by device characterization, but not production tested. 10/February/07, v.1.0 Alliance Memory Inc. ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Page 4 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE CE2 OE# tCLZ Dout High-Z tOLZ tOE tOH tOHZ tCHZ Data Valid High-Z Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low., CE2 = high. 3.Address must be valid prior to or coincident with CE# = low , CE2 = high; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, t CHZ is less than tCLZ , tOHZ is less than tOLZ. 10/February/07, v.1.0 Alliance Memory Inc. Page 5 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW CE2 tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW (4) tDH Data Valid Din WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW CE2 tWP WE# tWHZ Dout (4) High-Z tDW Din tDH Data Valid Notes : 1.WE#, CE# must be high or CE2 must be low during all address transitions. 2.A write occurs during the overlap of a low CE#, high CE2, low WE#. 3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 10/February/07, v.1.0 Alliance Memory Inc. Page 6 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL VCC for Data Retention VDR Data Retention Current I IDR TEST CONDITION CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V VCC = 1.5V CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V -I* See Data Retention Waveforms (below) Chip Disable to Data tCDR Retention Time Recovery Time tR tRC* = Read Cycle Time **I= Industrial temperature MIN. TYP. MAX. UNIT 1.5 - 3.6 V - 0.5 10 0 - - ns tRC* - - ns µA DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Low Vcc Data Retention Waveform (2) (CE2 controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE2 tR CE2 ≦ 0.2V VIL 10/February/07, v.1.0 VIL Alliance Memory Inc. Page 7 of 13 February 2007 AS6C2008 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 PACKAGE OUTLINE DIMENSION 32 pin 450 mil SOP Package Outline Dimension SYM. A A1 A2 b c D E E1 e L L1 S y Θ 10/February/07, v.1.0 UNIT INCH.(BASE) MM(REF) 0.118 (MAX) 0.004(MIN) 0.111(MAX) 0.016(TYP) 0.008(TYP) 0.817(MAX) 0.445 ±0.005 0.555 ±0.012 0.050(TYP) 0.0347 ±0.008 0.055 ±0.008 0.026(MAX) 0.004(MAX) o o 0 -10 2.997 (MAX) 0.102(MIN) 2.82(MAX) 0.406(TYP) 0.203(TYP) 20.75(MAX) 11.303 ±0.127 14.097 ±0.305 1.270(TYP) 0.881 ±0.203 1.397 ±0.203 0.660 (MAX) 0.101(MAX) o o 0 -10 Alliance Memory Inc. Page 8 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 32 pin 8mm x 20mm TSOP-I Package Outline Dimension UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ 10/February/07, v.1.0 INCH(BASE) MM(REF) 0.047 (MAX) 0.004 ±0.002 0.039 ±0.002 0.008 + 0.002 - 0.001 0.005 (TYP) 0.724 ±0.004 0.315 ±0.004 0.020 (TYP) 0.787 ±0.008 0.0197 ±0.004 0.0315 ±0.004 0.003 (MAX) o o 0 ～5 1.20 (MAX) 0.10 ±0.05 1.00 ±0.05 0.20 + 0.05 -0.03 0.127 (TYP) 18.40 ±0.10 8.00 ±0.10 0.50 (TYP) 20.00 ±0.20 0.50 ±0.10 0.08 ±0.10 0.076 (MAX) o o 0 ～5 Alliance Memory Inc. Page 9 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 32 pin 8mm x 13.4mm sTSOP Package Outline Dimension HD cL 12° (2x) 32 16 17 12° (2x) b E e 1 "A" Seating Plane D y 12° (2X) 16 17 0.254 A2 c A GAUGE PLANE A1 0 SEATING PLANE "A" DETAIL VIEW 1 L1 32 SYM. UNIT A A1 A2 b c D E e HD L L1 y Θ 10/February/07, v.1.0 L 12° (2X) INCH(BASE) MM(REF) 0.049 (MAX) 0.005 ±0.002 0.039 ±0.002 0.008 ±0.01 0.005 (TYP) 0.465 ±0.004 0.315 ±0.004 0.020 (TYP) 0.528±0.008 0.0197 ±0.004 0.0315 ±0.004 0.003 (MAX) o o 0 ～5 1.25 (MAX) 0.130 ±0.05 1.00 ±0.05 0.20±0.025 0.127 (TYP) 11.80 ±0.10 8.00 ±0.10 0.50 (TYP) 13.40 ±0.20. 0.50 ±0.10 0.8 ±0.10 0.076 (MAX) o o 0 ～5 Alliance Memory Inc. Page 10 of 13 February 2007 AS6C2008 ® Rev. 1.1 256K X 8 BIT LOW POWER CMOS SRAM 36 ball 6mm × 8mm TFBGA Package Outline Dimension 10/February/07, v.1.0 Alliance Memory Inc. Page 11 of 13 February 2007 AS6C2008 ® 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ORDERING INFORMATION Ordering Codes Alliance Organization VCC range Operating Speed Temp ns Industrial ~ -40ºC to 85º C 55 Industrial ~ -40ºC to 85º C 55 Industrial ~ -40ºC to 85º C 55 Industrial ~ -40ºC to 85º C 55 Package AS6C2008-55SIN 256K X 8 2.7-3.6V 32pin 450mil SOP AS6C2008-55TIN 256K X 8 2.7-3.6V 32pin TSOP-I (8 x 20 mm) AS6C2008-55STIN 256K X 8 2.7-3.6V 32pin sTSOP (8 x 13.4 mm) AS6C2008-55BIN 256K X 8 2.7-3.6V 36pin TFBGA (6mm x 8mm) Part numbering system AS6C low power SRAM prefix 2008 Device Number 20 = 2M 08 = by 8 - 55 X Package Options: S = 32 pin 450 mil SOP T = 32 pin TSOP 1 (8mm x 20 mm) Access ST = 32 pin sTSOP (8 x 13.4 mm) Time B = 36 ball 6 x 8mm TFBGA 10/February/07, v.1.0 Alliance Memory Inc. X N Temperature Range: N = Lead I = Industrial Free ROHS (-40º to +85º C) Compliant Part Page 12 of 13 February 2007 AS6C2008 ® ® Alliance Memory, Inc. 1116 South Amphlett, #2, San Mateo, CA 94402 Tel: 650-525-3737 Fax: 650-525-0449 Copyright © Alliance Memory All Rights Reserved Part Number: AS6C2008 Document Version: v. 1.0 www.alliancememory.com © Copyright 2003 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights; mask works rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. 10/February/07, v.1.0 Alliance Memory Inc. Page 13 of 13