ANACHIP AF4502CS

AF4502C
P & N-Channel 30-V (D-S) MOSFET
Features
General Description
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Product Summary
VDS (V)
30
-30
rDS(on) (mΩ)
ID (A)
[email protected]=4.5V
[email protected]=10V
[email protected]=-4.5V
[email protected]=-10V
8.4
10.0
-6.8
-8.5
Pin Descriptions
Pin Assignments
S1
1
8
D1
Pin Name
Description
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S1
G1
D1
S2
G2
D2
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
SOP-8
Ordering information
Feature
F :MOSFET
A X
4502C X X X
PN
Package
Lead Free
Packing
S: SOP-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/8
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Parameter
N-Channel
30
20
TA=25ºC
10
Continuous Drain Current (Note 1)
TA=70ºC
8.1
Pulsed Drain Current (Note 2)
±50
Continuous Source Current (Diode Conduction) (Note 1)
2.3
TA=25ºC
2.1
Power Dissipation (Note 1)
TA=70ºC
1.3
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
P-Channel
-30
-25
-8.5
-6.8
±50
-2.1
2.1
1.3
-55 to 150
Units
V
A
A
A
W
ºC
Thermal Resistance Ratings
Symbol
RθJC
RθJA
Parameter
Maximum Junction-to-Case (Note 1)
Maximum Junction-to-Ambient (Note 1)
Maximum
40
60
t < 5 sec
t < 5 sec
Units
ºC/W
ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (TA=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Ch
Limits
Min.
Typ.
Max.
30
-30
1
-1.0
20
-50
-
3
-3
±100
±100
1
-1
13.5
20
19
30
-
Unit
Static
V(BR)DSS
VGS(th)
Drain-Source breakdown Voltage
Gate-Threshold Voltage
IGSS
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(on)
On-State Drain Current (Note 3)
rDS(on)
Drain-Source On-Resistance
gfs
(Note 3)
Forward Tranconductance
(Note 3)
VGS=0V, ID=250uA
VGS=0V, ID=-250uA
VDS= VGS, ID=250uA
VDS= VGS, ID=-250uA
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VDS=24V, VGS=0V
VDS=-24V, VGS=0V
VDS=5V, VGS=10V
VDS=-5V, VGS=-10V
VGS=10V, ID=10A
VGS=4.5V, ID=8.4A
VGS=-10V, ID=-8.5A
VGS=-4.5V, ID=-6.8A
VDS=15V, ID=10A
VDS=-15V, ID=-9.5A
Anachip Corp.
www.anachip.com.tw
N
P
N
P
N
P
N
P
N
P
N
P
N
P
1.95
-1.6
11
15
16
26
40
31
V
V
nA
uA
A
mΩ
S
Rev. 1.1 Jul 20, 2004
2/8
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Specifications (TA=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Ch
Limits
Min.
Typ.
Max.
Unit
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
N-Channel
VDS=15V, VGS=4.5V
ID=10A
P-Channel
VDS=-15V, VGS=-4.5V
ID=-10A
N
P
N
P
N
P
-
12
13
3.3
5.8
4.5
12
19
26
-
nC
N-Channel
VDD=15, VGS=10V
ID=1A, RGEN=25Ω
P-Channel
VDD=-15, VGS=-10V
ID=-1A, RGEN=15Ω
N
P
N
P
N
P
N
P
-
20
15
9
16
70
62
20
46
30
26
20
21
102
108
81
71
nS
Switching
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
3/8
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
4/8
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
5/8
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
6/8
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
7/8
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Marking Information
SOP-8L
( Top View )
8
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Logo
4502C
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
Package Information
H
E
Package Type: SOP-8L
L
VIEW "A"
D
0.015x45
7 (4X)
e
B
A1
C
A
A2
7 (4X)
VIEW "A"
y
Symbol
A
A1
A2
B
C
D
E
e
H
L
y
θ
Dimensions In Millimeters
Min.
Nom.
Max.
1.40
1.60
1.75
0.10
0.25
1.30
1.45
1.50
0.33
0.41
0.51
0.19
0.20
0.25
4.80
5.05
5.30
3.70
3.90
4.10
1.27
5.79
5.99
6.20
0.38
0.71
1.27
0.10
0O
8O
Anachip Corp.
www.anachip.com.tw
Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040
0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075
0.008
0.010
0.189
0.199
0.209
0.146
0.154
0.161
0.050
0.228
0.236
0.244
0.015
0.028
0.050
0.004
0O
8O
Rev. 1.1 Jul 20, 2004
8/8