AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package. • • SC70JW-8 Package Applications • • • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -5.4A @ 25°C Low On-Resistance: — 35mΩ @ VGS = -4.5V — 60mΩ @ VGS = -2.5V Top View Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones D D D D 8 7 6 5 Absolute Maximum Ratings 1 2 3 4 TA = 25°C, unless otherwise noted. S S S G Symbol VDS VGS ID IDM IS TJ TSTG Description Value Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150°C1 TA = 25°C TA = 70°C Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range Units -20 ±12 ±5.4 ±4.3 ±32 -1.5 -55 to 150 -55 to 150 °C °C V A Thermal Characteristics1 Symbol RθJA RθJA2 RθJF PD Description Typ Max Units Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot 100 61 33 120 73.5 40 1.7 1.0 °C/W °C/W °C/W Maximum Power Dissipation TA = 25°C TA = 70°C W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs. 8515.2005.04.1.0 1 AAT8515 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25°C, unless otherwise noted. Symbol Description Conditions Min DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA -20 VGS = -4.5V, ID = -5.4A VGS = -2.5V, ID = -4.1A 1 ID(ON) On-State Drain Current VGS = -4.5V, VDS = -5V (pulsed) VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250µA IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V V = 0V, VDS = -20V IDSS Drain Source Leakage Current GS VGS = 0V, VDS = -16V, TJ = 70°C2 1 gfs Forward Transconductance VDS = -5V, ID = -5.4A Dynamic Characteristics2 QG Total Gate Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V QGS Gate-Source Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V QGD Gate-Drain Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V tD(ON) Turn-On Delay VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tR Turn-On Rise Time VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tD(OFF) Turn-Off Delay VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tF Turn-Off Fall Time VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -5.4A Voltage1 IS Continuous Diode Current3 RDS(ON) Typ Max V 27 46 Drain-Source On-Resistance1 Units 35 60 -32 -0.6 ±100 -1 -5 12 mΩ A V nA µA S 13.6 2.3 5.5 10 37 36 52 nC ns -1.4 V -1.5 A 1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2 8515.2005.04.1.0 AAT8515 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Transfer Characteristics Output Characteristics 32 5V 4.5V 32 4V VD=VG 25°C 3.5V 24 125°C -55°C 24 ID (A) IDS (A) 3V 16 16 2.5V 2V 8 8 1.5V 0 0 0 0 1 2 3 1 2 4 On-Resistance vs. Drain Current 5 On-Resistance vs. Gate-to-Source Voltage 120 60 ID = 6.5A VGS = 2.5 V 50 100 40 RDS(ON) (mΩ) RDS(ON) (mΩ) 4 VGS (V) VDS (V) 30 VGS = 4.5 V 20 80 60 40 20 10 0 0 0 2 4 6 8 10 0 12 1 2 4 5 Threshold Voltage On-Resistance vs. Junction Temperature 0.5 1.4 VGS = 4.5V ID = 6.5A ID = 250µA 0.4 VGS(th) Variance (V) 1.3 3 VGS (V) ID (A) Normalized RDS(ON) 3 1.2 1.1 1.0 0.9 0.8 0.3 0.2 0.1 0 -0.1 -0.2 0.7 -0.3 -50 0.6 -50 -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150 TJ (°C) TJ (°C) 8515.2005.04.1.0 3 AAT8515 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Gate Charge 5 100 VD=15V ID=6.5A 4 TJ = 150°C 10 3 IS (A) VGS (V) Source-Drain Diode Forward Voltage 2 TJ = 25°C 1 1 0 0 3 6 9 12 15 QG, Charge (nC) 0.1 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) Capacitance Capacitance (pF) 2000 1600 Ciss 1200 800 Coss 400 Crss 0 0 5 10 15 20 VDS (V) 4 8515.2005.04.1.0 AAT8515 20V P-Channel Power MOSFET Ordering Information Package Marking1 Part Number (Tape and Reel)2 SC70JW-8 GTXYY AAT8515IJS-T1 Package Information SC70JW-8 2.20 ± 0.20 1.75 ± 0.10 0.50 BSC 0.50 BSC 0.50 BSC 0.225 ± 0.075 2.00 ± 0.20 0.100 7° ± 3° 0.45 ± 0.10 4° ± 4° 0.05 ± 0.05 0.15 ± 0.05 1.10 MAX 0.85 ± 0.15 0.048REF 2.10 ± 0.30 All dimensions in millimeters. 1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD. 8515.2005.04.1.0 5 AAT8515 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 8515.2005.04.1.0