AAT9512 28V N-Channel Power MOSFET General Description Features The AAT9512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of a SC70 package. • • • VDS(MAX) = 28V ID(MAX) 1 = 4.5A @ 25°C Low RDS(ON): • 48 mΩ @ VGS = 4.5V • 76 mΩ @ VGS = 2.5V Applications • • • Top View Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment Absolute Maximum Ratings Symbol VDS VGS D D D D 8 7 6 5 1 S 2 S 3 S 4 G (TA=25°C unless otherwise noted) Description Value Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C ID Continuous Drain Current @ TJ=150 C IDM IS Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) PD Maximum Power Dissipation TJ, TSTG Preliminary Information SC70JW-8 Package 1 1 TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range 1 Units 28 ±12 ±4.5 ±3.6 ±20 1.2 1.6 1.0 -55 to 150 °C Value Units 102 78 35 °C/W °C/W °C/W V A W Thermal Characteristics Symbol RθJA RθJA2 RθJF 9512.2003.04.0.61 Description Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1 1 1 1 AAT9512 28V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless otherwise noted) Conditions DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA VGS=4.5V, ID=4.5A RDS(ON) Drain-Source ON-Resistance 2 VGS=2.5V, ID=3.6A ID(ON) On-State Drain Current 2 VGS=4.5V, VDS=5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=250µA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V VGS=0V, VDS=28V IDSS Drain Source Leakage Current VGS=0V, VDS=23V, TJ=70°C gfs Forward Transconductance 2 VDS=5V, ID=4.5A 3 Dynamic Characteristics QG Total Gate Charge VDS=15V, RD=3.0Ω, VGS=4.5V QGS Gate-Source Charge VDS=15V, RD=3.0Ω, VGS=4.5V QGD Gate-Drain Charge VDS=15V, RD=3.0Ω, VGS=4.5V tD(ON) Turn-ON Delay VDD=15V, VGS=4.5V, RD=3.0Ω, tR Turn-ON Rise Time VDD=15V, VGS=4.5V, RD=3.0Ω, tD(OFF) Turn-OFF Delay VDD=15V, VGS=4.5V, RD=3.0Ω, tF Turn-OFF Fall Time VDD=15V, VGS=4.5V, RD=3.0Ω, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=4.5A IS Continuous Diode Current 1 Min Typ Max 28 V 36 57 48 76 20 0.6 ±100 1 5 7 RG=6Ω RG=6Ω RG=6Ω RG=6Ω Units mΩ A V nA µA S 5 0.9 1 6 3 30 8 nC ns 1.6 1.2 V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 5 second pulse on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. RθJF is guaranteed by design; however, RθFA is determined by PCB design. Actual maximum continuous current is limited by the application’s design. Note 2: Pulse test: Pulse width = 300 µs. Note 3: Guaranteed by design. Not subject to production testing. 2 9512.2003.04.0.61 AAT9512 28V N-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Transfer Characteristics Output Characteristics 16 IDS (A) 20 5V 4.5V 4V 3V 2.5V 8 2.V 4 25°C 12 125°C 8 4 1.5V 0 0.5 -55°C 16 12 0 VD = VG 3.5V ID (A) 20 1 1.5 0 2 0 1 2 VDS (V) 3 4 VGS (V) On-Resistance vs. Drain Current On-Resistance vs. Gate to Source Voltage 0.1 0.16 I D = 5A 0.12 0.1 RDS(ON) (Ω) RDS(ON) (Ω) 0.14 VGS = 2.5V 0.08 0.06 0.04 0.06 0.04 0.02 VGS = 4.5V 0.02 0.08 0 0 0 5 10 15 20 0 1 2 ID (A) 5 Threshold Voltage 1.8 0.4 VGS = 4.5V ID = 5A VGS(th) Variance (V) Normalized RDS(ON) 4 VGS (V) On-Resistance vs. Junction Temperature 1.6 3 1.4 1.2 1 ID = 250µA 0.2 0 -0.2 0.8 0.6 -50 -0.4 -50 -25 0 25 50 TJ (°C) 9512.2003.04.0.61 75 100 125 150 -25 0 25 50 75 100 125 150 TJ (°C) 3 AAT9512 28V N-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Gate Charge 100 5 VD = 15V I D = 5A IS (A) 4 VG (V) Source-Drain Diode Forward Voltage 3 TJ = 150°C 10 2 TJ = 25°C 1 1 0 0 1 2 3 4 5 QG, Charge (nC) 0.1 0 0.5 1 1.5 VSD (V) Capacitance 750 Capacitance (pF) Ciss 600 450 300 Crss 150 Coss 0 0 10 20 30 VDS (V) 4 9512.2003.04.0.61 AAT9512 28V N-Channel Power MOSFET Ordering Information Package Marking1 Part Number (Tape and Reel) SC70JW-8 GOXYY AAT9512IJS-T1 Note: Sample stock is generally held on all part numbers listed in BOLD. Note 1: XYY = assembly and date code. Package Information 2.20 ± 0.20 1.75 ± 0.10 0.50 BSC 0.50 BSC 0.50 BSC 0.225 ± 0.075 2.00 ± 0.20 0.100 7° ± 3° 0.45 ± 0.10 4° ± 4° 0.05 ± 0.05 0.15 ± 0.05 1.10 MAX 0.85 ± 0.15 0.048REF 2.10 ± 0.30 All dimensions in millimeters. 9512.2003.04.0.61 5 AAT9512 28V N-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 9512.2003.04.0.61