APM2014NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/40A, RDS(ON)=12mΩ (typ.) @ VGS=4.5V RDS(ON)=18mΩ (typ.) @ VGS=2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant) D Applications • Power Management in Desktop Computer or G DC/DC Converters S N-Channel MOSFET Ordering and Marking Information Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2014N Lead Free Code Handling Code Temp. Range Package Code APM2014N U : APM2014N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw APM2014NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 16 A TC=25°C 100 TC=100°C 75 TC=25°C 40* TC=100°C 25 TC=25°C 50 TC=100°C 20 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC 2.5 Thermal Resistance-Junction to Case A A W °C/W 2 Mounted on PCB of 1in pad area IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA TA=25°C 100 TA=100°C 75 TA=25°C 10 TA=100°C 6 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A A W °C/W Mounted on PCB of Minimum Footprint IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance-Junction to Ambient TA=25°C 100 TA=100°C 75 TA=25°C 9 TA=100°C 6 TA=25°C 1.6 TA=100°C 0.6 75 A A W °C/W Note: * Current limited by bond wire. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 2 www.anpec.com.tw APM2014NU Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2014NU Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 20 V VDS=16V, VGS=0V 1 TJ=85°C VGS(th) IGSS VGS=0V, IDS=250µA Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±16V, VDS=0V RDS(ON) a Drain-Source On-state Resistance 30 0.7 0.9 µA 1.5 V ±100 nA VGS=4.5V, IDS=10A 12 14 VGS=2.5V, IDS=5A 18 25 ISD=4A, VGS=0V 0.8 1.3 VGS=0V,VDS=0V,F=1MHz 1.7 mΩ Diode VSDa Diode Forward Voltage Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf trr Qrr b Reverse Recovery Time Reverse Recovery Charge Gate Charge Characteristics Qg VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω ISD=10A, dISD/dt =100A/µs Ω 1290 pF 300 210 10 20 15 29 28 52 17 33 ns 20 ns 9 nC b Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VGS=0V, VDS=15V, Frequency=1.0MHz Turn-off Fall Time b V b 18.2 VDS=10V, VGS=4.5V, IDS=5A 5.6 24 nC 4.8 a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 3 www.anpec.com.tw APM2014NU Typical Characteristics Drain Current Power Dissipation 50 60 40 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 30 20 10 10 o TC=25 C,VG=4.5V o 0 TC=25 C 0 20 40 0 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 200 2 Normalized Effective Transient Rd s(o n) ID - Drain Current (A) Lim it 100 10ms 100ms 10 1s DC 1 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 2 o 0.1 0.1 1 10 0.01 1E-4 70 Copyright ANPEC Electronics Corp. 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Rev. B.2 - Oct., 2005 Mounted on 1in pad o RθJA :50 C/W Single Pulse TC=25 C 4 www.anpec.com.tw APM2014NU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 100 40 VGS=5,6,7,8,9,10V 90 36 ID - Drain Current (A) 80 RDS(ON) - On - Resistance (mΩ) 4V 70 60 50 3V 40 30 2.5V 20 10 0 32 28 24 20 1 2 3 12 8 4 4 0 5 20 40 60 80 ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 100 1.6 IDS =250µA 80 Normalized Threshold Vlotage 90 ID - Drain Current (A) 0 VDS - Drain - Source Voltage (V) 100 o Tj=-55 C 70 60 o Tj=25 C o 50 Tj=125 C 40 30 20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 10 0 VGS=4.5V 16 2V 0 VGS=2.5V 0 1 2 3 4 5 0.0 -50 -25 6 Rev. B.2 - Oct., 2005 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. 0 5 www.anpec.com.tw APM2014NU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 30 2.2 IDS = 10A 1.8 10 1.6 IS - Source Current (A) Normalized On Resistance 2.0 VGS = 4.5V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 o Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 12mΩ 0.0 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 5 Frequency=1MHz VDS=10V ID = 5A VGS - Gate-source Voltage (V) 1800 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 2100 1500 Ciss 1200 900 600 Coss 300 0 0.2 4 3 2 1 Crss 0 4 8 12 16 0 20 Rev. B.2 - Oct., 2005 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 0 6 www.anpec.com.tw APM2014NU Package Information TO-252 (Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 D1 A1 E1 Dim Millimeters Inches Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 6.73 0.250 D1 E 5.2 REF 6.35 E1 0.205 REF 5.3 REF 0.265 0.209 REF e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 0.020 7 www.anpec.com.tw APM2014NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 8 www.anpec.com.tw APM2014NU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 D1 9 Ko www.anpec.com.tw APM2014NU Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 F D D1 Po 7.5 ± 0.1 1.5 +0.1 T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 Ao W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 Bo Ko t 2.5± 0.1 0.3±0.05 6.8 ± 0.1 10.4± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 10 www.anpec.com.tw