ANPEC APM2054NVC-TU

APM2054NV
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
20V/5A,
RDS(ON)= 35mΩ (typ.) @ VGS= 10V
RDS(ON)= 45mΩ (typ.) @ VGS= 4.5V
RDS(ON)= 110mΩ (typ.) @ VGS= 2.5V
•
•
•
Super High Dense Cell Design
Top View of SOT-223
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(2)
D
Applications
•
•
(1)
G
Switching Regulators
Switching Converters
S
(3)
N-Channel MOSFET
Ordering and Marking Information
Package Code
V : SOT-223
Operating Junction Temp. Range
C : -55 to 150 ° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2054N
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2054N V :
APM2054N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
1
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APM2054NV
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±16
I D*
Continuous Drain Current
IDM *
Pulsed Drain Current
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
A
20
A
3
150
T STG
Storage Temperature Range
P D*
Power Dissipation for Single Operation
RθJA*
V
5
V GS=10V
I S*
Unit
°C
-55 to 150
T A=25°C
1.47
T A=100°C
0.58
Thermal Resistance-Junction to Ambient
W
°C/W
85
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Test Condition
APM2054NV
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
V GS(th)
IGSS
RDS(ON)
VSD
a
a
VGS=0V, IDS=250µA
1
T J=85°C
VDS=VGS, I DS=250µA
Gate Leakage Current
VGS=±16V, VDS=0V
Diode Forward Voltage
V
VDS=16V, V GS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
20
30
0.6
0.9
µA
1.5
V
±100
nA
VGS=10V, IDS=5A
35
40
VGS=4.5V, I DS=3.5A
45
54
VGS=2.5V, I DS=2.5A
110
130
ISD =3A, V GS=0V
0.85
1.3
11
13
mΩ
V
Gate Charge Characteristics b
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Q gd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
VDS=10V, V GS=4.5V,
IDS=6A
3.8
nC
5.2
2
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APM2054NV
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2054NV
Min.
Typ.
Max.
7
10
15
25
19
26
6
7
Unit
Dynamic Characteristics b
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Turn-off Fall Time
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Notes:
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=20V,
Frequency=1.0MHz
ns
Ω
2.5
450
100
pF
60
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
3
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APM2054NV
Typical Characteristics
Drain Current
Power Dissipation
6
1.6
1.4
5
ID - Drain Current (A)
Ptot - Power (W)
1.2
1.0
0.8
0.6
0.4
4
3
2
1
0.2
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
it
im
)L
n
s(o
Rd
Normalized Transient Thermal Resistance
ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=10V
300µs
1ms
1
10ms
100ms
1s
0.1
DC
o
T =25 C
0.01 A
0.1
1
10
60
Rev. B.2 - Apr., 2005
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4 1E-3 0.01
Mounted on 1in pad
o
RθJA :85 C/W
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
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4
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APM2054NV
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
20
160
VGS= 4, 5, 6, 7, 8, 9, 10V
18
RDS(ON) - On - Resistance (mΩ)
140
ID - Drain Current (A)
16
14
12
3V
10
8
6
4
2
0
120
100
80
60
VGS=10V
20
2V
0
0
2
4
6
8
10
0
4
8
12
16
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
20
1.6
IDS =250µA
Normalized Threshold Vlotage
18
16
ID - Drain Current (A)
VGS=4.5V
40
20
14
12
10
o
Tj=125 C
8
6
o
Tj=-55 C
o
Tj=25 C
4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2
0
VGS=2.5V
0
1
2
3
4
0.0
-50 -25
5
Rev. B.2 - Apr., 2005
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
0
5
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APM2054NV
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.0
IDS = 5A
10
1.8
o
Tj=150 C
IS - Source Current (A)
Normalized On Resistance
2.2
20
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
o
Tj=25 C
0.4
0.2
o
[email protected]=25 C: 35mΩ
0.0
-50 -25
0
25
50
1
0.0
75 100 125 150
0.6
0.8
1.0
1.2
1.4
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
VDS=10V
Frequency=1MHz
9
ID = 5A
500
VGS - Gate-source Voltage (V)
600
C - Capacitance (pF)
0.4
Tj - Junction Temperature (°C)
700
Ciss
400
300
200
Coss
100
0
0.2
Crss
8
7
6
5
4
3
2
1
0
0
4
8
12
16
20
Rev. B.2 - Apr., 2005
4
8
12
16
20
24
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
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APM2054NV
Packaging Information
SOT-89 (Reference EIAJ ED-7500A Registration SC-62)
D
D1
α
E
H
1
2
3
L
C
B1
B
e
e1
A
α
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
A
1.40
1.60
0.055
0.063
B
0.40
0.56
0.016
0.022
B1
0.35
0.48
0.014
0.019
C
0.35
0.44
0.014
0.017
D
4.40
4.60
0.173
0.181
D1
1.35
1.83
0.053
0.072
e
1.50 BSC
0.059 BSC
e1
3.00 BSC
0.118 BSC
E
2.29
2.60
0.090
0.102
H
3.75
4.25
0.148
0.167
L
0.80
1.20
0.031
0.047
α
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
10°
7
10°
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APM2054NV
Packaging Information
SOT-223 (Reference JEDEC Registration SOT-223)
3.3
[0.132]
D
B
1
1.5
[0.06]
6.3
[0.252]
A
α
c
H
E
L
1.5
TYP
[0.06]
K
A
1
e
1 TYP
[0.04]
e
1
2.3
[0.092]
β
LAND PATTERN
RECOMMENDATION
B
CONTROLLING DIMENSION
IS MILLIMETERS VALUES IN
[ ] ARE INCH
Dim
Millimeters
Inches
Min.
Max.
Min.
A
1.50
1.80
A
1.50
A1
0.02
0.08
A1
0.02
B
0.60
0.80
B
0.60
B1
2.90
3.10
B1
2.90
c
0.28
0.32
c
0.28
D
6.30
6.70
D
6.30
e
2.3 BSC
0.09 BSC
e1
4.6 BSC
0.18 BSC
H
6.70
7.30
H
6.70
L
0.91
1.10
L
0.91
K
1.50
2.00
K
1.50
α
0°
10°
α
0°
β
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
13°
13°
8
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APM2054NV
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
9
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APM2054NV
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
Package Thickness
Volume mm 3
Volume mm 3
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm 3
Volume mm 3
Volume mm 3
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
D1
10
Ko
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APM2054NV
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
1.5± 0.25 4.0 ± 0.1
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
11
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