APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS(ON)= 35mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 4.5V RDS(ON)= 110mΩ (typ.) @ VGS= 2.5V • • • Super High Dense Cell Design Top View of SOT-223 Reliable and Rugged Lead Free Available (RoHS Compliant) (2) D Applications • • (1) G Switching Regulators Switching Converters S (3) N-Channel MOSFET Ordering and Marking Information Package Code V : SOT-223 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2054N Lead Free Code Handling Code Temp. Range Package Code APM2054N V : APM2054N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1 www.anpec.com.tw APM2054NV Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 I D* Continuous Drain Current IDM * Pulsed Drain Current Diode Continuous Forward Current TJ Maximum Junction Temperature A 20 A 3 150 T STG Storage Temperature Range P D* Power Dissipation for Single Operation RθJA* V 5 V GS=10V I S* Unit °C -55 to 150 T A=25°C 1.47 T A=100°C 0.58 Thermal Resistance-Junction to Ambient W °C/W 85 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Test Condition APM2054NV Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current V GS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=250µA 1 T J=85°C VDS=VGS, I DS=250µA Gate Leakage Current VGS=±16V, VDS=0V Diode Forward Voltage V VDS=16V, V GS=0V Gate Threshold Voltage Drain-Source On-state Resistance 20 30 0.6 0.9 µA 1.5 V ±100 nA VGS=10V, IDS=5A 35 40 VGS=4.5V, I DS=3.5A 45 54 VGS=2.5V, I DS=2.5A 110 130 ISD =3A, V GS=0V 0.85 1.3 11 13 mΩ V Gate Charge Characteristics b Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 VDS=10V, V GS=4.5V, IDS=6A 3.8 nC 5.2 2 www.anpec.com.tw APM2054NV Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition APM2054NV Min. Typ. Max. 7 10 15 25 19 26 6 7 Unit Dynamic Characteristics b td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Notes: VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=20V, Frequency=1.0MHz ns Ω 2.5 450 100 pF 60 a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 3 www.anpec.com.tw APM2054NV Typical Characteristics Drain Current Power Dissipation 6 1.6 1.4 5 ID - Drain Current (A) Ptot - Power (W) 1.2 1.0 0.8 0.6 0.4 4 3 2 1 0.2 o o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance it im )L n s(o Rd Normalized Transient Thermal Resistance ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 10 TA=25 C,VG=10V 300µs 1ms 1 10ms 100ms 1s 0.1 DC o T =25 C 0.01 A 0.1 1 10 60 Rev. B.2 - Apr., 2005 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RθJA :85 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 2 4 www.anpec.com.tw APM2054NV Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 20 160 VGS= 4, 5, 6, 7, 8, 9, 10V 18 RDS(ON) - On - Resistance (mΩ) 140 ID - Drain Current (A) 16 14 12 3V 10 8 6 4 2 0 120 100 80 60 VGS=10V 20 2V 0 0 2 4 6 8 10 0 4 8 12 16 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 20 1.6 IDS =250µA Normalized Threshold Vlotage 18 16 ID - Drain Current (A) VGS=4.5V 40 20 14 12 10 o Tj=125 C 8 6 o Tj=-55 C o Tj=25 C 4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2 0 VGS=2.5V 0 1 2 3 4 0.0 -50 -25 5 Rev. B.2 - Apr., 2005 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. 0 5 www.anpec.com.tw APM2054NV Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.4 2.0 IDS = 5A 10 1.8 o Tj=150 C IS - Source Current (A) Normalized On Resistance 2.2 20 VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 o Tj=25 C 0.4 0.2 o RON@Tj=25 C: 35mΩ 0.0 -50 -25 0 25 50 1 0.0 75 100 125 150 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 VDS=10V Frequency=1MHz 9 ID = 5A 500 VGS - Gate-source Voltage (V) 600 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 700 Ciss 400 300 200 Coss 100 0 0.2 Crss 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 Rev. B.2 - Apr., 2005 4 8 12 16 20 24 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 0 6 www.anpec.com.tw APM2054NV Packaging Information SOT-89 (Reference EIAJ ED-7500A Registration SC-62) D D1 α E H 1 2 3 L C B1 B e e1 A α Dim Millimeters Inches Min. Max. Min. Max. A 1.40 1.60 0.055 0.063 B 0.40 0.56 0.016 0.022 B1 0.35 0.48 0.014 0.019 C 0.35 0.44 0.014 0.017 D 4.40 4.60 0.173 0.181 D1 1.35 1.83 0.053 0.072 e 1.50 BSC 0.059 BSC e1 3.00 BSC 0.118 BSC E 2.29 2.60 0.090 0.102 H 3.75 4.25 0.148 0.167 L 0.80 1.20 0.031 0.047 α Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 10° 7 10° www.anpec.com.tw APM2054NV Packaging Information SOT-223 (Reference JEDEC Registration SOT-223) 3.3 [0.132] D B 1 1.5 [0.06] 6.3 [0.252] A α c H E L 1.5 TYP [0.06] K A 1 e 1 TYP [0.04] e 1 2.3 [0.092] β LAND PATTERN RECOMMENDATION B CONTROLLING DIMENSION IS MILLIMETERS VALUES IN [ ] ARE INCH Dim Millimeters Inches Min. Max. Min. A 1.50 1.80 A 1.50 A1 0.02 0.08 A1 0.02 B 0.60 0.80 B 0.60 B1 2.90 3.10 B1 2.90 c 0.28 0.32 c 0.28 D 6.30 6.70 D 6.30 e 2.3 BSC 0.09 BSC e1 4.6 BSC 0.18 BSC H 6.70 7.30 H 6.70 L 0.91 1.10 L 0.91 K 1.50 2.00 K 1.50 α 0° 10° α 0° β Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 13° 13° 8 www.anpec.com.tw APM2054NV Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 9 www.anpec.com.tw APM2054NV Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3 <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures Package Thickness Volume mm 3 Volume mm 3 Volume mm 3 <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 D1 10 Ko www.anpec.com.tw APM2054NV Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 F D D1 Po 7.5 ± 0.1 1.5 +0.1 T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 1.5± 0.25 4.0 ± 0.1 W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 11 www.anpec.com.tw