ANPEC APM2103SG

APM2103SG
Dual P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-20V/-2.5A
RDS(ON)= 88mΩ(typ.) @ VGS= -4.5V
RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V
RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V
•
•
Super High Dense Cell Design
Reliable and Rugged
P Channel MOSFET
(5.6)D2
(7.8)D1
Applications
•
Power Management in Notebook Computer,
(4)G2
(2)G1
Portable Equipment and Battery Powered
Systems.
(1)S1
(3)S2
P Channel MOSFET
Ordering and Marking Information
Package Code
SG : JSC70-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2103
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2103 :
XXXXX - Date Code
M2103
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
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APM2103SG
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±12
ID
*
IDM
IS
Continuous Drain Current
*
TJ
TSTG
PD
*
RθJA
b
A
Diode Continuous Forward Current
-1.3
A
Maximum Junction Temperature
150
-10
Storage Temperature Range
°C
-55 to 150
Maximum Power Dissipation
*
V
-2.5
VGS=-4.5V
300µs Pulsed Drain Current
*
Unit
TA =25°C
1.14
TA =100°C
0.45
Thermal Resistance-Junction to Ambient
W
°C/W
110
Notes: *Surface Mounted on 1in pad area, t ≤ 5sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C Unless Otherwise Noted)
Test Condition
APM2103SG
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
VGS=0V, IDS=250µA
RDS(ON)
VSD
a
V
VDS=-16V, VGS=0V
-1
T J=85°C
Gate Threshold Voltage
VDS= VGS, IDS=-250µA
Gate Leakage Current
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-2.5A
a
-20
-30
-0.5
-0.7
-1
V
±10
µA
88
110
Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A
120
160
VGS=-1.8V, IDS=-1A
160
260
ISD=-1.3A, VGS=0V
-0.8
-1.3
5.8
8
Diode Forward Voltage
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
µA
mΩ
V
b
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
VDS=-10V, VGS=-4.5V,
IDS=-2.5A
2
1.3
1.1
nC
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APM2103SG
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics
(TA = 25°C unless otherwise noted)
Test Condition
APM2103SG
Min.
Typ.
Max.
Unit
b
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, RL=10Ω,
IDS=1A, VGEN=-4.5V,
RG=6Ω
ISD=-2.5A
dlSD/dt =100A/µs
360
pF
80
50
8
15
22
41
29
53
32
59
ns
14
ns
6
nc
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
3
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APM2103SG
Typical Characteristics
Drain Current
Power Dissipation
3.0
1.3
1.2
1.1
2.5
ID - Drain Current (A)
1.0
Ptot - Power (W)
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.3
0.5
0.2
0.1
0.0
o
o
TA=25 C
0
20
40
60
0.0
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
Normalized Effective Transient
50
Rd
s(o
n)
Lim
it
10
ID - Drain Current (A)
TA=25 C,VG=-4.5V
300µs
1ms
1
10ms
100ms
0.1
1s
DC
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
TA=25 C
0.01
0.01
2
Mounted on 1in pad
o
RθJA : 110 C/W
Single Pulse
o
0.1
1
10
0.01
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
4
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APM2103SG
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
240
10
VGS= -3,-4, -5, -6, -7, -8, -9, -10V
220 V = -1.8V
GS
8
200
RDS(ON) - On - Resistance (mΩ)
9
ID - Drain Current (A)
-2.5V
7
6
-2V
5
4
3
-1.5V
2
1
0.5
1.0
1.5
2.0
2.5
VGS= -2.5V
140
120
VGS= -4.5V
100
80
60
20
3.0
0
2
4
6
8
-VDS - Drain-Source Voltage (V)
-ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
10
1.8
180
ID= -2.5A
IDS =-250µA
1.6
Normalized Threshold Voltage
160
RDS(ON) - On - Resistance (mΩ)
160
40
0
0.0
140
120
100
80
60
40
180
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1
2
3
4
5
6
7
8
9
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM2103SG
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
10
VGS = -4.5V
IDS = -2.5A
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
o
Tj=150 C
o
Tj=25 C
1
0.4
o
[email protected]=25 C: 88mΩ
0.2
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.9
1.2
1.5
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.8
5.0
Frequency=1MHz
VDS= -10V
4.5
-VGS - Gate - Source Voltage (V)
450
400
C - Capacitance (nC)
0.6
Tj - Junction Temperature (°C)
500
Ciss
350
300
250
200
150
Coss
100
50 Crss
0
0.3
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
4
8
12
16
20
0
1
2
3
4
5
6
7
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
IDS= -2.5A
6
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APM2103SG
Packaging Information
A1
b
0
L
E
E2
E1
e
c
A
A2
D
01
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
A
-
1.10
-
0.043
A1
0.00
0.10
0.000
0.004
A2
0.70
1.00
0.028
0.039
b
0.15
0.30
0.006
0.012
c
0.10
0.20
0.004
0.008
D
1.80
2.20
0.071
0.087
E
1.80
2.40
0.071
0.094
E1
1.65
1.85
0.065
0.073
E2
2.00
2.40
0.079
0.094
e
0.50 BSC
0.020 BSC
L
0.35
0.55
0.014
0.022
θ
0
8°
0
8°
θ1
4°
10°
4°
10°
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
7
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APM2103SG
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
8
www.anpec.com.tw