ANPEC APM2324AC-TUL

APM2324A
N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
20V/3A ,
RDS(ON)=50mΩ(typ.) @ VGS=4.5V
RDS(ON)=90mΩ(typ.) @ VGS=2.5V
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of SOT-23
D
Applications
•
Power Management in Notebook Computer,
G
Portable Equipment and Battery Powered
Systems
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2324
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2324A :
M24X
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
1
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APM2324A
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±10
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
V
3
VGS=4.5V
TSTG
Unit
A
10
1
A
150
°C
-55 to 150
TA=25°C
0.83
TA=100°C
0.3
Thermal Resistance-Junction to Ambient
W
°C/W
150
Note:
*Surface Mounted on 1in2 pad area, t
≤ 10sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM2324A
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±10V, VDS=0V
VGS(th)
IGSS
RDS(ON) a Drain-Source On-state Resistance
VSDa
Diode Forward Voltage
20
0.5
V
0.7
1
µA
1
V
±100
nA
VGS=4.5V, IDS=3A
50
70
VGS=2.5V, IDS=2A
90
110
ISD=0.5A, VGS=0V
0.7
1.3
5
6.5
mΩ
V
Gate Charge Characteristics b
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
VDS=10V, VGS=4.5V,
IDS=3A
0.7
nC
0.7
2
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APM2324A
Electrical Characteristics (Cont.)
Symbol
Parameter
(T A = 25°C unless otherwise noted)
Test Condition
APM2324A
Min.
Typ.
Max.
Unit
Dynamic Characteristics b
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=10V, IDS=1A,
VGEN=4.5V, RG=6Ω,
RL=10Ω
Turn-off Fall Time
Ω
5
255
pF
70
50
6
15
5
11
12
24
6
15
ns
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
3
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APM2324A
Typical Characteristics
Drain Current
1.0
4.0
0.8
3.2
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
0.6
0.4
0.2
2.4
1.6
0.8
o
o
TA=25 C
0.0
0
20
40
60
0.0
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
30
Rd
s(o
n)
Lim
it
10
ID - Drain Current (A)
TA=25 C, VG=4.5V
300µs
1
1ms
10ms
100ms
0.1
1s
DC
o
T =25 C
0.01 A
0.01
0.1
1
10
Rev. B.3 - Sep., 2005
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
2
Single Pulse
0.01
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
2
1E-3
Mounted on 1in pad
o
RθJA : 150 C/W
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM2324A
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
10
0.14
VGS= 3, 4, 5, 6, 7, 8, 9, 10V
VGS=2.5V
0.12
RDS(ON) - On - Resistance (Ω)
ID - Drain Current (A)
8
6
4
2V
2
0
0
2
4
6
8
0.04
0.02
0
2
4
6
8
Transfer Characteristics
Gate Threshold Voltage
10
1.8
IDS =250µA
1.6
Normalized Threshold Voltage
ID - Drain Current (A)
VGS=4.5V
ID - Drain Current (A)
8
7
6
5
4
o
1
0.06
VDS - Drain-Source Voltage (V)
9
2
0.08
0.00
10
10
3
0.10
Tj=125 C
o
o
Tj=25 C
Tj=-55 C
1.0
0.8
0.6
0.2
-50 -25
VGS - Gate - Source Voltage (V)
Rev. B.3 - Sep., 2005
1.2
0.4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Copyright  ANPEC Electronics Corp.
1.4
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM2324A
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
10
VGS = 4.5V
IDS = 3A
o
Tj=150 C
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
o
Tj=25 C
1
0.4
o
[email protected]=25 C: 50mΩ
0.2
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.4
0.8
1.2
1.6
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
5
500
Frequency=1MHz
VDS=10 V
VGS - Gate - source Voltage (V)
IDS = 3 A
C - Capacitance (pF)
400
300
Ciss
200
100
Coss
Crss
0
0
4
8
12
16
Rev. B.3 - Sep., 2005
3
2
1
0
20
0
1
2
3
4
5
6
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
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6
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APM2324A
Packaging Information
SOT-23
D
B
3
E
H
2
1
e
A
L
A1
Dim
A
A1
B
C
D
E
e
H
L
Millimeters
Min.
1.00
0.00
0.35
0.10
2.70
1.40
Inches
Max.
1.30
0.10
0.51
0.25
3.10
1.80
Min.
0.039
0.000
0.014
0.004
0.106
0.055
Max.
0.051
0.004
0.020
0.010
0.122
0.071
0.075/0.083 BSC.
0.094
0.118
0.015
1.90/2.1 BSC.
2.40
0.37
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
C
3.00
7
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APM2324A
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
8
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APM2324A
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
Package Thickness
Volume mm 3
Volume mm 3
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm 3
Volume mm 3
Volume mm 3
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
D1
9
Ko
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APM2324A
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
Application
SOT-23
A
B
C
J
178±1
60 ± 1.0
12.0
F
D
D1
Po
3.5 ± 0.05
1.5 +0.1
φ0.1MIN
4.0
T1
P
E
1.4
W
8.0+ 0.3
- 0.3
4.0
1.75
P1
Ao
Bo
Ko
t
2.0 ± 0.05
3.1
3.0
1.3
0.2±0.03
2.5 ± 0.15 9.0 ± 0.5
T2
(mm)
Cover Tape Dimensions
Application
SOT- 23
Carrier Width
8
Cover Tape Width
5.3
Devices Per Reel
3000
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
10
www.anpec.com.tw