ANPEC APM2504NUC-TU

APM2504NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
25V/75A ,
RDS(ON)=3.6mΩ(typ.) @ VGS=10V
RDS(ON)=5.4mΩ(typ.) @ VGS=4.5V
•
•
•
G
Super High Dense Cell Design
D
S
Reliable and Rugged
Top View of TO-252
Lead Free Available (RoHS Compliant)
D
Applications
•
Power Management in Desktop Computer or
G
DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
P ackage C ode
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 °C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
L e a d F re e C o d e
L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e
A PM 2504N
L e a d F re e C o d e
H a n d lin g C o d e
T em p. R ange
P ackage C ode
A PM 2504N U :
A PM 2504N
XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
1
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APM2504NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA = 25°C)
VDSS
Drain-Source Voltage
25
VGSS
Gate-Source Voltage
±20
IS
Diode Continuous Forward Current
20
A
TJ
Maximum Junction Temperature
150
°C
-55 to 150
°C
TSTG
Storage Temperature Range
V
Mounted on Large Heat Sink
IDP
300ìs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
TC=25°C
180
TC=100°C
100
TC=25°C
75
TC=100°C
50
TC=25°C
50
TC=100°C
20
*
2.5
Thermal Resistance-Junction to Case
A
A
W
°C/W
2
Mounted on PCB of 1in Pad Area
IDP
300ìs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
RθJA
Maximum Power Dissipation
TA=25°C
180
TA=100°C
100
TA=25°C
19
TA=100°C
12
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
ID
PD
RθJA
300ìs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
TA=25°C
180
TA=100°C
100
TA=25°C
15
TA=100°C
9
TA=25°C
1.6
°C/W
TA=100°C
0.6
°C/W
75
°C/W
A
A
Note:
* Current limited by bond wire.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
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APM2504NU
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche Energy
ID=35A, VDD=15V
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA
IDSS
VGS(th)
IGSS
RDS(ON)
a
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
Diode Characteristics
a
VSD
Diode Forward Voltage
APM2504NU
Min.
Typ.
Max.
100
25
1.3
Unit
mJ
V
1.8
1
µA
2.5
V
±100
nA
VGS=10V, IDS=40A
3.6
4.5
VGS=4.5V, IDS=20A
5.4
7
ISD=20A, VGS=0V
0.8
1.3
mΩ
V
b
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Total Gate Charge
1
Ω
4350
pF
920
pF
670
pF
18
34
ns
21
39
ns
85
130
ns
25
40
ns
38.5
50
nC
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=20A
13.6
nC
17.2
nC
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
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APM2504NU
Typical Characteristics
Drain Current
Power Dissipation
60
90
80
50
ID - Drain Current (A)
Ptot - Power (W)
70
40
30
20
60
50
40
30
20
10
10
o
0
o
TC=25 C
0
20 40
0
60 80 100 120 140 160 180
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
it
im
)L
n
o
s(
Rd
Normalized Transient Thermal Resistance
ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
300
100
TC=25 C,VG=10V
1ms
10ms
100ms
10
1s
DC
1
o
T =25 C
0.1 C
0.1
1
10
70
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
Mounted on 1in pad
o
RθJA :50 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
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APM2504NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
180
10
VGS= 6,7,8,9,10V
5V
9
RDS(ON) - On - Resistance (mΩ)
160
ID - Drain Current (A)
140
4.5V
120
100
80
4V
60
40
3.5V
7
6
5
3
2
1
3V
0.4
0.8
1.2
1.6
0
2.0
30
60
90
120
150
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
180
1.6
IDS =250µA
Normalized Threshold Vlotage
160
140
ID - Drain Current (A)
0
VDS - Drain - Source Voltage (V)
180
o
Tj=125 C
120
100
o
Tj=25 C
80
o
60
Tj=-55 C
40
1.4
1.2
1.0
0.8
0.6
0.4
20
0
VGS=10V
4
20
0
0.0
VGS=4.5V
8
0
1
2
3
4
5
6
0.2
-50 -25
7
25
50
75
100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
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APM2504NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
200
VGS = 10V
IDS = 40A
100
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=150 C
o
Tj=25 C
10
0.6
o
[email protected]=25 C: 3.6mΩ
0.4
-50 -25
0
25
50
1
0.0
75 100 125 150
0.9
1.2
1.5
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
Frequency=1MHz
VDS=10V
ID =20A
VGS - Gate-source Voltage (V)
7000
6000
C - Capacitance (pF)
0.6
Tj - Junction Temperature (°C)
8000
5000
Ciss
4000
3000
2000
Coss
1000
0
0.3
8
6
4
2
Crss
0
5
10
15
20
0
25
15
30
45
60
75
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
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APM2504NU
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
0. 0 20
7
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APM2504NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
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APM2504NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
D1
9
Ko
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APM2504NU
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
1.5± 0.25 4.0 ± 0.1
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May., 2005
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